LM3080 Operational Transconductance Amplifier General Description Features The LM3080 is a programmable transconductance block intended to fulfill a wide variety of variable gain applications. The LM3080 has differential inputs and high impedance push-pull outputs. The device has high input impedance and its transconductance (gm) is directly proportional to the amplifier bias current (IABC). High slew rate together with programmable gain make the LM3080 an ideal choice for variable gain applications such as sample and hold, multiplexing, filtering, and multiplying. The LM3080N and LM3080AN are guaranteed from 0§ C to a 70§ C. Y Y Y Y Y Slew rate (unity gain compensated): 50 V/ms Fully adjustable gain: 0 to gm # RL limit Extended gm linearity: 3 decades Flexible supply voltage range: g 2V to g 18V Adjustable power consumption Schematic and Connection Diagrams TL/H/7148 – 1 Dual-In-Line Package TL/H/7148 – 2 Top View Order Number LM3080AN, LM3080M or LM3080N See NS Package Number M08A or N08E C1995 National Semiconductor Corporation TL/H/7148 RRD-B30M115/Printed in U. S. A. LM3080 Operational Transconductance Amplifier February 1995 Absolute Maximum Ratings Amplifier Bias Current (IABC) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (Note 2) LM3080 LM3080A g 18V g 22V Power Dissipation Differential Input Voltage 250 mW g 5V 2 mA DC Input Voltage Output Short Circuit Duration Operating Temperature Range LM3080N or LM3080AN a VS to b VS Indefinite 0§ C to a 70§ C b 65§ C to a 150§ C Storage Temperature Range Lead Temperature (Soldering, 10 sec.) 260§ C Electrical Characteristics (Note 1) Parameter LM3080 Conditions Min Input Offset Voltage Input Offset Voltage Change 5 6 Max 0.4 2 5 2 mV mV mV 0.3 0.3 0.1 Forward Transconductance (gm) Over Specified Temperature Range RL e 0, IABC e 5 mA RL e 0 RL e 0 Over Specified Temperature Range RL e % , 5 mA s IABC s 500 mA RL e % , 5 mA s IABC s 500 mA 6700 5400 350 3 mV 0.1 0.6 0.1 0.6 mA 0.4 1 5 7 0.4 1 5 8 mA mA 9600 13000 7700 4000 9600 12000 mmho mmho 5 500 650 3 350 5 500 7 650 mA mA 300 a 12 b 12 Amplifier Supply Current 300 a 14.2 b 14.4 a 12 b 12 1.1 DVOFFSET/DV a DVOFFSET/DVb 20 20 Common Mode Rejection Ratio Common Mode Range Input Resistance Units Typ 0.1 Over Specified Temperature Range Input Offset Voltage Sensitivity Positive Negative 0.4 Min 5 mA s IABC s 500 mA Input Bias Current Peak Output Voltage Positive Negative Max Over Specified Temperature Range IABC e 5 mA Input Offset Current Peak Output Current LM3080A Typ 150 150 mA a 14.2 b 14.4 V V 1.1 mA 20 20 150 150 mV/V mV/V 80 110 80 110 dB g 12 g 14 g 12 g 14 V 10 26 10 26 kX Magnitude of Leakage Current IABC e 0 0.2 100 0.2 5 nA Differential Input Current IABC e 0, Input e g 4V 0.02 100 0.02 5 nA Open Loop Bandwidth Slew Rate Unity Gain Compensated 2 2 MHz 50 50 V/ms Note 1: These specifications apply for VS e g 15V and TA e 25§ C, amplifier bias current (IABC) e 500 mA, unless otherwise specified. Note 2: Selection to supply voltage above g 22V, contact the factory. 2 Typical Performance Characteristics Input Offset Voltage Input Offset Current Input Bias Current Peak Output Current Peak Output Voltage and Common Mode Range Amplifier Supply Current Total Power Dissipation Leakage Current Input Leakage Transconductance Input Resistance Amplifier Bias Voltage vs Amplifier Bias Current TL/H/7148 – 3 3 Typical Performance Characteristics (Continued) Output Resistance Input and Output Capacitance TL/H/7148 – 4 TL/H/7148 – 5 Leakage Current Test Circuit Unity Gain Follower TL/H/7148 – 6 Differential Input Current Test Circuit TL/H/7148 – 8 TL/H/7148 – 7 4 Physical Dimensions inches (millimeters) Molded Package SO (M) Order Number LM3080M NS Package Number M08A 5 LM3080 Operational Transconductance Amplifier Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM3080AN or LM3080N NS Package Number N08E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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