CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate General Description Features These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain. All inputs are protected against static discharge with diodes to VDD and VSS. Y Y Y Y Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS 5V – 10V – 15V parametric ratings Symmetrical output characteristics Maximum input leakage 1 mA at 15V over full temperature range Schematic Diagrams CD4001BC/BM (/4 of device shown JeAaB Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL/F/5939 – 2 *All inputs protected by standard CMOS protection circuit. TL/F/5939 – 1 CD4011BC/BM (/4 of device shown JeA#B Logical ‘‘1’’ e High Logical ‘‘0’’ e Low TL/F/5939 – 6 *All inputs protected by standard CMOS protection circuit. TL/F/5939 – 5 C1995 National Semiconductor Corporation TL/F/5939 RRD-B30M105/Printed in U. S. A. CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate March 1988 Absolute Maximum Ratings (Notes 1 and 2) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Operating Range (VDD) Voltage at any Pin b 0.5V to VDD a 0.5V Power Dissipation (PD) Dual-In-Line Small Outline VDD Range 3 VDC to 15 VDC Operating Temperature Range CD4001BM, CD4011BM CD4001BC, CD4011BC b 55§ C to a 125§ C b 40§ C to a 85§ C 700 mW 500 mW b 0.5 VDC to a 18 VDC b 65§ C to a 150§ C Storage Temperature (TS) Lead Temperature (TL) (Soldering, 10 seconds) 260§ C DC Electrical Characteristics CD4001BM, CD4011BM (Note 2) Symbol Parameter b 55§ C Conditions Min Max a 25§ C Min a 125§ C Typ Max Min Units Max IDD Quiescent Device Current VDD e 5V, VIN e VDD or VSS VDD e 10V, VIN e VDD or VSS VDD e 15V, VIN e VDD or VSS 0.25 0.50 1.0 0.004 0.005 0.006 0.25 0.50 1.0 7.5 15 30 mA mA mA VOL Low Level Output Voltage VDD e 5V VDD e 10V VDD e 15V 0.05 0.05 0.05 0 0 0 0.05 0.05 0.05 0.05 0.05 0.05 V V V VOH High Level Output Voltage VDD e 5V VDD e 10V VDD e 15V VIL Low Level Input Voltage VDD e 5V, VO e 4.5V VDD e 10V, VO e 9.0V VDD e 15V, VO e 13.5V VIH High Level Input Voltage VDD e 5V, VO e 0.5V VDD e 10V, VO e 1.0V VDD e 15V, VO e 1.5V 3.5 7.0 11.0 3.5 7.0 11.0 3 6 9 3.5 7.0 11.0 V V V IOL Low Level Output Current (Note 3) VDD e 5V, VO e 0.4V VDD e 10V, VO e 0.5V VDD e 15V, VO e 1.5V 0.64 1.6 4.2 0.51 1.3 3.4 0.88 2.25 8.8 0.36 0.9 2.4 mA mA mA IOH High Level Output Current (Note 3) VDD e 5V, VO e 4.6V VDD e 10V, VO e 9.5V VDD e 15V, VO e 13.5V b 0.64 b 1.6 b 4.2 b 0.51 b 1.3 b 3.4 b 0.88 b 2.25 b 8.8 b 0.36 b 0.9 b 2.4 mA mA mA IIN Input Current VDD e 15V, VIN e 0V VDD e 15V, VIN e 15V ( ( lIOl k 1 mA lIOl k 1 mA 4.95 9.95 14.95 4.95 9.95 14.95 1.5 3.0 4.0 5 10 15 2 4 6 4.95 9.95 14.95 V V V 1.5 3.0 4.0 1.5 3.0 4.0 b 0.10 b 10 b 5 b 0.10 b 1.0 0.10 10b5 0.10 1.0 V V V mA mA Connection Diagrams CD4011BC/CD4011BM Dual-In-Line Package CD4001BC/CD4001BM Dual-In-Line Package TL/F/5939 – 4 Top View Order Number CD4001B or CD4011B TL/F/5939–3 Top View 2 DC Electrical Characteristics CD4001BC, CD4011BC (Note 2) Symbol Parameter b 40§ C Conditions Min a 25§ C Max Min a 85§ C Min Units Typ Max Max 1 2 4 0.004 0.005 0.006 1 2 4 7.5 15 30 mA mA mA 0.05 0.05 0.05 0 0 0 0.05 0.05 0.05 0.05 0.05 0.05 V V V IDD Quiescent Device Current VDD e 5V, VIN e VDD or VSS VDD e 10V, VIN e VDD or VSS VDD e 15V, VIN e VDD or VSS VOL Low Level Output Voltage VDD e 5V VDD e 10V VDD e 15V High Level Output Voltage VDD e 5V VDD e 10V VDD e 15V VIL Low Level Input Voltage VDD e 5V, VO e 4.5V VDD e 10V, VO e 9.0V VDD e 15V, VO e 13.5V VIH High Level Input Voltage VDD e 5V, VO e 0.5V VDD e 10V, VO e 1.0V VDD e 15V, VO e 1.5V 3.5 7.0 11.0 3.5 7.0 11.0 3 6 9 3.5 7.0 11.0 V V V IOL Low Level Output Current (Note 3) VDD e 5V, VO e 0.4V VDD e 10V, VO e 0.5V VDD e 15V, VO e 1.5V 0.52 1.3 3.6 0.44 1.1 3.0 0.88 2.25 8.8 0.36 0.9 2.4 mA mA mA IOH High Level Output Current (Note 3) VDD e 5V, VO e 4.6V VDD e 10V, VO e 9.5V VDD e 15V, VO e 13.5V b 0.52 b 1.3 b 3.6 b 0.44 b 1.1 b 3.0 b 0.88 b 2.25 b 8.8 b 0.36 b 0.9 b 2.4 mA mA mA IIN Input Current VDD e 15V, VIN e 0V VDD e 15V, VIN e 15V VOH ( (ll lIOl k 1 mA 4.95 9.95 14.95 IO k 1 mA 4.95 9.95 14.95 5 10 15 1.5 3.0 4.0 2 4 6 4.95 9.95 14.95 1.5 3.0 4.0 V V V 1.5 3.0 4.0 V V V b 0.30 b 10 b 5 b 0.30 b 1.0 0.30 10b5 0.30 1.0 mA mA AC Electrical Characteristics* CD4001BC, CD4001BM TA e 25§ C, Input tr; tf e 20 ns. CL e 50 pF, RL e 200k. Typical temperature coefficient is 0.3%/§ C. Conditions Typ Max Units tPHL Symbol Propagation Delay Time, High-to-Low Level Parameter VDD e 5V VDD e 10V VDD e 15V 120 50 35 250 100 70 ns ns ns tPLH Propagation Delay Time, Low-to-High Level VDD e 5V VDD e 10V VDD e 15V 110 50 35 250 100 70 ns ns ns tTHL, tTLH Transition Time VDD e 5V VDD e 10V VDD e 15V 90 50 40 200 100 80 ns ns ns CIN Average Input Capacitance Any Input 5 7.5 pF CPD Power Dissipation Capacity Any Gate 14 pF *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: All voltages measured with respect to VSS unless otherwise specified. Note 3: IOL and IOH are tested one output at a time. 3 AC Electrical Characteristics* CD4011BC, CD4011BM TA e 25§ C, Input tr; tf e 20 ns. CL e 50 pF, RL e 200k. Typical Temperature Coefficient is 0.3%/§ C. Parameter Conditions Typ Max Units tPHL Symbol Propagation Delay, High-to-Low Level VDD e 5V VDD e 10V VDD e 15V 120 50 35 250 100 70 ns ns ns tPLH Propagation Delay, Low-to-High Level VDD e 5V VDD e 10V VDD e 15V 85 40 30 250 100 70 ns ns ns tTHL, tTLH Transition Time VDD e 5V VDD e 10V VDD e 15V 90 50 40 200 100 80 ns ns ns CIN Average Input Capacitance Any Input 5 7.5 CPD Power Dissipation Capacity Any Gate 14 pF pF *AC Parameters are guaranteed by DC correlated testing. Typical Performance Characteristics Typical Transfer Characteristics Typical Transfer Characteristics TL/F/5939–7 Typical Transfer Characteristics TL/F/5939 – 8 TL/F/5939 – 9 Typical Transfer Characteristics TL/F/5939 – 11 TL/F/5939–10 FIGURE 5 4 TL/F/5939 – 12 FIGURE 6 Typical Performance Characteristics (Continued) TL/F/5939–13 FIGURE 7 TL/F/5939 – 14 FIGURE 8 TL/F/5939 – 15 FIGURE 9 TL/F/5939–16 TL/F/5939 – 18 FIGURE 10 TL/F/5939 – 17 FIGURE 11 FIGURE 12 TL/F/5939 – 19 TL/F/5939 – 20 FIGURE 13 FIGURE 14 5 CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ NS Package Number J14A Molded Dual-In-Line Package (N) Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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