MM54HC133/MM74HC133 13-Input NAND Gate General Description Features This NAND gate utilizes advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the ability to drive 10 LS-TTL loads. The 54HC/74HC logic family is functionally as well as pin-out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static discharge by internal diode clamps to VCC and ground. Y Y Y Y Y Typical propagation delay: 20 ns Wide power supply range: 2 – 6V Low quiescent current: 20 mA maximum (74HC Series) Low input current: 1 mA maximum Fanout of 10 LS-TTL loads Connection and Logic Diagrams Dual-In-Line Package TL/F/5134 – 1 Top View Order Number MM54HC133 or MM74HC133 TL/F/5134 – 2 C1995 National Semiconductor Corporation TL/F/5134 RRD-B30M105/Printed in U. S. A. MM54HC133/MM74HC133 13-Input NAND Gate January 1988 Absolute Maximum Ratings (Notes 1 & 2) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (VCC) Supply Voltage (VCC) DC Input Voltage (VIN) DC Output Voltage (VOUT) Clamp Diode Current (IIK, IOK) DC Output Current, per pin (IOUT) DC VCC or GND Current, per pin (ICC) Storage Temperature Range (TSTG) Power Dissipation (PD) (Note 3) S.O. Package only Lead Temperature (TL) (Soldering 10 seconds) DC Input or Output Voltage (VIN, VOUT) b 0.5 to a 7.0V b 1.5 to VCC a 1.5V Operating Temp. Range (TA) MM74HC MM54HC b 0.5 to VCC a 0.5V g 20 mA Min 2 Max 6 0 VCC Units V V b 40 b 55 a 85 a 125 §C §C 1000 500 400 ns ns ns Input Rise or Fall Times VCC e 2.0V (tr, tf) VCC e 4.5V VCC e 6.0V g 25 mA g 50 mA b 65§ C to a 150§ C 600 mW 500 mW 260§ C DC Electrical Characteristics (Note 4) Symbol Parameter Conditions TA e 25§ C VCC 74HC TA eb40 to 85§ C Typ 54HC TA eb55 to 125§ C Units Guaranteed Limits VIH Minimum High Level Input Voltage 2.0V 4.5V 6.0V 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V V V VIL Maximum Low Level Input Voltage** 2.0V 4.5V 6.0V 0.5 1.35 1.8 0.5 1.35 1.8 0.5 1.35 1.8 V V V VOH Minimum High Level Output Voltage VIN e VIH or VIL lIOUTl s20 mA 2.0V 4.5V 6.0V 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V V V 4.5V 6.0V 4.2 5.7 3.98 5.48 3.84 5.34 3.7 5.2 V V 2.0V 4.5V 6.0V 0 0 0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V V V VIN e VIH lIOUTl s4.0 mA lIOUTl s5.2 mA 4.5V 6.0V 0.2 0.2 0.26 0.26 0.33 0.33 0.4 0.4 V V VIN e VIH or VIL lIOUTl s4.0 mA lIOUTl s5.2 mA VOL Maximum Low Level Output Voltage VIN e VIH lIOUTl s20 mA IIN Maximum Input Current VIN e VCC or GND 6.0V g 0.1 g 1.0 g 1.0 mA ICC Maximum Quiescent Supply Current VIN e VCC or GND IOUT e 0 mA 6.0V 2.0 20 40 mA Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Note 2: Unless otherwise specified all voltages are referenced to ground. Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package: b 12 mW/§ C from 65§ C to 85§ C; ceramic ‘‘J’’ package: b 12 mW/§ C from 100§ C to 125§ C. Note 4: For a power supply of 5V g 10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing with this supply. Worst case VIH and VIL occur at VCC e 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used. **VIL limits are currently tested at 20% of VCC. The above VIL specification (30% of VCC) will be implemented no later than Q1, CY’89. 2 AC Electrical Characteristics VCC e 5V, TA e 25§ C, CL e 15 pF, tr e tf e 6 ns Symbol Parameter Conditions tPHL, tPLH Maximum Propagation Delay Typ Guaranteed Limit Units 20 30 ns AC Electrical Characteristics VCC e 2.0V to 6.0V, CL e 50 pF, tr e tf e 6 ns (unless otherwise specified) Symbol Parameter Conditions TA e 25§ C VCC Typ 74HC TA eb40 to 85§ C 54HC TA eb55 to 125§ C Units Guaranteed Limits tPHL, tPLH Maximum Propagation Delay 2.0V 4.5V 6.0V 66 23 18 160 35 30 190 42 36 220 49 42 ns ns ns tTLH, tTHL Maximum Output Rise and Fall Time 2.0V 4.5V 6.0V 25 7 6 75 15 13 95 19 16 110 22 19 ns ns ns CPD Power Dissipation Capacitance (Note 5) 34 CIN Maximum Input Capacitance 5 pF 10 10 10 pF Note 5: CPD determines the no load dynamic power consumption, PD e CPD VCC2 f a ICC VCC, and the no load dynamic current consumption, IS e CPD VCC f a ICC. Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number MM54HC133J or MM74HC133J NS Package Number J16A 3 MM54HC133/MM74HC133 13-Input NAND Gate Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number MM74HC133N NS Package Number N16E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 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