an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios Absolute Maximum Ratings at 25°C Symbol Parameter Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VES0 4.0 V Collector Current (Peak) ‘c 2 A Power Dissipation P* 63 W 1 JunctionTemperature 1 T, \ 200 I “C I Storage Temperature Ts-r0 -4oto+125 “C Thermal Resistance eJC 2.1 “Cl-W UNLfSS 37HERWISE NOT3 TOLERANXS ARE INCHES (F(ILLI~ETERS S.OOS =,13Hr) Electrical Characteristics at 25°C Symbol Min Max Units Collector-Emitter Breakdown Voltage BV,,, 65 - V I,=5 mA, V,,=O.O V Base-Emitter Breakdown Voltage BVEoO 4.0 V 1,=2.5 mA, I,=O.OA Parameter Collector-Emitter Leakaoe Current IA-c DC Forward Current Gain hFE Input Power PIN Power Gain GP _ Coilector Efficiency Input Return Loss Load Mismatch Tolerance lest Conditions 1 mA Bo - 2.0 w V,,=27 V, I,,=10 mA, PO,=16 W, F=400 MHz 9.0 - dB V,,=27 V, I,,=1 0 mA, POUT=1 6 W, F=400 MHz 40 - % V,,=27 V, I,,=1 0 mA, P,,$6 W, F=400 MHz RL 9 - dB V,,=27 V, I,=1 0 mA, Poti W, F=400 MHz VSWR-T - 3:l - V,,=27 V, I,,=10 mA, P,&6 W, F=400 MHz 20 ’ - ?C ’ v-,=30 v V,,=5.0 V. I,=500 mA Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 9-85 Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020