I .--em _-- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute‘tiaximum Ratinas at 25°C I Parameter / Symbol ( 1 Collector-BaseVoltage ( V,,, Rating 1 56 1 Units 1 I I v Collector-Emitter Voltage VEs 56 V Emitter-Base Voltage VEBO 3.0 v Collector Current (Peak) ‘c 5.6 A Total Power Dissipation PTO: 175 W junction Temperature TJ 200 “C Storage Temperature T ST0 -55 to +200 “C Thermal Resistance 8JC 1.0 “Cl-W Electrical Characteristics .060’.002 (1521.05) UNLESS CT-IERVISE NOTED. TCLERANCES ARE f :NCH~:S ZOO5 :M!, LIHETERS T,13MM, - at 25°C ( Symbol I Parameter it Collector-Emitter Breakdown Voltage 1 Min BV,,, Collector-Emitter Leakage Current Test Conditions 1 Max 1 Units 1 56 ICES - V I,=50 mA 5.0 mA v,,=2a v Collector-Base Breakdown Voltage BV,,, 56 - V I,=50 mA Emitter-Base Breakdown Voltage BvEBO 3.0 - V I,=1 0 mA DC Forward Current Gain hFE 15 100 - V,,=5.0 V, 1,=0.5 A Input Power P,N 5.5 8.8 w V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz ‘c - 3.75 A V,,=28 V, I& CollectorCurrent Input Return Loss 2 mA, PO,?42 W, F=l450 MHz RL Saturated Output Power PST Load Mismatch Tolerance VSWR-T - Load Mismatch Tolerance VSWR-T - Typical Optimum Device Impedances F(MHz) z,(n) 850 950 1050 1150 1250 1350 1450 Specifications Subject 2.0 - j3.6 2.4 - j2.5 3.1 - il.8 3.5 - il.9 3.3 - j2.4 2.5 - j2.4 1.7-j1.8 to Change Without 1.4 - j0.5 1.2-jO.l Notice. M/A-COM, 9-102 North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020