星合电子 SF51G THRU SF58G ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ VOLTAGE RANGE 50 to 600 Volts CURRENT 5.0 Ampere FEATURES • • • • • • DO-27 Super fast switching speed Glass passivated chip junction Low power loss, high efficiency Low leakage High Surge Capacity High temperature soldering guaranteed 260℃/10 seconds, 0.375″(9.5mm) lead length .052(1.3) .048(1.2) 1.0(25.4) MIN. .375(9.5) .335(8.5) MECHANICAL DATA • • • • • • DIA. .220(5.6) DIA. .197(5.0) Case: Transfer molded plastic Epoxy: UL94V-0 rate flame retardant Polarity: Color band denotes cathode end Lead: Plated axial lead, solderable per MIL-STD-202E method 208C Mounting position: Any Weight: 0.042ounce, 1.19 gram 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • • • Ratings at 25℃ ambient temperature unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load For capacitive load derate current by 20% SF SF SYMBOLS 51G 52G Maximum Repetitive Peak Reverse Voltage VRRM 50 100 Maximum RMS Voltage VRMS 35 70 Maximum DC Blocking Voltage VDC 50 100 Maximum Average Forward Rectified Current 0.375”(9.5mm) lead length at T A=55℃ Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 5.0A Maximum DC Reverse Current at rated DC blocking Voltage at TA = 25℃ TA = 125℃ Maximum Reverse Recovery Time Test conditions lF= 0.5A, lR= 1.0A, lRR=0.25A Typical Junction Capacitance (Measured at 1.0MHz and applied reverse voltage of 4.0V) Typical Thermal Resistance (NOTE 1) Operating Junction Temperature Range Storage Temperature Range SF 53G 150 105 100 SF 54G 200 140 200 SF 55G 300 210 300 SF 56G 400 280 400 SF 57G 500 350 500 SF 58G 600 420 600 UNIT Volts Volts Volts I(AV) 5.0 Amps IFSM 125 Amps VF 0.95 1.25 1.7 Volts IR 5.0 50 µA trr 35 nS CJ 50 RθJA TJ TSTG 30 30 (-55 to +150) (-55 to +150) Notes: 1. Thermal Resistance from Junction to Ambient with 0.375″(9.5mm) lead length, PCB mounted. 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ pF ℃/W ℃ ℃ 星合电子 SF51G THRU SF58G ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ VOLTAGE RANGE 50 to 600 Volts CURRENT 5.0 Ampere RATING AND CHRACTERISTIC CURVES SF51G THRU SF58G FIG.1-TYPICAL FORWARD CURRENT FIG.2-MAXIMUM NON-REPETITIVE PEAK DERATING CURVE FORWARD SURGE CURRENT PEAK FORWARD SURGE 4.0 3.0 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375″(9.5mm) Lead Length 1.0 150 CURRENT, (A) 5.0 (A) AVERAGE FORWARD CURRENT, 6.0 8.3ms Single Half Sine-Wave (JEDEC Method) T= T jmax 100 50 1 Cycle 0 0 25 50 55 100 75 175 150 125 10 1 AMBIENT TEMPERATURE, (° C) 2 4 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 40 100 60 8G -5 1.0 0.1 TJ =25° C Pulse Width=300us 1% Duty Cycle 10 TJ =125° C 1.0 (μA) SF 51 G54 G SF 55 G -5 6G G 57 10 CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, SF 8 FIG.4-TYPICAL REVERSE 100 10 6 NUMBER OF CYCLES AT 60 Hz 0.1 TJ =25° C 0.01 0 20 40 60 80 120 100 140 PERCENT OF RATED PEAK 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 REVERSE VOLTAGE,(%) INSTANTANEOUS FORWARD VOLTAGE,(V) FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 100 F1G.6-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC Trr 50Ω 10Ω NONINDUCTIVE NONINDUCTIVE +0.5A (-) 10 (+) 25 Vdc (approx.) (-) T J =25° C f=1MHz Vsig=50mVp-p 0 -0.25A (+) OSCILLOSCOPE (NOTE 1) -1.0A NOTES : 1.Rise Time=7ns mas. Input Impedance= 1 magohm. 22pF 2.Rise time=10ns max. Source Impedance= 50 ohms 1.0 1.0 1Ω NON INDUCTIVE PULSE GENERATIOR (NOTE 2) SF51G-SF54G SF55G-SF58G 0.1 D.U.T. 10 100 REVERSE VOLTAGE,(V) 1cm SET TIME BASE FOR 50/100ns/cm 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９