NSC LM4668LD

LM4668
10W High-Efficiency Mono BTL Audio Power Amplifier
General Description
Key Specifications
The LM4668 is a high efficiency switching audio power
amplifier primarily designed for demanding applications in
flat panel monitors and TV’s. It is capable of delivering 6W to
an 8Ω mono BTL load with less than 1% distortion (THD+N)
from a 12VDC power supply.
Boomer audio power amplifiers were designed specifically to
provide high quality output power with a minimal amount of
external components. The LM4668 features a micro-power,
active-low shutdown mode, an internal thermal shutdown
protection mechanism, and short circuit protection.
The LM4668 contains advanced transient (“pop and click”)
suppression circuitry that eliminates noises that would otherwise occur during turn-on and turn-off transitions.
j Power Output BTL (VDD = 14V,
fIN = 1kHz, THD+N = 10%, RL = 8Ω)
j Quiescent Power Supply Current
10W (typ)
30mA (typ)
j Efficiency (VDD = 12V, fIN = 1kHz,
RL = 8Ω, POUT = 6W)
j Shutdown Current
79% (typ)
0.15mA (typ)
j Fixed Gain
30dB (typ)
Features
n Soft-start circuitry eliminates noise during turn-on
transition
n Low current shutdown mode
n Low quiescent current
n 6W BTL output, RL = 8Ω
n Short circuit protection
n Fixed, internally set gain of 30dB
Applications
n Flat Panel Monitors
n Flat Panel TVs
n Computer Sound Cards
Connection Diagrams
LD Package
MH Package
20089102
Top View
Order Number LM4668LD
See NS Package Number LDC14A
200891G3
Top View
Order Number LM4668MH
See NS Package Number MXA20A
Boomer ® is a registered trademark of National Semiconductor Corporation.
© 2004 National Semiconductor Corporation
DS200891
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LM4668 10W High-Efficiency Mono BTL Audio Power Amplifier
October 2004
LM4668
Typical Application
20089101
FIGURE 1. Typical Audio Amplifier Application Circuit (* Zetex ZHCS506)
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2
Junction Temperature (LD and MH)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Thermal Resistance
Supply Voltage
150˚C
θJC
2˚C/W
θJA
40˚C/W
16V
Storage Temperature
−65˚C to +150˚C
Operating Ratings
−0.3V to VDD +0.3V
Input Voltage
Power Dissipation (Note 3)
Internally limited
ESD Susceptibility (Note 4)
2000V
ESD Susceptibility (Note 5)
Temperature Range
TMIN ≤ TA ≤ TMAX
−40˚C ≤ TA ≤ 85˚C
9V ≤ VDD ≤ 14.0V
Supply Voltage (Note 10)
200V
Electrical Characteristics for the LM4668
(Note 1)
The following specifications apply for the circuit shown in Figure 1 operating with VDD = 12V, RL = 8Ω, and fIN = 1kHz,
unless otherwise specified. Limits apply for TA = 25˚C.
Symbol
Parameter
Conditions
LM4668
Typical
Limit
(Note 6)
(Notes 7,
8)
65
Units
(Limits)
IDD
Quiescent Power Supply Current
VIN = 0V, IO = 0A, RL = 8Ω
30
ISD
Shutdown Current
VSHUTDOWN = GND (Note 9)
0.15
AV
Amplifier Gain
BTL output voltage with respect to input
voltage, VIN = 100mVp-p
30
32
28
dB (max)
dB (min)
PO
Output Power
THD+N = 1% (max)
THD+N = 10%, VDD = 14V
6
10
5
W (min)
W
THD+N
Total Harmonic Distortion + Noise POUT = 1WRMS
fBW
Frequency Response Bandwith
POUT = 6W, post filter,
-3dB relative to the output amplitude
at 1kHz, See Figure 1
mA (max)
mA
0.2
%
20
20000
Hz
Hz
η
Efficiency
POUT = 6W, including output filter
79
%
éN
Output Noise
A-Weighted Filter, VIN = 0V
220
µV
SNR
Signal-to-Noise Ratio
A-Weighted Filter, POUT = 6W
AV = 30dB
90
dB
PSRR
Power Supply Rejection Ratio
VRIPPLE = 20mVp-p, CBYPASS_1 = 10µF,
input referred
f = 50Hz
f = 60Hz
f = 100Hz
f = 120Hz
f = 1kHz
79
82
85
84
75
CBYPASS = 10µF
600
ms
170
˚C (min)
˚C (max)
dB
tWU
Wake-Up time
TSD
Thermal Shutdown Temperature
VSDIH
Shutdown Voltage Input High
4
V (min)
VSDIL
Shutdown Voltage Input Low
1.5
V (max)
Note 1: All voltages are measured with respect to the GND pin unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be de-rated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum
allowable power dissipation is PDMAX = (TJMAX − TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4668 typical application
(shown in Figure 1) with VDD = 12V, RL = 8Ω stereo operation, the total power dissipation is 900mW. θJA = 40˚C/W
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine model, 220pF – 240pF discharged through all pins.
Note 6: Typicals are measured at 25˚C and represent the parametric norm.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
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LM4668
Absolute Maximum Ratings (Notes 1, 2)
LM4668
Electrical Characteristics for the LM4668
(Note 1) (Continued)
Note 8: Datasheets min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: Shutdown current is measured in a normal room environment. The SHUTDOWN pin should be driven as close as possible to GND for minimum shutdown
current.
Note 10: Please refer to “Under Voltage Protection” on page 8 under “General Features.”
Typical Performance Characteristics
THD+N vs Frequency
VDD = 12V, RL = 8Ω, PO = 1W
THD+N vs Frequency
VDD = 9V, RL = 8Ω, PO = 1W
20089106
20089107
THD+N vs Output Power
RL = 8Ω, VDD = 9V, f = 1kHz
THD+N vs Frequency
VDD = 14V, RL = 8Ω, PO = 1W
20089108
20089109
THD+N vs Output Power
RL = 8Ω, VDD = 14V, f = 1kHz
THD+N vs Output Power
RL = 8Ω, VDD = 12V, f = 1kHz
20089111
20089110
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LM4668
Typical Performance Characteristics
(Continued)
Amplifier Output Magnitude
vs Frequency
RL = 8Ω, VDD = 12V
Amplifier Output Power
vs Power Supply Voltage
RL = 8Ω, f = 1kHz
20089112
20089113
Power Rejection Ratio vs Frequency
VDD = 12V, RL = 8Ω, Input Referred
Power Rejection Ratio vs Frequency
VDD = 9V, RL = 8Ω, Input Referred
20089114
20089115
Amplifier Power Dissipation
vs Amplifier Load Dissipation
VDD = 14V, RL = 8Ω, f = 1kHz
Power Rejection Ratio vs Frequency
VDD = 14V, RL = 8Ω, Input Referred
20089117
20089116
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LM4668
Typical Performance Characteristics
(Continued)
Amplifier Power Dissipation
vs Total Load Power Dissipation
VDD = 9V, RL = 8Ω, f = 1kHz
Amplifier Power Dissipation
vs Load Power Dissipation
VDD = 12V, RL = 8Ω, f = 1kHz
20089119
20089118
Output Power
vs Load Resistance
VDD = 12V, f = 1kHz
Output Power
vs Load Resistance
VDD = 14V, f = 1kHz
20089121
20089120
Power Supply Current
vs Power Supply Voltage
VIN = 0V, RL = 8Ω
Output Power
vs Load Resistance
VDD = 9V, f = 1kHz
20089122
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20089123
6
LM4668
Typical Performance Characteristics
(Continued)
Power Dissipation
vs Ambient Temperature
20089124
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LM4668
Output Stage Fault Detection And Protection
The output stage MOSFETs are protected against output
conditions that could otherwise compromise their operational
status. An onboard fault detection circuit continuously monitors the signal on each output MOSFET’s gate and compares it against the respective drain voltage. When a condition is detected that violates a MOSFET’s Safe Operating
Area (SOA), the drive signal is disconnected from the output
MOSFETs’ gates. The fault detect circuit maintains this protective condition for approximately 600ms, at which time the
drive signal is reconnected. If the fault condition is no longer
present, normal operation resumes.
General Features
SYSTEM FUNCTIONAL INFORMATION
Modulation Technique
Unlike typical Class D amplifiers that use single-ended comparators to generate a pulse-width modulated switching
waveform and RC timing circuits to set the switching frequency, the LM4668 uses a balanced differential floating
modulator. Oscillation is a result of injecting complimentary
currents onto the respective plates of a floating, on-die capacitor. The value of the floating capacitor and value of the
components in the modulator’s feedback network and sets
the nominal switching frequency at 450kHz. Modulation results from imbalances in the injected currents. The amount
of current imbalance is directly proportional to the applied
input signal’s magnitude and frequency.
Using a balanced, floating modulator produces a Class D
amplifier that is immune to common mode noise sources
such as substrate noise. This noise occurs because of the
high frequency, high current switching in the amplifier’s output stage. The LM4668 is immune to this type of noise
because the modulator, the components that set its switching frequency, and even the load all float with respect to
ground.
The balanced modulator’s pulse width modulated output
drives the gates of the LM4668’s H-bridge configured output
power MOSFETs. The pulse-train present at the power
MOSFETs’ output is applied to an LC low pass filter that
removes the 450kHz energy component. The filter’s output
signal, which is applied to the driven load, is an amplified
replica of the audio input signal.
If the fault condition remains, however, the drive signal is
again disconnected.
Thermal Protection
The LM4668 has thermal shutdown circuitry that monitors
the die temperature. Once the LM4668 die temperature
reaches 170˚C, the LM4668 disables the output switching
waveform and remains disabled until the die temperature
falls below 140˚C (typ).
Over-Modulation Protection
The LM4668’s over-modulation protection is a result of the
preamplifier’s (AMP1 and AMP2, Figure 1) inability to produce signal magnitudes that equal the power supply voltages. Since the preamplifier’s output magnitude will always
be less than the supply voltage, the duty cycle of the amplifier’s switching output will never reach zero. Peak modulation is limited to a nominal 95%.
Application Hints
Shutdown Function
The LM4668’s active-low shutdown function allows the user
to place the amplifier in a shutdown mode while the system
power supply remains active. Activating shutdown deactivates the output switching waveform and minimizes the
quiescent current. Applying logic 0 (GND) to pin 8 enables
the shutdown function. Applying logic 1 (4V ≤ VLOGIC ≤ VDD)
to pin 8 disables the shutdown function and restores full
amplifier operation.
SUPPLY BYPASSING
Correct power supply bypassing has two important goals.
The first is to reduce noise on the power supply lines and
minimize deleterious effects that the noise may cause to the
amplifier’s operation. The second is to help stabilize an
unregulated power supply and to improve the supply’s transient response under heavy current demands. These two
goals require different capacitor value ranges. Therefore,
various types and values are recommended for supply bypassing. For noise de-coupling, generally small ceramic capacitors (0.01µF to 0.1µF) are recommended. Larger value
(1µF to 10µF) tantalum capacitors are needed for the transient current demands. These two capacitors in parallel will
do an adequate job of removing most noise from the supply
rails and providing the necessary transient current. These
capacitors should be placed as close as possible to each
IC’s supply pin(s) using leads as short as possible.
The LM4668 has two VDD pins: a power VDD (PVDD) and a
signal VDD (SVDD). The parallel combination of the low value
ceramic (0.1µF) and high value tantalum (10µF) should be
used to bypass the PVDD pin. A small value (0.1µF) ceramic
or tantalum can be used to bypass the SVDD pin.
Under Voltage Protection
The under voltage protection disables the output driver section of the LM4668 while the supply voltage is below 8V. This
condition may occur as power is first applied or during low
line conditions, changes in load resistance, or when power
supply sag occurs. The under voltage protection ensures
that all of the LM4668’s power MOSFETs are off. This action
eliminates shoot-through current and minimizes output transients during turn-on and turn-off. The under voltage protection gives the digital logic time to stabilize into known states,
further minimizing turn output transients.
Turn-On Time
The LM4668 has an internal timer that determines the amplifier’s turn-on time. After power is first applied or the part
returns from shutdown, the nominal turn-on time is 600ms.
This delay allows all externally applied capacitors to charge
to a final value of VDD/2. Further, during turn-on, the outputs
are muted. This minimizes output transients that may occur
while the part settles into is quiescent operating mode.
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AMPLIFIER OUTPUT FILTERING
The LM4668 requires a lowpass filter connected between
the amplifier’s bridge output and the load. The second-order
LC output filter shown in Figure 1 creates the lowpass response that is necessary to attenuate signal energy at the
amplifier’s switching frequency. It also serves to suppress
EMI. Together, the output filter’s 0.27µF capacitors and the
recommended minimum inductor value of 27µH produce a
8
THD+N MEASUREMENTS AND OUT OF AUDIO BAND
NOISE
(Continued)
nominal cutoff frequency of 47kHz. This cutoff frequency
ensures that the attenuation is much less than 3dB at 20kHz.
THD+N (Total Harmonic Distortion plus Noise) is a very
important parameter by which all audio amplifiers are measured. Often it is shown as a graph where either the output
power or frequency is changed over the operating range. A
very important variable in the measurement of THD+N is the
bandwidth-limiting filter at the input of the test equipment.
Class D amplifiers, by design, switch their output power
devices at a much higher frequency than the accepted audio
range (20Hz - 20kHz). Alternately switching the output voltage between VDD and GND allows the LM4668 to operate at
much higher efficiency than that achieved by traditional
Class AB amplifiers. Switching the outputs at high frequency
also increases the out-of-band noise. Under normal circumstances the output lowpass filter significantly reduces this
out-of-band noise. If the low pass filter is not optimized for a
given switching frequency, there can be significant increase
in out-of-band noise. THD+N measurements can be significantly affected by out-of-band noise, resulting in a higher
than expected THD+N measurement. To achieve a more
accurate measurement of THD, the test equipment’s input
bandwidth of the must be limited. Some common upper filter
points are 22kHz, 30kHz, and 80kHz. The input filter limits
the noise component of the THD+N measurement to a
smaller bandwidth resulting in a more real-world THD+N
value.
The output filter cutoff frequency and topology are also
optimized for operational efficiency. A higher cutoff frequency
compromises efficiency, whereas a lower cutoff frequency
compromises the high frequencies within the audio frequency range. The filter’s topology also minimizes high frequency peaking, which can also decrease the amplifier’s
efficiency.
The output filter inductors must have a current rating that
exceeds the amplifier’s output current when driving the load
to maximum dissipation. Assuming a load dissipation of 10W
in an 8Ω load with the amplifier operating on a 14V supply,
the RMS current is 1.1A. In this case, the inductors’ current
rating should be at least 1.2ARMS or 1.6APEAK.
If a different output filter cutoff frequency (fC) is desired, the
following brief discussion covers the selection of the capacitor and inductor values. In the following equations, RL is the
load resistance and CL is three times the final value of the
three common-mode filter capacitor found between the two
output filter inductors (each inductor is L) as shown in Figure
1. When calculating values for L and CL, RL should be 8Ω,
since the LM4668 is specified for 8Ω loads.
The filter’s two inductors are equal to
L = RL / 2πfC
RECOMMENDED PRINTED CIRCUIT BOARD LAYOUT
Figures 2 through 4 show the recommended two-layer PC
board layout that is optimized for the 14-pin MH-packaged
LM4668 and associated external components. Figures 5
through 7 show the recommended two-layer PC board layout that is optimized for the 14-pin LD-packaged LM4668
and associated external components. These circuits are designed for use with an external 12V supply and 8Ω speakers
(or load resistors). This circuit board is easy to use. Apply
12V and ground to the board’s VDD and GND terminals,
respectively. Connect speakers (or load resistors) between
the board’s -OUT and +OUT terminals. Apply the input signal
to the input pin labeled -IN.
(1)
and each of the three capacitors are equal to
C = L / 1.5R2
(2)
SCHOTTKY DIODE AMPLIFIER OUTPUT OVERDRIVE
PROTECTION
The Schottky diodes shown in Figure 1 provide protection
against an over-voltage condition that may be caused by
inductor-induced transients. These diodes are necessary
when the nominal supply voltage exceeds 12V, the load
impedance falls below 6Ω or the ambient temperature in the
operating environment rises above 50˚C.
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LM4668
Application Hints
LM4668
Demonstration Board Layout
20089103
FIGURE 2. Recommended MH PCB Layout
Top Silkscreen
20089104
FIGURE 3. Recommended MH PCB Layout
Top Layer
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LM4668
Demonstration Board Layout
(Continued)
20089105
FIGURE 4. Recommended MH PCB Layout
Bottom Layer
20089125
FIGURE 5. Recommended LD PCB Layout
Top Silkscreen Layer
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LM4668
Demonstration Board Layout
(Continued)
20089126
FIGURE 6. Recommended LD PCB Layout
Top Layer
20089127
FIGURE 7. Recommended LD PCB Layout
Bottom Layer
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LM4668
Physical Dimensions
inches (millimeters)
unless otherwise noted
LD Package
Order Number LM4668LD
NS Package Number LDC14A
13
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LM4668 10W High-Efficiency Mono BTL Audio Power Amplifier
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
MH Package
Order Number LM4668MH
NS Package Number MXA20A
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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