LM111QML Voltage Comparator General Description Features The LM111 is a voltage comparator that has input currents nearly a thousand times lower than devices such as the LM106 or LM710. It is also designed to operate over a wider range of supply voltages: from standard ±15V op amp supplies down to the single 5V supply used for IC logic. The output is compatible with RTL, DTL and TTL as well as MOS circuits. Further, it can drive lamps or relays, switching voltages up to 50V at currents as high as 50 mA. Both the inputs and the output of the LM111 can be isolated from system ground, and the output can drive loads referred to ground, the positive supply or the negative supply. Offset balancing and strobe capability are provided and outputs can be wire OR'ed. Although slower than the LM106 and LM710 (200 ns response time vs 40 ns) the device is also much less prone to spurious oscillations. The LM111 has the same pin configuration as the LM106 and LM710. ■ Available with radiation guaranteed ■ ■ ■ ■ ■ ■ ■ ■ 50 krad(Si) — High Dose Rate 100 krad(Si) — Low Dose and ELDRS Free Operates from single 5V supply Input current: 200 nA max. over temperature Offset current: 20 nA max. over temperature Differential input voltage range: ±30V Power consumption: 135 mW at ±15V Power supply voltage, single 5V to ±15V Offset voltage null capability Strobe capability Ordering Information NS PART NUMBER SMD PART NUMBER NS PACKAGE NUMBER PACKAGE DESCRIPTION LM111E-SMD 5962-8687701Q2A E20A 20LD Leadless Chip Carrier LM111H-SMD 5962-8687701QGA H08C 8LD TO-99 Metal Can LM111J-8-SMD 5962-8687701QPA J08A 8LD CERDIP LM111WG-SMD 5962-8687701QZA WG10A 10LD Ceramic SOIC LM111E/883 E20A 20LD Leadless Chip Carrier LM111H/883 H08C 8LD TO-99 Metal Can LM111J-8/883 J08A 8LD CERDIP LM111J/883 J14A 14LD CERDIP LM111W/883 W10A 10LD CERPACK LM111WG/883 WG10A 10LD Ceramic SOIC LM111HLQMLV (Note 12) High Dose Rate ONLY 5962L0052401VGA 50k rd(Si) H08C 8LD TO-99 Metal Can LM111J-8LQMLV (Note 12) High Dose Rate ONLY 5962L0052401VPA 50k rd(Si) J08A 8LD CERDIP LM111WGLQMLV (Note 12) High Dose Rate ONLY 5962L0052401VZA 50k rd(Si) WG10A LM111WLQMLV (Note 12) High Dose Rate ONLY 5962L0052401VHA 50k rd(Si) W10A 10LD CERPACK LM111HRLQMLV (Note 14) ELDRS Free ONLY 5962R0052402VGA 100k rd(Si) H08C 8LD TO-99 Metal Can LM111J-8RLQMLV (Note 14) ELDRS Free ONLY 5962R0052402VPA 100k rd(Si) J08A 8LD CERDIP LM111WGRLQMLV (Note 14) ELDRS Free ONLY 5962R0052402VZA 100k rd(Si) WG10A LM111WRLQMLV (Note 14) ELDRS Free ONLY 5962R0052402VHA 100k rd(Si) W10A © 2008 National Semiconductor Corporation 201285 10LD Ceramic SOIC 10LD Ceramic SOIC 10LD CERPACK www.national.com LM111QML Voltage Comparator June 30, 2008 LM111QML Connection Diagrams Metal Can Package 20128506 Note: Pin 4 connected to case Top View See NS Package Number H08C Dual-In-Line Package Dual-In-Line Package 20128534 Top View See NS Package Number J08A 20128535 Top View See NS Package Number J14A 20128533 See NS Package Number W10A, WG10A 20128573 See NS Package NumberE20A www.national.com 2 LM111QML Schematic Diagram (Note Pin connections shown on schematic diagram are for H08 package. ) 20128505 Note 1: Pin connections shown on schematic diagram are for H08 package. 3 www.national.com LM111QML Absolute Maximum Ratings (Note 2) Positive Supply Voltage Negative Supply Voltage Total Supply Voltage Output to Negative Supply Voltage GND to Negative Supply Voltage Differential Input Voltage Sink Current Input Voltage (Note 3) Power Dissipation (Note 4) 8 LD CERDIP 8 LD Metal Can 10 LD CERPACK 10 LD Ceramic SOIC 20 LD LCC Output Short Circuit Duration Maximum Strobe Current +30.0V -30.0V 36V 50V 30V ±30V 50mA ±15V 400mW @ 25°C 330mW @ 25°C 330mW @ 25°C 330mW @ 25°C 500mW @ 25°C 10 seconds 10mA -55°C ≤ TA ≤ 125°C Operating Temperature Range Thermal Resistance θJA 8 LD CERDIP (Still Air @ 0.5W) 8 LD CERDIP (500LF/Min Air flow @ 0.5W) 8 LD Metal Can (Still Air @ 0.5W) 8 LD Metal Can (500LF/Min Air flow @ 0.5W) 10 Ceramic SOIC (Still Air @ 0.5W) 10 Ceramic SOIC (500LF/Min Air flow @ 0.5W) 10 CERPACK (Still Air @ 0.5W) 10 CERPACK (500LF/Min Air flow @ 0.5W) 14 LD CERDIP (Still Air @ 0.5W) 14 LD CERDIP (500LF/Min Air flow @ 0.5W) 20 LD LCC (Still Air @ 0.5W) 20 LD LCC (500LF/Min Air flow @ 0.5W) 134°C/W 76°C/W 162°C/W 92°C/W 231°C/W 153°C/W 231°C/W 153°C/W 97°C/W 65°C/W 90°C/W 65°C/W θJC 8 LD CERDIP 8 LD Metal Can Pkg 10 LD Ceramic SOIC 10 LD CERPACK 14 LD CERDIP 20 LD LCC 21°C/W 50°C/W 24°C/W 24°C/W 20°C/W 21°C/W -65°C ≤ TA ≤ 150°C Storage Temperature Range Maximum Junction Temperature Lead Temperature (Soldering, 60 seconds) Voltage at Strobe Pin 175°C 300°C V+ = -5V Package Weight (Typical) 8 LD Metal Can 8 LD CERDIP 10 LD CERPACK 10 LD Ceramic SOIC 14 LD CERDIP 20 LD LCC ESD Rating (Note 5) 965mg 1100mg 250mg 225mg TBD TBD 300V www.national.com 4 LM111QML Recommended Operating Conditions Supply Voltage VCC = ±15VDC -55°C ≤ TA ≤ 125°C Operating Temperature Range Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A Subgroup Description Temperature (°C) 1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 5 www.national.com LM111QML LM111/883 Electrical Characteristics DC Parameters The following conditions apply, unless otherwise specified. V56 = 0, RS = 0 Ω, VCC = ±15V, VCM = 0, VO = 1.4V WRT −VCC The pin assignments are based on the 8 pin package configuration. (Note 7) Symbol Parameter Conditions Notes IIO Input Offset Current VCM = 13.5V, RS = 50KΩ VCM = 13.5V, V85 = V86 = 0V, RS = 50KΩ (Note 7) VCM = -14.5V, RS= 50KΩ VCM = -14.5V, V85 = V86 = 0V, RS= 50KΩ (Note 7) RS = 50KΩ V85 = V86 = 0V, RS = 50KΩ IIB Input Bias Current (Note 7) Min Max Subgroups Unit -10 10 nA 1 -20 20 nA 2, 3 -30 30 nA 1 -10 10 nA 1 -20 20 nA 2, 3 -30 30 nA 1 -10 10 nA 1 -20 20 nA 2, 3 -30 VCM = 13.5V, RS = 50KΩ VCM = -14.5V, RS = 50KΩ RS = 50KΩ 30 nA 1 100 nA 1 150 nA 2, 3 100 nA 1 150 nA 2, 3 100 nA 1 150 nA 2, 3 IOL Output Leakage Current VCC = ± 18V, I5 + I6 = 5mA, VO = 35V WRT -VCC (Note 7) 10 nA 1 (Note 7) 500 nA 2, 3 IGL Ground Leakage Current VCC = ± 18V, I5 + I6 = 5mA, VO = 50V WRT -VCC (Note 7) 25 nA 1 (Note 7) 500 nA 2 VI = -5mV, I7 = 50mA (Note 7) 1.5 V 1, 2, 3 VI = -6mV, I7 = 8mA (Note 7) 0.4 V 1, 2, 3 1, 2 VSat Saturation Voltage -ICC Negative Supply Current 5.0 mA 15 mA 3 +ICC Positive Supply Current 6.0 mA 1, 2 15 mA 3 IL1 IL2 VOSt Input Leakage Current Input Leakage Current VCC = ± 18V, V28 = 1V, V38 = 30V, I5 + I6 = 5mA VO = 50V WRT -VCC (Note 7) 10 nA 1 (Note 7) 30 nA 2 VCC = ± 18V, V38 = 1V, V28 = 30V, I5 + I6 = 5mA VO = 50V WRT -VCC (Note 7) 10 nA 1 (Note 7) 30 nA 2 14 V 1 14 V 1 Collector Output Voltage (Strobe) ISt = 3mA www.national.com 6 Parameter Conditions VIO Input Offset Voltage VCM = 13.5V Notes Unit Subgroups 3.0 mV 1 -4.0 4.0 mV 2, 3 -3.0 3.0 mV 1 -3.0 3.0 mV 1 -4.0 4.0 mV 2, 3 -3.0 3.0 mV 1 -3.0 3.0 mV 1 -4.0 4.0 mV 2, 3 -3.0 3.0 mV 1 VO = 0.4V, +VCC = 4.5V, -VCC = 0V, VCM = 3V -5.0 5.0 mV 1 -6.0 6.0 mV 2, 3 VO = 4.5V, +VCC = 4.5V, -VCC = 0V, VCM = 3V -3.0 3.0 mV 1 -4.0 4.0 mV 2, 3 VO = 0.4V, +VCC = 4.5V, -VCC = 0V, VCM = 0.5V -5.0 5.0 mV 1 -6.0 6.0 mV 2, 3 VO = 4.5V, +VCC = 4.5V, -VCC = 0V, VCM = 0.5V -3.0 3.0 mV 1 -4.0 4.0 mV 2, 3 (Note 7) VCM = -14.5V VCM = -14.5V, V85 = V86 = 0V V85 = V86 = 0V Large Signal Gain Max -3.0 VCM = 13.5V, V85 = V86= 0V AVS Min (Note 7) (Note 7) -12V ≤ VO ≤ 35V, RL = 1KΩ (Note 6) 40 V/mV 4 (Note 6) 30 V/mV 5, 6 AC Parameters The following conditions apply, unless otherwise specified. V56 = 0, RS = 0 Ω, VCC = ±15V, VCM = 0, VO = 1.4V WRT −VCC The pin assignments are based on the 8 pin package configuration. (Note 7) Symbol tR Parameter Conditions Response Time 7 Notes Min Max Unit Subgroups 400 nS 7 www.national.com LM111QML Symbol LM111QML LM111-SMD Electrical Characteristics SMD 5962-8687701 DC Parameters The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol VIO Min Max Unit Subgroups -3.0 +3.0 mV 1 -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = +2.5V, -VCC = -2.5V, VI = 0V, -3.0 +3.0 mV 1 -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -3 +3 mV 1 -4.5 +4.5 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -25 +25 nA 1, 2 -50 +50 nA 3 -100 0.1 nA 1, 2 -150 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 14 V 1, 2, 3 80 dB 1, 2, 3 Parameter Input Offset Voltage Conditions Notes VI = 0V, RS = 50Ω +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50Ω VIO R Raised Input Offset Voltage VI = 0V, RS = 50Ω (Note 15) +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, (Note 15) RS = 50Ω +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50Ω IIO Input Offset Current (Note 15) VI = 0V, RS = 50KΩ +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ IIOR ±IIB Raised Input Offset Current Input Bias Current VI = 0V, RS = 50KΩ (Note 15) VI = 0V, RS = 50KΩ +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ VOSt Collector Output Voltage (Strobe) +VI = Gnd, -VI = 15V, ISt = -3mA, RS = 50Ω CMRR Common Mode Rejection Ratio -28V ≤ -VCC ≤ -0.5V, RS = 50Ω, 2V ≤ +VCC ≤ 29.5V, RS = 50Ω, -14.5V ≤ VCM ≤ 13V, RS = 50Ω www.national.com (Notes 8, 13) 8 VOL ICEX IL Low Level Output Voltage Output Leakage Current Input Leakage Current +ICC -ICC Δ VIO / ΔT Δ IIO / ΔT IOS Max Unit Subgroups +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = 0.71V, VID = -6mV 0.4 V 1, 2, 3 +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = −1.75V, VID = -6mV 0.4 V 1, 2, 3 IO = 50mA, ±VI = 13V, VID = -5mV 1.5 V 1, 2, 3 IO = 50mA, ±Vl= -14V, VID = -5mV 1.5 V 1, 2, 3 -1.0 10 nA 1 -1.0 500 nA 2 Parameter Conditions Notes +VCC = 18V, -VCC = -18V, VO = 32V Min +VCC = 18V, -VCC = -18V, +VI = +12V, -VI = -17V (Note 11) -5.0 500 nA 1, 2, 3 +VCC = 18V, -VCC = -18V, +VI = -17V, -VI = +12V (Note 11) -5.0 500 nA 1, 2, 3 6.0 mA 1, 2 7.0 mA 3 -5.0 mA 1, 2 -6.0 mA 3 Power Supply Current Power Supply Current Temperature Coefficient Input Offset Voltage Temperature Coefficient Input Offset Current Short Circuit Current 25°C ≤ T ≤ 125°C (Notes 11, -25 13) 25 µV/°C 2 -55°C ≤ T ≤ 25°C (Notes 11, -25 13) 25 µV/°C 3 25°C ≤ T ≤ 125°C (Notes 11, -100 13) 100 pA/°C 2 -55°C ≤ T ≤ 25°C (Notes 11, -200 13) 200 pA/°C 3 VO = 5V, t ≤ 10mS, -VI = 0.1V, +VI = 0V (Note 10) 200 mA 1 (Note 10) 150 mA 2 (Note 10) 250 mA 3 mV 1 mV 1 +VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω -VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω ±AVE Voltage Gain (Emitter) AC Parameters RL = 600Ω 5.0 -5.0 (Note 6) 10 V/mV 4 (Note 6) 8.0 V/mV 5, 6 SMD 5962-8687701 The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol tRLHC tRHLC Parameter Conditions Notes Min Max Unit Subgroups 7, 8B Response Time (Collector Output) VOD(Overdrive) = -5mV, CL = 50pF, VI = -100mV (Note 13) 300 nS (Note 13) 640 nS 8A Response Time (Collector Output) VOD(Overdrive) = 5mV, CL = 50pF, VI = 100mV (Note 13) 300 nS 7, 8B (Note 13) 500 nS 8A 9 www.national.com LM111QML Symbol LM111QML LM111 RADIATION Electrical Characteristics SMD 5962L0052401 DC Parameters (Note 12) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol VIO Min Max Unit Subgroups -3.0 +3.0 mV 1 -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = +2.5V, -VCC = -2.5V, -3.0 +3.0 mV 1 VI = 0V, RS = 50Ω -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -3.0 +3.0 mV 1 RS = 50Ω -4.5 +4.5 mV 2, 3 VI = 0V, RS = 50KΩ -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -25 +25 nA 1, 2 -50 +50 nA 3 -100 0.1 nA 1, 2 -150 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 14 V 1, 2, 3 80 dB 1, 2, 3 Parameter Input Offset Voltage Conditions Notes VI = 0V, RS = 50Ω +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, VIO R Raised Input Offset Voltage VI = 0V, RS = 50Ω +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, (Note 15) (Note 15) RS = 50Ω +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, IIO Input Offset Current (Note 15) +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ IIOR ±IIB Raised Input Offset Current Input Bias Current VI = 0V, RS = 50KΩ (Note 15) VI = 0V, RS = 50KΩ +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ VOSt Collector Output Voltage (Strobe) +VI = Gnd, -VI = 15V, ISt = -3mA, RS = 50Ω CMRR Common Mode Rejection Ratio -28V ≤ -VCC ≤ -0.5V, RS = 50Ω, 2V ≤ +VCC ≤ 29.5V, RS = 50Ω, -14.5V ≤ VCM ≤ 13V, RS = 50Ω www.national.com (Notes 8, 13) 10 VOL ICEX IL Low Level Output Voltage Output Leakage Current Input Leakage Current +ICC -ICC Max Unit Subgroups +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = 0.5V, VID = -6mV 0.4 V 1, 2, 3 +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = 3V, VID = -6mV 0.4 V 1, 2, 3 IO = 50mA, ±VI = 13V, VID = -5mV 1.5 V 1, 2, 3 IO = 50mA, ±VI = -14V, VID = -5mV 1.5 V 1, 2, 3 -1.0 10 nA 1 -1.0 500 nA 2 Parameter Conditions Notes +VCC = 18V, -VCC = -18V, VO = 32V Min +VCC = 18V, -VCC = -18V, +VI = +12V, -VI = -17V (Note 11) -5.0 500 nA 1, 2, 3 +VCC = 18V, -VCC = -18V, +VI = -17V, -VI = +12V (Note 11) -5.0 500 nA 1, 2, 3 6.0 mA 1, 2 7.0 mA 3 -5.0 mA 1, 2 -6.0 mA 3 Power Supply Current Power Supply Current ΔVIO / ΔT Temperature Coefficient Input Offset Voltage 25°C ≤ T ≤ 125°C -25 25 µV/°C 2 -55°C ≤ T ≤ 25°C -25 25 µV/°C 3 Δ IIO / ΔT Temperature Coefficient Input Offset Current 25°C ≤ T ≤ 125°C -100 100 pA/°C 2 -55°C ≤ T ≤ 25°C -200 200 pA/°C 3 Short Circuit Current VO = 5V, t ≤ 10mS, -VI = 0.1V, +VI = 0V (Note 10) 200 mA 1 (Note 10) 150 mA 2 (Note 10) 250 mA 3 mV 1 mV 1 IOS +VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω -VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω ±AVE Voltage Gain (Emitter) RL = 600Ω 5.0 -5.0 (Note 6) 10 V/mV 4 (Note 6) 8.0 V/mV 5, 6 AC Parameters SMD 5962L0052401 (Note 12) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol tRLHC tRHLC Parameter Conditions Notes Response Time (Collector Output) VOD(Overdrive) = -5mV, CL = 50pF, VI = -100mV (Note 13) Response Time (Collector Output) VOD(Overdrive) = 5mV, CL = 50pF, VI = 100mV (Note 13) 11 Min Max Unit Subgroups 300 nS 7, 8B 640 nS 8A 300 nS 7, 8B 500 nS 8A www.national.com LM111QML Symbol LM111QML DC DELTA Parameters SMD 5962L0052401 (Note 12) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Delta calculations performed on QMLV devices at group B , subgroup 5. Symbol VIO Min Max Unit Subgroups VI = 0V, RS = 50Ω -0.5 0.5 mV 1 +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, -0.5 0.5 mV 1 -0.5 0.5 mV 1 VI = 0V, RS = 50KΩ -12.5 12.5 nA 1 +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, -12.5 12.5 nA 1 -12.5 12.5 nA 1 -5.0 5.0 nA 1 Min Max Unit Subgroups −50 +50 nA 1 −50 +50 nA 1 VI = 0V, RS = 50KΩ −150 0.1 nA 1 +VCC = 29.5V, −VCC = −0.5V, VI = 0V, VCM = −14.5V, −175 0.1 nA 1 −25 +25 nA 1 Parameter Input Offset Voltage Conditions Notes RS = 50Ω +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50Ω ±IIB Input Bias Current RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ ICEX Output Leakage Current +VCC = 18V, -VCC = -18V, VO = 32V Post Radiation Parameters SMD 5962L0052401 (Note 12) The following conditions apply, unless otherwise specified Symbol IIO Parameter Input Offset Current Conditions +VCC = 29.5V, −VCC = −0.5V, VI = 0V, VCM = −14.5V, Notes RS = 50KΩ +VCC = 2V, −VCC = −28V, VI = 0V, VCM = +13V, RS = 50KΩ ±IIB Input Bias Current RS = 50KΩ ICEX Output Leakage Current www.national.com +VCC = 18V, −VCC = −18V, VO = 32V 12 LM111QML LM111 RADIATION Electrical Characteristics SMD 5962R0052402 DC Parameters (Note 14) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol VIO Min Max Unit Subgroups -3.0 +3.0 mV 1 -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, -3.0 +3.0 mV 1 RS = 50Ω -4.0 +4.0 mV 2, 3 +VCC = +2.5V, -VCC = -2.5V, -3.0 +3.0 mV 1 VI = 0V, RS = 50Ω -4.0 +4.0 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -3.0 +3.0 mV 1 -4.5 +4.5 mV 2, 3 -3.0 +3.0 mV 1 RS = 50Ω -4.5 +4.5 mV 2, 3 VI = 0V, RS = 50KΩ -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -10 +10 nA 1, 2 -20 +20 nA 3 -25 +25 nA 1, 2 -50 +50 nA 3 -100 0.1 nA 1, 2 -150 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 -150 0.1 nA 1, 2 -200 0.1 nA 3 14 V 1, 2, 3 80 dB 1, 2, 3 Parameter Input Offset Voltage Conditions Notes VI = 0V, RS = 50Ω +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, VIO R Raised Input Offset Voltage VI = 0V, RS = 50Ω +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, (Note 15) (Note 15) RS = 50Ω +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, IIO Input Offset Current (Note 15) +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ IIOR ±IIB Raised Input Offset Current Input Bias Current VI = 0V, RS = 50KΩ (Note 15) VI = 0V, RS = 50KΩ +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ VOSt Collector Output Voltage (Strobe) +VI = Gnd, -VI = 15V, ISt = -3mA, RS = 50Ω CMRR Common Mode Rejection Ratio (Notes 8, 13) -28V ≤ -VCC ≤ -0.5V, RS = 50Ω, 2V ≤ +VCC ≤ 29.5V, RS = 50Ω, -14.5V ≤ VCM ≤ 13V, RS = 50Ω 13 www.national.com LM111QML Symbol VOL ICEX IL Low Level Output Voltage Output Leakage Current Input Leakage Current +ICC -ICC Max Unit Subgroups +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = 0.5V, VID = -6mV 0.4 V 1, 2, 3 +VCC = 4.5V, -VCC = Gnd, IO = 8mA, ±VI = 3V, VID = -6mV 0.4 V 1, 2, 3 IO = 50mA, ±VI = 13V, VID = -5mV 1.5 V 1, 2, 3 IO = 50mA, ±VI = -14V, VID = -5mV 1.5 V 1, 2, 3 -1.0 10 nA 1 -1.0 500 nA 2 Parameter Conditions Notes +VCC = 18V, -VCC = -18V, VO = 32V Min +VCC = 18V, -VCC = -18V, +VI = +12V, -VI = -17V (Note 11) -5.0 500 nA 1, 2, 3 +VCC = 18V, -VCC = -18V, +VI = -17V, -VI = +12V (Note 11) -5.0 500 nA 1, 2, 3 6.0 mA 1, 2 7.0 mA 3 -5.0 mA 1, 2 -6.0 mA 3 Power Supply Current Power Supply Current ΔVIO / ΔT Temperature Coefficient Input Offset Voltage 25°C ≤ T ≤ 125°C -25 25 µV/°C 2 -55°C ≤ T ≤ 25°C -25 25 µV/°C 3 Δ IIO / ΔT Temperature Coefficient Input Offset Current 25°C ≤ T ≤ 125°C -100 100 pA/°C 2 -55°C ≤ T ≤ 25°C -200 200 pA/°C 3 Short Circuit Current VO = 5V, t ≤ 10mS, -VI = 0.1V, +VI = 0V (Note 10) 200 mA 1 (Note 11) 150 mA 2 (Note 11) 250 mA 3 mV 1 mV 1 IOS +VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω -VIO adj. Input Offset Voltage (Adjustment) VO = 0V, VI = 0V, RS = 50Ω ±AVE Voltage Gain (Emitter) RL = 600Ω 5.0 -5.0 (Note 7) 10 V/mV 4 (Note 7) 8.0 V/mV 5, 6 AC Parameters SMD 5962R0052402 (Note 14) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Symbol tRLHC tRHLC Parameter Conditions Notes Response Time (Collector Output) VOD(Overdrive) = -5mV, CL = 50pF, VI = -100mV (Note 13) Response Time (Collector Output) VOD(Overdrive) = 5mV, CL = 50pF, VI = 100mV (Note 13) www.national.com 14 Min Max Unit Subgroups 300 nS 7, 8B 640 nS 8A 300 nS 7, 8B 500 nS 8A SMD 5962R0052402 (Note 14) The following conditions apply, unless otherwise specified. VCC = ±15V, VCM = 0 Delta calculations performed on QMLV devices at group B , subgroup 5. Symbol VIO Min Max Unit Subgroups VI = 0V, RS = 50Ω -0.5 0.5 mV 1 +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, -0.5 0.5 mV 1 -0.5 0.5 mV 1 VI = 0V, RS = 50KΩ -12.5 12.5 nA 1 +VCC = 29.5V, -VCC = -0.5V, VI = 0V, VCM = -14.5V, -12.5 12.5 nA 1 -12.5 12.5 nA 1 -5.0 5.0 nA 1 Max Unit Subgroups −100 +100 nA 1 Parameter Input Offset Voltage Conditions Notes RS = 50Ω +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50Ω ±IIB Input Bias Current RS = 50KΩ +VCC = 2V, -VCC = -28V, VI = 0V, VCM = +13V, RS = 50KΩ ICEX Output Leakage Current +VCC = 18V, -VCC = -18V, VO = 32V Post Radiation Parameters SMD 5962R0052402 (Note 14) The following conditions apply, unless otherwise specified Symbol Parameter Conditions Notes (Note 15) Min IIOR Raised Input Offset Current VI = 0V, RS = 50KΩ ±IIB Input Bias Current VI = 0V, RS = 50KΩ −180 0.1 nA 1 +VCC = 29.5V, −VCC = −0.5V, VI = −225 0.1 nA 1 −1.0 +25 nA 1 0V, VCM = −14.5V, RS = 50KΩ ICEX Output Leakage Current +VCC = 18V, −VCC = −18V, VO = 32V Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 3: This rating applies for ±15V supplies. The positive input voltage limits is 30 V above the negative supply. The negative input voltage limits is equal to the negative supply voltage or 30V below the positive supply, whichever is less. Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/ θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 5: Human body model, 1.5 kΩ in series with 100 pF. Note 6: Datalog reading in K=V/mV. Note 7: Pin names based on an 8 pin package configuration. When using higher pin count packages then: Pin 2 & 3 are Inputs, Pin 5 is Balance, Pin 6 is Balance / Strobe, Pin 7 is Output, and Pin 8 is V+. For example: V56is the Voltage between the Balance and Balance / Strobe pins Note 8: IST = −2mA at −55°C Note 9: Calculated parameter. Note 10: Actual min. limit used is 5mA due to test setup. Note 11: VID is voltage difference between inputs. Note 12: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019, Condition A. Note 13: Group A sample ONLY Note 14: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. Note 15: Subscript (R) indicates tests which are performed with input stage current raised by connecting BAL and BAL/STB terminals to +VCC. 15 www.national.com LM111QML DC DELTA Parameters LM111QML LM111 Typical Performance Characteristics Input Bias Current Input Bias Current 20128543 20128544 Input Bias Current Input Bias Current 20128546 20128545 Input Bias Current Input Bias Current 20128547 www.national.com 20128548 16 LM111QML Input Bias Current Input Overdrives Input Bias Current Input Overdrives 20128550 20128549 Input Bias Current Response Time for Various Input Overdrives 20128551 20128552 Response Time for Various Input Overdrives Output Limiting Characteristics 20128554 20128553 17 www.national.com LM111QML Supply Current Supply Current 20128555 20128556 Leakage Currents 20128557 www.national.com 18 CIRCUIT TECHNIQUES FOR AVOIDING OSCILLATIONS IN COMPARATOR APPLICATIONS When a high-speed comparator such as the LM111 is used with fast input signals and low source impedances, the output response will normally be fast and stable, assuming that the power supplies have been bypassed (with 0.1 μF disc capacitors), and that the output signal is routed well away from the inputs (pins 2 and 3) and also away from pins 5 and 6. However, when the input signal is a voltage ramp or a slow sine wave, or if the signal source impedance is high (1 kΩ to 100 kΩ), the comparator may burst into oscillation near the crossing-point. This is due to the high gain and wide bandwidth of comparators like the LM111. To avoid oscillation or instability in such a usage, several precautions are recommended, as shown in Figure 1 below. 1. 2. 3. 4. 5. The trim pins (pins 5 and 6) act as unwanted auxiliary inputs. If these pins are not connected to a trim-pot, they should be shorted together. If they are connected to a trim-pot, a 0.01 μF capacitor C1 between pins 5 and 6 will minimize the susceptibility to AC coupling. A smaller capacitor is used if pin 5 is used for positive feedback as in Figure 1. Certain sources will produce a cleaner comparator output waveform if a 100 pF to 1000 pF capacitor C2 is connected directly across the input pins. When the signal source is applied through a resistive network, RS, it is usually advantageous to choose an RS ′ of substantially the same value, both for DC and for dynamic (AC) considerations. Carbon, tin-oxide, and metal-film resistors have all been used successfully in comparator input circuitry. Inductive wire wound resistors are not suitable. When comparator circuits use input resistors (e.g. summing resistors), their value and placement are particularly important. In all cases the body of the resistor should be close to the device or socket. In other words there should be very little lead length or printed-circuit foil run between comparator and resistor to radiate or pick up signals. The same applies to capacitors, pots, etc. For example, if RS=10 kΩ, as little as 5 inches of lead between the resistors and the input pins can result in oscillations that are very hard to damp. Twisting these input leads tightly is the only (second best) alternative to placing resistors close to the comparator. Since feedback to almost any pin of a comparator can result in oscillation, the printed-circuit layout should be 6. 7. 8. 19 engineered thoughtfully. Preferably there should be a ground plane under the LM111 circuitry, for example, one side of a double-layer circuit card. Ground foil (or, positive supply or negative supply foil) should extend between the output and the inputs, to act as a guard. The foil connections for the inputs should be as small and compact as possible, and should be essentially surrounded by ground foil on all sides, to guard against capacitive coupling from any high-level signals (such as the output). If pins 5 and 6 are not used, they should be shorted together. If they are connected to a trim-pot, the trim-pot should be located, at most, a few inches away from the LM111, and the 0.01 μF capacitor should be installed. If this capacitor cannot be used, a shielding printed-circuit foil may be advisable between pins 6 and 7. The power supply bypass capacitors should be located within a couple inches of the LM111. (Some other comparators require the power-supply bypass to be located immediately adjacent to the comparator.) It is a standard procedure to use hysteresis (positive feedback) around a comparator, to prevent oscillation, and to avoid excessive noise on the output because the comparator is a good amplifier for its own noise. In the circuit of Figure 2, the feedback from the output to the positive input will cause about 3 mV of hysteresis. However, if RS is larger than 100Ω, such as 50 kΩ, it would not be reasonable to simply increase the value of the positive feedback resistor above 510 kΩ. The circuit of Figure 3 could be used, but it is rather awkward. See the notes in paragraph 7 below. When both inputs of the LM111 are connected to active signals, or if a high-impedance signal is driving the positive input of the LM111 so that positive feedback would be disruptive, the circuit of Figure 1 is ideal. The positive feedback is to pin 5 (one of the offset adjustment pins). It is sufficient to cause 1 to 2 mV hysteresis and sharp transitions with input triangle waves from a few Hz to hundreds of kHz. The positive-feedback signal across the 82Ω resistor swings 240 mV below the positive supply. This signal is centered around the nominal voltage at pin 5, so this feedback does not add to the VOS of the comparator. As much as 8 mV of VOS can be trimmed out, using the 5 kΩ pot and 3 kΩ resistor as shown. These application notes apply specifically to the LM111 and are applicable to all high-speed comparators in general, (with the exception that not all comparators have trim pins). www.national.com LM111QML Application Hints LM111QML 20128529 Pin connections shown are for LM111H in the H08 hermetic package FIGURE 1. Improved Positive Feedback 20128530 Pin connections shown are for LM111H in the H08 hermetic package FIGURE 2. Conventional Positive Feedback www.national.com 20 LM111QML 20128531 FIGURE 3. Positive Feedback with High Source Resistance 21 www.national.com LM111QML Typical Applications (Note 18) Offset Balancing Strobing 20128536 20128537 Note: Do Not Ground Strobe Pin. Output is turned off when current is pulled from Strobe Pin. Detector for Magnetic Transducer Increasing Input Stage Current (Note Increases typical common mode slew from 7.0V/μs to 18V/μs. ) 20128538 Note 16: Increases typical common mode slew from 7.0V/μs to 18V/μs. 20128539 Digital Transmission Isolator Relay Driver with Strobe 20128540 20128541 *Absorbs inductive kickback of relay and protects IC from severe voltage transients on V++ line. Note: Do Not Ground Strobe Pin. www.national.com 22 20128542 Note: Do Not Ground Strobe Pin. Note 17: Typical input current is 50 pA with inputs strobed off. Note 18: Pin connections shown on schematic diagram and typical applications are for H08 metal can package. Positive Peak Detector Zero Crossing Detector Driving MOS Logic 20128524 20128523 *Solid tantalum Typical Applications for H08 Package (Pin numbers refer to H08 package) Zero Crossing Detector Driving MOS Switch 100 kHz Free Running Multivibrator 20128513 20128514 *TTL or DTL fanout of two 23 www.national.com LM111QML Strobing off Both Input and Output Stages (Note Typical input current is 50 pA with inputs strobed off. ) LM111QML 10 Hz to 10 kHz Voltage Controlled Oscillator 20128515 *Adjust for symmetrical square wave time when VIN = 5 mV †Minimum capacitance 20 pF Maximum frequency 50 kHz Driving Ground-Referred Load Using Clamp Diodes to Improve Response 20128517 20128516 *Input polarity is reversed when using pin 1 as output. TTL Interface with High Level Logic 20128518 *Values shown are for a 0 to 30V logic swing and a 15V threshold. †May be added to control speed and reduce susceptibility to noise spikes. www.national.com 24 LM111QML Crystal Oscillator Comparator and Solenoid Driver 20128520 20128519 Precision Squarer 20128521 *Solid tantalum †Adjust to set clamp level Low Voltage Adjustable Reference Supply 20128522 *Solid tantalum 25 www.national.com LM111QML Positive Peak Detector Zero Crossing Detector Driving MOS Logic 20128524 20128523 *Solid tantalum Negative Peak Detector 20128525 *Solid tantalum Precision Photodiode Comparator 20128526 *R2 sets the comparison level. At comparison, the photodiode has less than 5 mV across it, decreasing leakages by an order of magnitude. www.national.com 26 LM111QML Switching Power Amplifier 20128527 27 www.national.com LM111QML Switching Power Amplifier 20128528 www.national.com 28 Released Revision Section Originator Changes 10/11/05 A New Release, Corporate format L. Lytle 3 MDS data sheets converted into one Corp. data sheet format. MNLM111-X Rev 0A0, MDLM111-X Rev. 0B0, and MRLM111-X-RH Rev 0E1. The drift table was eliminated from the 883 section since it did not apply; Note #3 was removed from RH & QML datasheets with SG verification that it no longer applied. Added NSID's for 50k Rad and Post Radiation Table. MDS data sheets will be archived. 12/14/05 B Ordering Information Table R. Malone Removed NSID reference LM111J-8PQMLV, 5962P0052401VPA 30k rd(Si). Reason: NSID on LTB, Inventory exhausted. Added following NSID's: LM111HPQMLV, LM111WPQMLV and LM111WGPQMLV. Reason: Still have Inventory. LM111QML, Revision A will be archived. 06/26/08 C Features, Ordering Information Table, Larry McGee Electrical section Notes. 29 Added Radiation reference, ELDRS NSID's and Note 14 and 15, Low Dose Electrical Table. Deleted 30k rd(Si) NSID's: LM111HPQMLV, LM111WPQMLV and LM111WGPQMLV. Reason: EOL 9/06/05. Revision B will be archived. www.national.com LM111QML Revision History LM111QML Physical Dimensions inches (millimeters) unless otherwise noted Metal Can Package (H) NS Package Number H08C Cavity Dual-In-Line Package (J) NS Package Number J08A www.national.com 30 LM111QML Dual-In-Line Package (J) NS Package Number J14A Leadless Chip Carrier (E) NS Package Number E20A 31 www.national.com LM111QML Cerpack Package (W) NS Package Number W10A Cerpack Gull Wing Package (WG) NS Package Number WG10A www.national.com 32 LM111QML Notes 33 www.national.com LM111QML Voltage Comparator Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: Products Design Support Amplifiers www.national.com/amplifiers WEBENCH www.national.com/webench Audio www.national.com/audio Analog University www.national.com/AU Clock Conditioners www.national.com/timing App Notes www.national.com/appnotes Data Converters www.national.com/adc Distributors www.national.com/contacts Displays www.national.com/displays Green Compliance www.national.com/quality/green Ethernet www.national.com/ethernet Packaging www.national.com/packaging Interface www.national.com/interface Quality and Reliability www.national.com/quality LVDS www.national.com/lvds Reference Designs www.national.com/refdesigns Power Management www.national.com/power Feedback www.national.com/feedback Switching Regulators www.national.com/switchers LDOs www.national.com/ldo LED Lighting www.national.com/led PowerWise www.national.com/powerwise Serial Digital Interface (SDI) www.national.com/sdi Temperature Sensors www.national.com/tempsensors Wireless (PLL/VCO) www.national.com/wireless THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS, IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS. EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness. National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. Copyright© 2008 National Semiconductor Corporation For the most current product information visit us at www.national.com National Semiconductor Americas Technical Support Center Email: [email protected] Tel: 1-800-272-9959 www.national.com National Semiconductor Europe Technical Support Center Email: [email protected] German Tel: +49 (0) 180 5010 771 English Tel: +44 (0) 870 850 4288 National Semiconductor Asia Pacific Technical Support Center Email: [email protected] National Semiconductor Japan Technical Support Center Email: [email protected]