LM709 Operational Amplifier General Description The LM709 series is a monolithic operational amplifier intended for general-purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltage and bias currents. Further, the class-B output stage gives a large output capability with minimum power drain. External components are used to frequency compensate the amplifier. Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations, compensation can be tailored to optimize high-frequency performance for any gain setting. The LM709C is the commercial-industrial version of the LM709. It is identical to the LM709 except that it is specified for operation from 0§ C to a 70§ C. Connection Diagrams Dual-In-Line Package Metal Can Package TL/H/11477 – 6 Order Number LM709CN-8 See NS Package Number N08E TL/H/11477 – 4 Dual-In-Line Package Order Number LM709AH, LM709H or LM709CH See NS Package Number H08C TL/H/11477 – 5 Order Number LM709CN See NS Package Number N14A C1995 National Semiconductor Corporation TL/H/11477 RRD-B30M115/Printed in U. S. A. LM709 Operational Amplifier February 1995 Absolute Maximum Ratings (Note 3) Storage Temperature Range LM709/LM709A/LM709C If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage LM709/LM709A/LM709C b 65§ C to a 150§ C Lead Temperature (Soldering, 10 sec.) LM709/LM709A/LM709C 300§ C g 18V Power Dissipation (Note 1) LM709/LM709A LM709C Differential Input Voltage LM709/LM709A/LM709C Operating Ratings (Note 3) Junction Temperature Range (Note 1) b 55§ C to a 150§ C LM709/LM709A LM709C 0§ C to a 100§ C Thermal Resistance (iJA) H Package 150§ C/W, (iJC) 45§ C/W 8-Pin N Package 134§ C/W 14-Pin N Package 109§ C/W 300 mW 250 mW g 5V Input Voltage LM709/LM709A/LM709C g 10V Output Short-Circuit Duration (TA e a 25§ C) LM709/LM709A/LM709C 5 seconds Electrical Characteristics (Note 2) Parameter LM709A Conditions Min Typ LM709 Max Min Typ LM709C Max Min Typ Units Max Input Offset Voltage TA e 25§ C, RS s 10 kX 0.6 2.0 1.0 5.0 2.0 7.5 mV Input Bias Current TA e 25§ C 100 200 200 500 300 1500 nA 10 50 50 200 100 500 Input Offset Current TA e 25§ C Input Resistance TA e 25§ C Output Resistance TA e 25§ C 150 Supply Current TA e 25§ C, VS e g 15V 2.5 Transient Response Risetime Overshoot VIN e 20 mV, CL s 100 pF TA e 25§ C Slew Rate TA e 25§ C Input Offset Voltage RS s 10 kX Average Temperature RS e 50X Coefficient of Input Offset Voltage RS e 10 kX 350 700 150 400 150 25§ C to TMAX 25§ C to TMIN 25§ C to TMAX 25§ C to TMIN Large Signal Voltage Gain VS e g 15V, RL t 2 kX VOUT e g 10V Output Voltage Swing VS e g 15V, RL e 10 kX VS e g 15V, RL e 2 kX 1.8 1.8 2.0 4.8 25 nA kX 150 X 2.6 5.5 2.6 6.6 mA 1.5 30 0.3 10 1.0 30 0.3 10 1.0 30 ms % 0.25 3.0 e e e e 250 3.6 0.25 TA TA TA TA 50 10 10 15 25 70 0.25 6.0 3.0 6.0 25 45 V/ms 10 6.0 12 70 15 45 mV mV/§ C V/mV g 12 g 14 g 12 g 14 g 12 g 14 g 10 g 13 g 10 g 13 g 10 g 13 g8 g 10 g8 g 10 V 70 90 65 90 dB g8 V Input Voltage Range VS e g 15V Common-Mode Rejection Ratio RS s 10 kX Supply Voltage Rejection Ratio RS s 10 kX 40 100 25 150 25 200 mV/V Input Offset Current TA e TMAX TA e TMIN 3.5 40 50 250 20 100 200 500 75 125 400 750 nA Input Bias Current TA e TMIN 0.3 0.6 0.5 1.5 0.36 2.0 mA Input Resistance TA e TMIN 80 85 110 170 40 100 50 250 kX Note 1: For operating at elevated temperatures, the device must be derated based on a 150§ C maximum junction temperature for LM709/LM709A and 100§ C maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance iJA, TJ(MAX) and TA. Note 2: These specifications apply for b 55§ C s TA s a 125§ C for the LM709/LM709A and 0§ C s TA s a 70§ C for the LM709C with the following conditions: g 9V s VS s g 15V, C1 e 5000 pF, R1 e 1.5 kX, C2 e 200 pF and R2 e 51X. Note 3: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. 2 Schematic Diagram** TL/H/11477 – 1 Typical Applications** Unity Gain Inverting Amplifier FET Operational Amplifier TL/H/11477 – 3 TL/H/11477 – 2 Voltage Follower *To be used with any capacitive loading on output. Offset Balancing Circuit TL/H/11477 – 7 **Pin connections shown are for metal can package. TL/H/11477 – 8 ² Should be equal to DC source resistance on input. 3 Guaranteed Performance Characteristics Output Voltage Swing Input Common-Mode Voltage Range Voltage Gain Supply Current TL/H/11477 – 9 4 Typical Performance Characteristics Input Offset Current Input Bias Current Supply Current Slew Rate as a Function of Closed-Loop Gain Using Recommended Compensation Networks Frequency Response for Various Closed-Loop Gains Output Voltage Swing as a Function of Frequency Input Bias Current as a Function of Supply Voltage Output Voltage Swing TL/H/11477 – 10 5 6 Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM709AH, LM709H or LM709CH NS Package Number H08C 8-Lead Molded Dual-In-Line Package (N) Order Number LM709CN-8 NS Package Number N08E 7 LM709 Operational Amplifier Physical Dimensions inches (millimeters) (Continued) 14-Lead Molded Dual-In-Line Package (N) Order Number LM709CN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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