AGILENT MSA-0436

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0435, -0436
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 3.8 GHz
• 12.5 dBm Typical P1 dB at
1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0435 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0436.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9575E
OUT
MSA
Vd = 5.25 V
6-330
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
MSA-0435, -0436 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,5]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 109°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of qjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω
Units
Min.
7.5
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
∆GP
Gain Flatness
f = 0.1 to 2.5 GHz
dB
f3 dB
3 dB Bandwidth
VSWR
GHz
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
50 Ω Noise Figure
f = 1.0 GHz
Max.
8.5
9.5
± 0.6
± 1.0
3.8
f = 0.1 to 2.5 GHz
NF
Typ.
1.4:1
1.9:1
dB
6.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
12.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
25.5
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
125
4.75
5.25
5.75
–8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0435
MSA-0436-BLK
MSA-0436-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-331
MSA-0435, -0436 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.08
.07
.07
.05
.05
.04
.09
.14
.22
.28
.34
.37
.42
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
175
172
171
166
169
175
–142
–145
–154
–175
170
156
140
120
8.5
8.5
8.5
8.5
8.4
8.3
8.1
7.8
7.3
6.6
5.8
4.8
3.9
3.0
2.67
2.68
2.67
2.66
2.64
2.61
2.55
2.46
2.33
2.14
1.94
1.74
1.57
1.41
175
170
161
151
142
136
109
87
71
50
32
15
–1
–16
–16.4
–16.3
–16.4
–16.2
–16.1
–16.0
–15.0
–14.2
–13.1
–12.5
–11.7
–11.3
–10.7
–10.4
.151
.153
.151
.155
.156
.159
.178
.196
.221
.238
.260
.271
.291
.302
1
2
3
6
8
10
13
15
18
14
9
4
–2
–8
.20
.20
.20
.21
.22
.24
.26
.28
.31
.33
.35
.34
.33
.32
–10
–16
–33
–45
–57
–68
–96
–123
–140
–160
–173
–179
–171
–160
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
80
12
9
TC = +125°C
TC = +25°C
TC = –55°C
10
60
8
6
G p (dB)
Gain Flat to DC
I d (mA)
G p (dB)
8
40
7
6
4
20
0.1
0.3 0.5
1.0
3.0
4
0
6.0
1
2
3
FREQUENCY (GHz)
20
7
12
P1 dB
9
8
7
NF
+25
60
70
7.5
6
+85
7.0
15
12
I d = 50 mA
6.5
9
NF (dB)
GP
7
–25
50
Figure 3. Power Gain vs. Current.
I d = 70 mA
10
6
40
18
11
8
30
I d (mA)
21
P1 dB (dBm)
P1 dB (dBm)
6
Figure 2. Device Current vs. Voltage.
13
G p (dB)
5
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.
5
–55
4
NF (dB)
0
0.1 GHz
1.0 GHz
2.0 GHz
5
2
5
+125
6
3
0.1
6.0
I d = 30 mA
I d = 30 mA
I d = 50 mA
I d = 70 mA
5.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE, (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=50mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-332
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A04
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-333