BAT86 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation BAS86. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Volts Continuous reverse voltage VR 50 Forward continuous current at Tamb=25oC IF 200 (1) mA Repetitive peak forward current at tp<1s, υ<0.5, Tamb=25oC IFRM 500 (1) mA Power dissipation at Tamb=25oC Ptot 200 (1) 300 (1) Thermal resistance junction to ambient air RθJA Junction temperature Tj Ambient operating temperature range Tamb Storage temperature range TS mW o C/W 125 o C -65 to +125 o C -65 to +150 o C Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=10uA (pulsed) 50 - - Volts IR VR=40V - 0.3 5.0 uA Forward voltage pulse test tp<300us, δ<2% VF IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA - 0.200 0.275 0.365 0.460 0.700 0.300 0.380 0.450 0.600 0.900 Volt Capacitance Ctot VR=1V, f=1MHz - - 8 pF trr IF=10mA, IR=10mA, to IR=1mA - - 5 ns Reverse recovery time Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 677