CD4007M/CD4007C Dual Complementary Pair Plus Inverter General Description Features The CD4007M/CD4007C consists of three complementary pairs of N- and P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to VDD and VSS. For proper operation the voltages at all pins must be constrained to be between VSS b 0.3V and VDD a 0.3V at all times. Y Y Wide supply voltage range High noise immunity 3.0V to 15V 0.45 VCC (typ.) Connection Diagram Dual-In-Line Package TL/F/5943 – 1 Top View Note: All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS. Order Number CD4007 C1995 National Semiconductor Corporation TL/F/5943 RRD-B30M105/Printed in U. S. A. CD4007M/CD4007C Dual Complementary Pair Plus Inverter February 1988 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Voltage at Any Pin Storage Temperature Range Power Dissipation (PD) Dual-In-Line Small Outline Operating VDD Range VSS b0.3V to VDD a 0.3V Operating Temperature Range CD4007M CD4007C b 55§ C to a 125§ C b 40§ C to a 85§ C b 65§ C to a 150§ C 700 mW 500 mW VSS a 3.0V to VSS a 15V Lead Temperature (Soldering, 10 seconds) 260§ C DC Electrical Characteristics CD4007M Limits Symbol Parameter b 55§ C Conditions Min a 25§ C a 125§ C Typ Max Min Typ Max Min Units Typ Max IL Quiescent Device Current VDD e 5.0V VDD e 10V 0.05 0.1 0.001 0.05 0.001 0.1 3.0 6.0 mA mA PD Quiescent Device VDD e 5.0V Dissipation Package VDD e 10V 0.25 1.0 0.005 0.25 0.001 1.0 15 60 mW mW VOL Output Voltage Low Level VDD e 5.0V VDD e 10V 0.05 0.05 0.05 0.05 V V VOH Output Voltage High Level VDD e 5.0V VDD e 10V VNL Noise Immunity (All Inputs) VNH Noise Immunity (All Inputs) VDD e 5.0V, VO e 3.6V VDD e 10V, VO e 7.2V VDD e 50V, VO e 0.95V VDD e 10V, VO e 2.9V IDN Output Drive Current VDD e 5.0V, VO e 0.4V, VI e VDD 0.75 N-Channel VDD e 10V, VO e 0.5V, VI e VDD 1.6 Output Drive Current VDD e 5.0V, VO e 2.5V, VI e VSS b1.75 P-Channel VDD e 10V, VO e 9.5V, VI e VSS b1.35 IDP II 4.95 9.95 0 0 4.95 9.95 1.5 3.0 3.6 7.1 0.05 0.05 5.0 10 2.25 4.5 4.95 9.95 V V 1.5 3.0 1.4 2.9 V V 3.5 7.0 2.25 4.5 3.5 7.0 V V 0.6 1.3 1.0 2.5 0.4 0.95 mA mA b 1.0 b 0.75 mA mA b 1.4 b 4.0 b 1.1 b 2.5 Input Current 10 pA DC Electrical Characteristics CD4007C Limits Symbol Parameter b 40§ C Conditions Min a 25§ C Typ Max Min a 85§ C Typ Max Min Units Typ Max IL Quiescent Device Current VDD e 5.0V VDD e 10V 0.5 1.0 0.005 0.05 0.005 1.0 15 30 mA mA PD Quiescent Device VDD e 5.0V Dissipation Package VDD e 10V 2.5 10 0.025 2.5 0.05 10 75 300 mW mW VOL Output Voltage Low Level VDD e 5.0V VDD e 10V 0.05 0.05 0.05 0.05 V V VOH Output Voltage High Level VDD e 5.0V VDD e 10V VNL Noise Immunity (All inputs) VNH Noise Immunity (All Inputs) VDD e 5.0V, VO e 3.6V VDD e 10V, VO e 7.2V VDD e 5.0V, VO e 0.95V VDD e 10V, VO e 2.9V IDN Output Drive Current VDD e 5.0V, VO e 0.4V, VI e VDD 0.35 N-Channel VDD e 10V, VO e 0.5V, VI e VDD 1.2 Output Drive Current VDD e 5.0V, VO e 2.5V, VI e VSS b1.3 P-Channel VDD e 10V, VO e 9.5V, VI e VSS b0.65 IDP II 4.95 9.95 0 0 4.95 9.95 1.5 3.0 3.6 7.1 Input Current 0.01 0.01 5.0 10 2.25 4.5 4.95 9.95 1.5 3.0 1.4 2.9 V V 3.5 7.0 2.25 4.5 3.5 7.0 V V 0.3 1.0 1.0 2.5 0.24 0.8 mA mA b 0.9 b 0.45 mA mA b 1.1 b 4.0 b 0.55 b 2.5 10 Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage. 2 V V pA AC Electrical Characteristics* CD4007M TA e 25§ C and CL e 15 pF and rise and fall times e 20 ns. Typical temperature coefficient for all values of VDD e 0.3%/§ C Symbol Parameter Conditions Typ Max Units tPLH e tPHL Propagation Delay Time VDD e 5.0V VDD e 10V Min 35 20 60 40 ns ns tTLH e tTHL Transition Time VDD e 5.0V VDD e 10V 50 30 75 40 ns ns CI Input Capacitance Any Input 5.0 pF *AC Parameters may be generated by DC correlated testing. AC Electrical Characteristics* CD4007C TA e 25§ C and CL e 15 pF and rise and fall times e 20 ns. Typical temperature coefficient for all values of VDD e 0.3%/§ C Symbol Parameter Conditions Typ Max Units tPLH e tPHL Propagation Delay Time VDD e 5.0V VDD e 10V Min 35 20 75 50 ns ns tTLH e tTHL Transition Time VDD e 5.0V VDD e 10V 50 30 100 50 ns ns CI Input Capacitance Any Input 5 pF *AC Parameters are guaranteed by DC correlated testing. AC Test Circuits TL/F/5943–2 TL/F/5943 – 3 TL/F/5943 – 4 Switching Time Waveforms TL/F/5943 – 5 3 CD4007M/CD4007C Dual Complementary Pair Plus Inverter Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4007MJ or CD4007CJ NS Package Number J14A Molded Dual-In-Line Package (N) Order Number CD4007MN or CD4007CN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 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