Low Power Low Offset Voltage Quad Comparators General Description Features The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mV max for all four comparators. These were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. These comparators also have a unique characteristic in that the input common-mode voltage range includes ground, even though operated from a single power supply voltage. Application areas include limit comparators, simple analog to digital converters; pulse, squarewave and time delay generators; wide range VCO; MOS clock timers; multivibrators and high voltage digital logic gates. The LM139 series was designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies, they will directly interface with MOS logic— where the low power drain of the LM139/LM139A is a distinct advantage over standard comparators. ■ Available with Radiation Guarantee ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 100 krad(Si) — Total Ionizing Dose 100 krad(Si) — ELDRS Free Wide supply voltage range LM139/139A Series 2 to 36 VDC or ±1 to ±18 VDC Very low supply current drain (0.8 mA) — independent of supply voltage Low input biasing current: 25 nA Low input offset current: ±5 nA Offset voltage: ±1 mV Input common-mode voltage range includes GND Differential input voltage range equal to the power supply voltage Low output saturation voltage: 250 mV at 4 mA Output voltage compatible with TTL, DTL, ECL, MOS and CMOS logic systems Advantages ■ ■ ■ ■ ■ ■ High precision comparators Reduced VOS drift over temperature Eliminates need for dual supplies Allows sensing near GND Compatible with all forms of logic Power drain suitable for battery operation Ordering Information NS Part Number SMD Part Number NS Package Number Package Description LM139E/883 E20A 20 terminal Leadless Chip Carrier LM139J/883 J14A 14LD CERDIP 14LD CERPACK LM139AW-SMD 5962–8773901DA W14B LM139AWG-SMD 5962–8773901XA WG14A LM139AE/883 LM139AJ/883 14LD Ceramic SOIC E20A 20 terminal Leadless Chip Carrier J14A 14LD CERDIP LM139AJRQMLV (Note 11) 5962R9673801VCA 100 krad(Si) J14A 14LD CERDIP LM139AJRLQMLV (Note 15) ELDRS Free 5962R9673802VCA 100 krad(Si) J14A 14LD CERDIP LM139AW-QMLV 5962–9673801VDA W14B 14LD CERPACK W14B 14LD CERPACK 5962–9673801VXA WG14A 14LD Ceramic SOIC WG14A 14LD Ceramic SOIC LM139AWGRQMLV (Note 11) 5962R9673801VXA 100 krad(Si) WG14A 14LD Ceramic SOIC LM139AWGRLQMLV (Note 15) ELDRS Free 5962R9673802VXA 100 krad(Si) WG14A 14LD Ceramic SOIC LM139AWRQMLV (Note 11) 5962R9673801VDA 100 krad(Si) W14B LM139AW/883 LM139AWG-QMLV LM139AWG/883 © 2010 National Semiconductor Corporation 201221 14LD CERPACK www.national.com LM139AQML/LM139QML Low Power Low Offset Voltage Quad Comparators October 15, 2010 LM139AQML LM139QML LM139AQML/LM139QML NS Part Number SMD Part Number NS Package Number Package Description LM139AWRLQMLV (Note 15) ELDRS Free 5962R9673802VDA 100 krad(Si) W14B LM139 MDE (Note 15) ELDRS Free 5962R9673802V9A 100 krad(Si) (Note 1) Bare Die LM139 MDR (Note 11) 5962R9673801V9A 100 krad(Si) (Note 1) Bare Die 14LD CERPACK Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die Connection Diagrams Dual-In-Line Package 20122102 See NS Package NumberJ14A 20122127 See NS Package Number W14B, WG14A 20122144 See NS Package Number E20A www.national.com 2 LM139AQML/LM139QML Absolute Maximum Ratings (Note 2) LM139 / LM139A 36 VDC or ±18 VDC 36 VDC −0.3 VDC to +36 VDC 50 mA Supply Voltage, V+ Differential Input Voltage (Note 8) Input Voltage Input Current (VIN < −0.3 VDC) (Note 4) Power Dissipation (Note 5, Note 14) LCC CERDIP CERPACK SOIC Sink Current (approx) (Note 12) Output Short-Circuit to GND, (Note 3) Storage Temperature Range 1250 mW 1200 mW 680 mW 680 mW 20mA Continuous -65°C ≤ TA ≤ +150°C +150°C 300°C Maximum Junction Temperature (TJ) Lead Temperature (Soldering, 10 seconds) Operating Temperature Range -55°C ≤ TA ≤ +125°C Thermal Resistance θJA LCC LCC CERDIP CERDIP CERPACK CERPACK SOIC SOIC (Still Air) (500LF / Min Air flow) (Still Air) (500LF / Min Air flow) (Still Air) (500LF / Min Air flow) (Still Air) (500LF / Min Air flow) 100°C/W 73°C/W 103°C/W 65°C/W 183°C/W 120°C/W 183°C/W 120°C/W θJC LCC CERDIP CERPACK SOIC Package Weight (typical) LCC CERDIP CERPACK SOIC ESD rating (Note 13) 28°C/W 23°C/W 23°C/W 23°C/W 470mg 2,190mg 460mg 410mg 600V Recommended Operating Conditions Supply Voltage 5.0 VDC to +30 VDC −55°C ≤ TA ≤ +125°C Ambient Operating Temperature Range 3 www.national.com LM139AQML/LM139QML Quality Conformance Inspection Mil-Std-883, Method 5005 — Group A Subgroup 1 2 3 4 5 6 7 8A 8B 9 10 11 www.national.com Description Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at 4 Temp (°C) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 883 Electrical Characteristics DC Parameters The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameters Conditions ICC Supply Current RL = Infinity Supply Current +V = 30V, RL = Infinity Input Offset Voltage +V = 30V VIO Notes 2.0 mA 1, 2, 3 1, 2, 3 mA mV 1 -9.0 9.0 mV 2, 3 +V = 30V, VCM = 28.5V -5.0 5.0 mV 1 +V = 30V, VCM = 28.0V -9.0 9.0 mV 2, 3 -5.0 5.0 mV 1 -9.0 9.0 mV 2, 3 dB 1 dB 1 PSRR Power Supply Rejection Ratio +V = 5V to 30V ± IBias Input Bias Current VO = 1.5V 60 60 (Note 6) -100 -1.0 nA 1 (Note 6) -300 -1.0 nA 2, 3 -25 25 nA 1 -100 100 nA 2, 3 1.0 µA 1, 2, 3 mA 1 VO = 1.5V ICEX Output Leakage Current +V = 30V, VO = 30V ISink Output Sink Current VO = 1.5V VSat Saturation Voltage ISink = 4mA 6.0 AV Voltage Gain +V = 15V, RL ≥ 15ΩK, VI = 1V to 11V VCM Common Mode Voltage Range +V = 30V Differential Input Voltage Subgroups 5.0 +V = 30V, VCM = 0V to 28.5V VDiff Unit 2.0 Common Mode Rejection Ratio Input Offset Current Max -5.0 CMRR IIO Min 400 mV 1 700 mV 2, 3 V/mV 1 50 (Note 9) 0 V+ (1.5) V 1 (Note 9) 0 V+ (2.0) V 2, 3 +V = 30V, -V = 0V, +VI = 36V, -VI (Note 10) = 0V 500 nA 1, 2, 3 +V = 30V, -V = 0V, +VI = 0V, -VI = (Note 10) 36V 500 nA 1, 2, 3 Max Unit Subgroups AC Parameters The following conditions apply, unless otherwise specified. +V = 5V Symbol Parameters Conditions tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 Notes 5 Min www.national.com LM139AQML/LM139QML LM139 LM139AQML/LM139QML LM139A SMD 5962–8773901 Electrical Characteristics DC Parameters The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions ICC Supply Current ICEX VSat Output Leakage Current Saturation Voltage Max Unit Subgroups +V = 30V, RL = Infinity 3.0 mA 1, 2, 3 RL = Infinity 3.0 mA 1, 2, 3 +V = 30V, -VI = 0V, +VI ≥ 1V, VO = 30V 0.5 µA 1 1.0 µA 2, 3 ISink ≤ 4mA, -VI = 1V, +VI = 0V 400 mV 1 700 mV 2, 3 Notes Min ISink Output Sink Current VO ≥ 1.5V, -VI = 1V, +VI = 0V 6.0 mA 1 VIO Input Offset Voltage RS = 0Ω -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 -2.0 2.0 mV 1 +V = 30V, RS = 0Ω +V = 30V, VCM = 28V, VO = 1.4V, RS = 0Ω -4.0 4.0 mV 2, 3 (Note 6) -100 -1.0 nA 1 (Note 6) -300 -1.0 nA 2, 3 -25 25 nA 1 -100 100 nA 2, 3 70 dB 1, 2, 3 ≥ 15KΩ 70 dB 1, 2, 3 +V = 15V, RL ≥ 15KΩ, VO = 1V to 11V 50 V/mV 4 25 V/mV 5, 6 ±IIB Input Bias Current VO = 1.5V IIO Input Offset Current VO = 1.5V PSRR Power Supply Rejection Ratio +V = 5V to 30V CMRR Common Mode Rejection Ratio +V = 30V, VCM = 0V to 28V, RL AV VCM Voltage Gain Common Mode Voltage Range +V = 30V +V = 5V (Note 9) 0 V+ (2.0) V 1, 2, 3 (Note 9) 0 V+ (2.0) V 1, 2, 3 Min Max Unit Subgroups AC Parameters The following conditions apply, unless otherwise specified. +V = 5V Symbol Parameters Conditions tRLH Response Time VOD = 5mV, RL = 5.1KΩ 5.0 µS 9 tRHL Response Time VOD = 5mV, RL = 5.1KΩ 2.5 µS 9 www.national.com Notes 6 883, QMLV & RH, SMD 5962–9673801 Electrical Characteristics DC Parameters (Note 11, Note 15) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameters Conditions Max Unit Subgroups ICC Supply Current RL = Infinity 2.0 mA 1, 2, 3 +V = 30V, RL = Infinity Notes Min 2.0 mA 1, 2, 3 ICEX Output Leakage Current +V = 30V, VO = 30V 1.0 µA 1, 2, 3 VSat Saturation Voltage ISink = 4mA 400 mV 1 700 mV 2, 3 ISink Output Sink Current VO = 1.5V mA 1 VIO Input Offset Voltage 6.0 -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 +V = 30V, VCM = 28.5V, VO = 1.5V -2.0 2.0 mV 1 +V = 30V, VCM = 28.0V, VO = 1.5V -4.0 4.0 mV 2, 3 (Note 6) -100 -1.0 nA 1 (Note 6) -300 -1.0 nA 2, 3 -25 25 nA 1 -100 100 +V = 30V ± IBias Input Bias Current VO = 1.5V IIO Input Offset Current VO = 1.5V nA 2, 3 PSRR Power Supply Rejection Ratio +V = 5V to 30V 60 dB 1 CMRR Common Mode Rejection Ratio +V = 30V, VCM = 0V to 28.5V 60 dB 1 AV Voltage Gain +V = 15V, RL ≥ 15KΩ, VO = 1V to 11V 50 V/mV 1 VCM Common Mode Voltage Range +V = 30V VDiff Differential Input Voltage (Note 7, Note 9) 0 V+ (1.5) V 1 (Note 7, Note 9) 0 V+ (2.0) V 2, 3 (Note 10) 500 nA 1, 2, 3 +V = 30V, -V = 0V, +VI = 0V, -VI = (Note 10) 36V 500 nA 1, 2, 3 Max Unit Subgroups +V = 30V, -V =0V, +VI = 36V, -VI = 0V AC Parameters (Note 11, Note 15) The following conditions apply, unless otherwise specified. +V = 5V Symbol Parameters Conditions tRLH Response Time VOD = 5mV 5.0 µS 4 VOD = 50mV 0.8 µS 4 tRHL Response Time VOD = 5mV 2.5 µS 4 VOD = 50mV 0.8 µS 4 Notes 7 Min www.national.com LM139AQML/LM139QML LM139A LM139AQML/LM139QML DC Parameters Delta Values The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Deltas required for S-Level, MLS (as specified on Internal Processing instructions (IPI)), and QMLV product at Group B, Subgroup 5. Symbol Parameters VIO Input Offset Voltage ± IBias Input Bias Current VO = 1.5V IIO Input Offset Current VO = 1.5V DC/AC Parameters Conditions Notes (Note 6) 50K Post Rad Limits +25°C Min Max Unit Subgroups -1.0 1.0 mV 1 -15 15 nA 1 -10 +10 nA 1 Min Max Unit Subgroups (Note 11) The following conditions apply, unless otherwise specified. DC: +V = 5V, VCM = 0V AC: +V = 5V Symbol Parameters Conditions VIO Input Offset Voltage +V = 5V, VCM = 0 -2.5 2.5 mV 1 +V = 30V, VCM = 0 -2.5 2.5 mV 1 +V = 30V, VCM = 28.5V, VO = 1.5V -2.5 2.5 mV 1 -110 -1.0 nA 1 0.9 µS 4 Notes ± IBias Input Bias Current VO = 1.5V tRLH Response Time VOD (Overdrive) = 50mV DC/AC Parameters (Note 6) 100K Post Rad Limits +25°C (Note 11, Note 15) The following conditions apply, unless otherwise specified. DC: +V = 5V, VCM = 0V AC: +V = 5V Symbol Parameters Conditions Min Max Unit Subgroups VIO Input Offset Voltage +V = 5V, VCM = 0 -4.0 4.0 mV 1 +V = 30V, VCM = 0 -4.0 4.0 mV 1 +V = 30V, VCM = 28.5V, VO = 1.5V -4.0 4.0 mV 1 -110 -1.0 nA 1 1.0 µS 4 Notes ± IBias Input Bias Current VO = 1.5V tRLH Response Time VOD (Overdrive) = 50mV www.national.com (Note 6) 8 Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 20 mA independent of the magnitude of V+. Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 VDC (at 25°)C. Note 5: The low bias dissipation and the ON-OFF characteristics of the outputs keeps the chip dissipation very small (PD ≤ 100mW), provided the output transistors are allowed to saturate. Note 6: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the reference or input lines. Note 7: The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the commonmode voltage range is V+ −1.5V for Subgroup 1, or V+ −2.0V for Subgroup 2 & 3. Either or both inputs can go to +30 VDC without damage, independent of the magnitude of V+. Note 8: Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the common-mode range, the comparator will provide a proper output state. The low input voltage state must not be less than −0.3 VDC (or 0.3 VDCbelow the magnitude of the negative power supply, if used) (at 25°C). Note 9: Parameter guaranteed by VIO tests Note 10: The value for VDiff is not data logged during Read and Record. Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post Radiation Limits” table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019, Condition A. Note 12: SMD 5962–8773901 only Note 13: Human Body model, 1.5 KΩ in series with 100 pF Note 14: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (Package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax — TA) / θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 15: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019, condition D, MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics, except as listed in the “Post Radiation Limits” table. Radiation end point limits for the noted parameters are guaranteed for only the conditions as specified in MIL-STD-883, Method 1019, condition D. 9 www.national.com LM139AQML/LM139QML Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guaranteed specific performance limits. For guaranteed specifications and test conditions, see, the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. LM139AQML/LM139QML Typical Performance Characteristics LM139, LM139A Supply Current Input Current 20122134 20122135 Output Saturation Voltage Response Time for Various Input Overdrives —Negative Transition 20122136 20122137 Response Time for Various Input Overdrives —Positive Transition 20122138 www.national.com 10 LM139AQML/LM139QML Driving CMOS Application Hints The LM139 series are high gain, wide bandwidth devices which, like most comparators, can easily oscillate if the output lead is inadvertently allowed to capacitively couple to the inputs via stray capacitance. This shows up only during the output voltage transition intervals as the comparator changes states. Power supply bypassing is not required to solve this problem. Standard PC board layout is helpful as it reduces stray input-output coupling. Reducing this input resistors to < 10 kΩ reduces the feedback signal levels and finally, adding even a small amount (1 to 10 mV) of positive feedback (hysteresis) causes such a rapid transition that oscillations due to stray feedback are not possible. Simply socketing the IC and attaching resistors to the pins will cause input-output oscillations during the small transition intervals unless hysteresis is used. If the input signal is a pulse waveform, with relatively fast rise and fall times, hysteresis is not required. All pins of any unused comparators should be tied to the negative supply. The bias network of the LM139 series establishes a drain current which is independent of the magnitude of the power supply voltage over the range of from 2 VDC to 30 VDC. It is usually unnecessary to use a bypass capacitor across the power supply line. The differential input voltage may be larger than V+ without damaging the device. Protection should be provided to prevent the input voltages from going negative more than −0.3 VDC (at 25°C). An input clamp diode can be used as shown in the applications section. The output of the LM139 series is the uncommitted collector of a grounded-emitter NPN output transistor. Many collectors can be tied together to provide an output OR'ing function. An output pull-up resistor can be connected to any available power supply voltage within the permitted supply voltage range and there is no restriction on this voltage due to the magnitude of the voltage which is applied to the V+ terminal of the LM139A package. The output can also be used as a simple SPST switch to ground (when a pull-up resistor is not used). The amount of current which the output device can sink is limited by the drive available (which is independent of V+) and the β of this device. When the maximum current limit is reached (approximately 16 mA), the output transistor will come out of saturation and the output voltage will rise very rapidly. The output saturation voltage is limited by the approximately 60Ω RSAT of the output transistor. The low offset voltage of the output transistor (1 mV) allows the output to clamp essentially to ground level for small load currents. 20122104 Driving TTL 20122105 AND Gate 20122108 OR Gate Typical Applications (V+ = 5.0 VDC) Basic Comparator 20122109 20122103 11 www.national.com LM139AQML/LM139QML Typical Applications (V+= 15 VDC) One-Shot Multivibrator 20122110 Bi-Stable Multivibrator 20122111 www.national.com 12 LM139AQML/LM139QML One-Shot Multivibrator with Input Lock Out 20122112 Pulse Generator 20122117 13 www.national.com LM139AQML/LM139QML Large Fan-In AND Gate ORing the Outputs 20122113 20122115 www.national.com 14 LM139AQML/LM139QML Time Delay Generator 20122114 Non-Inverting Comparator with Hysteresis Inverting Comparator with Hysteresis 20122118 20122119 15 www.national.com LM139AQML/LM139QML Squarewave Oscillator Basic Comparator 20122121 20122116 Limit Comparator Comparing Input Voltages of Opposite Polarity 20122120 20122124 www.national.com 16 LM139AQML/LM139QML Output Strobing Crystal Controlled Oscillator 20122122 * Or open-collector logic gate without pull-up resistor 20122125 17 www.national.com www.national.com 18 V+ = +30 VDC 250 mVDC ≤ VC ≤ +50 VDC 700 Hz ≤ fO ≤ 100 kHz Two-Decade High-Frequency VCO 20122123 LM139AQML/LM139QML Zero Crossing Detector (Single Power Supply) 20122130 20122128 Split-Supply Applications (V+ = +15 VDC and V− = −15 VDC) MOS Clock Driver 20122131 19 www.national.com LM139AQML/LM139QML Transducer Amplifier LM139AQML/LM139QML Zero Crossing Detector Comparator With a Negative Reference 20122132 20122133 Schematic Diagram 20122101 www.national.com 20 Section Changes 02/08/05 Date Released Revision A New Release to corporate format 3 MDS datasheets converted into one Corp. datasheet format. MNLM139A-X-RH rev 4B0, MDLM139A-X rev 0C1, MNLM139–X rev 1A1. MDS datasheets will be archived. 06/28/06 B Features, Ordering Information Table, Rad Added Available with Radiation Guarantee, Low Hard Electrical Section and Notes Dose NSID's to table 5962R9673802VCA LM139AJRLQMLV, 5962R9673802VDA LM139AWRLQMLV, 5962R9673802VXA LM139AWGRLQMLV, and reference to Note 11 and 16. Note 16 to Rad Hard Electrical Heading. Note 16 to Notes. Archive Revision A. 02/13/08 C Features, Ordering Table, LM139A QMLV & RH, SMD 5962–9673801 Electrical Characteristics, Notes 10/15/2010 D Data Sheet Title, Ordering Table, 21 883, Added TID & Eldrs reference, Note 11 - Condition A. Changed VCM parameter - pg 8, Title from Drift Values to Delta Values - pg 9 & Note 16. Revision B will be Archive . Changed the data sheet title from LM139A/ LM139QML to LM139AQML/LM139QML, removed EOL NSID's. Added Bare Die NSID's. Revision C will be Archived www.national.com LM139AQML/LM139QML Revision History LM139AQML/LM139QML Physical Dimensions inches (millimeters) unless otherwise noted Leadless Chip Carrier (E)) NS Package Number E20A Ceramic Dual-In-Line Package (J) NS Package Number J14A www.national.com 22 LM139AQML/LM139QML Ceramic Flat Package (W) NS Package Number W14B Ceramic SOIC (WG) NS Package Number WG14A 23 www.national.com LM139AQML/LM139QML Low Power Low Offset Voltage Quad Comparators Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: www.national.com Products Design Support Amplifiers www.national.com/amplifiers WEBENCH® Tools www.national.com/webench Audio www.national.com/audio App Notes www.national.com/appnotes Clock and Timing www.national.com/timing Reference Designs www.national.com/refdesigns Data Converters www.national.com/adc Samples www.national.com/samples Interface www.national.com/interface Eval Boards www.national.com/evalboards LVDS www.national.com/lvds Packaging www.national.com/packaging Power Management www.national.com/power Green Compliance www.national.com/quality/green Switching Regulators www.national.com/switchers Distributors www.national.com/contacts LDOs www.national.com/ldo Quality and Reliability www.national.com/quality LED Lighting www.national.com/led Feedback/Support www.national.com/feedback Voltage References www.national.com/vref Design Made Easy www.national.com/easy www.national.com/powerwise Applications & Markets www.national.com/solutions Mil/Aero www.national.com/milaero PowerWise® Solutions Serial Digital Interface (SDI) www.national.com/sdi Temperature Sensors www.national.com/tempsensors SolarMagic™ www.national.com/solarmagic PLL/VCO www.national.com/wireless www.national.com/training PowerWise® Design University THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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