HMC1057 v00.1212 MIXERS - SUB HARMONIC - CHIP GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Typical Applications Features The HMC1057 is ideal for: Passive: No DC Bias Required • Short Haul / High Capacity Radios High Input IP3: 13 dBm [2] • Test Equipment & Sensors High LO/RF Isolation: 30 dB • Military End-Use High 2LO/RF Isolation: 50 dB • E-Band Communications Systems Wide IF Bandwidth: DC - 12 GHz • Automotive Radar Upconversion & Downconversion Applications Die Size: 1.74 x 1.73 x 0.1 mm Functional Diagram General Description The HMC1057 is a sub-harmonically pumped MMIC Mixer which can be used as either an Image reject mixer (IRM) or a single sideband upconverter. This passsive MMIC mixer is fabricated with GaAs Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, IF = 4 GHz, LO = +13 dBm, USB [1] Parameter Min. Typ. Max. Units RF Frequency Range 71 - 86 GHz IF Frequency Range DC - 12 GHz LO Frequency Range 29 - 43 GHz Conversion Loss 12 2LO to RF Isolation 50 dB LO to RF Isolation 30 dB LO to IF Isolation 35 dB RF to IF Isolation IP3 (Input) [2] 15 dB 25 dB +13 dBm [1] Unless otherwise noted , all measurements performed as an Downconverter with LO = +13 dBm [2] Upconverter performance . 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 4000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive +25 C +85 C -55 C -5 -10 -15 -20 -25 +11 dBm -5 +13 dBm -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) Image Rejection, USB vs. Temperature 80 85 90 50 IMAGE REJECTION (dBc) IMAGE REJECTION (dBc) 75 Image Rejection, USB vs. LO Power 50 40 30 +25 C +85 C -55 C 20 10 0 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 85 90 45 50 RF FREQUENCY (GHz) RF Return Loss LO Return Loss 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 70 RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP 0 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 -10 -15 -20 -10 -15 -20 -25 -25 60 65 70 75 80 RF FREQUENCY (GHz) 85 90 20 25 30 35 40 LO FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 4000 MHz IF Return Loss RF/IF Isolation 0 IF1 IF2 -10 ISOLATION (dB) RETURN LOSS (dB) -5 -10 -15 -20 RF/IF1 RF/IF2 -20 -30 -40 -50 -25 -60 0 3 6 9 12 15 60 65 IF FREQUENCY (GHz) 70 75 80 85 90 85 90 RF FREQUENCY (GHz) Upconverter Performance Conversion Gain, USB LO Isolation 0 0 -20 CONVERSION GAIN (dB) 2LO/RF LO/RF LO/IF1 LO/IF2 -10 ISOLATION (dB) MIXERS - SUB HARMONIC - CHIP 0 -30 -40 -50 -5 -10 -15 -20 -60 -25 -70 30 33 36 39 42 60 45 65 Upconverter Performance Conversion Gain vs. Input Power, USB 80 50 0 dBm -4 dBm -8 dBm -10 dBm -12 dBm -5 -10 SIDEBAND REJECTION (dBc) CONVERSION GAIN (dB) 75 Upconverter Performance Sideband Rejection , USB 0 -15 -20 -25 40 30 20 10 0 75 78 81 84 RF FREQUENCY (GHz) 3 70 RF FREQUENCY (GHz) LO FREQUENCY (GHz) 87 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 4000 MHz Upconverter Performance Input IP3, USB Conversion Gain, LSB vs. LO Drive CONVERSION GAIN (dB) 15 IP3 (dBm) 10 5 0 -5 +11 dBm -5 +13 dBm -10 -15 -20 -25 -10 60 65 70 75 80 85 60 90 65 50 80 85 90 85 90 0 +11 dBm 40 CONVERSION GAIN (dB) IMAGE REJECTION (dBc) 75 Upconverter Performance Conversion Gain, LSB Image Rejection, LSB vs. LO Drive +13 dBm 30 20 10 0 -5 -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 RF FREQUENCY (GHz) Upconverter Performance Sideband Rejection , LSB Upconverter Performance Input IP3, LSB 50 25 40 20 IP3 (dBm) SIDEBAND REJECTION (dBc) 70 RF FREQUENCY (GHz) RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP 0 20 30 20 10 15 10 5 0 0 60 62 64 66 68 70 72 74 RF FREQUENCY (GHz) 76 78 80 82 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 500 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive +25 C +85 C -55 C -5 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 -10 -15 -20 -25 +11 dBm -5 +13 dBm -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 75 80 90 IMAGE REJECTION (dBc) 50 40 30 +25 C +85 C -55 C 20 10 0 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 85 90 RF FREQUENCY (GHz) Conversion Gain, LSB vs. LO Drive Image Rejection, LSB vs. LO Drive 30 IMAGE REJECTION (dBc) 0 -5 -10 -15 -20 20 10 +11 dBm +11 dBm +13 dBm +13 dBm -25 0 60 65 70 75 80 RF FREQUENCY (GHz) 5 85 Image Rejection, USB vs. LO Drive 50 CONVERSION GAIN (dB) 70 RF FREQUENCY (GHz) Image Rejection, USB vs. Temperature IMAGE REJECTION (dBc) MIXERS - SUB HARMONIC - CHIP 0 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 2000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive +25 C +85 C -55 C -5 -10 -15 -20 -25 +11 dBm -5 +13 dBm -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) Image Rejection, USB vs. Temperature 80 85 90 50 IMAGE REJECTION (dBc) IMAGE REJECTION (dBc) 75 Image Rejection, USB vs. LO Drive 50 40 30 +25 C +85 C -55 C 20 10 0 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 85 90 RF FREQUENCY (GHz) Conversion Gain, LSB vs. LO Drive Image Rejection, LSB vs. LO Drive 30 IMAGE REJECTION (dBc) 0 CONVERSION GAIN (dB) 70 RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP 0 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 -5 -10 -15 -20 20 10 +11 dBm +11 dBm +13 dBm +13 dBm -25 0 60 65 70 75 80 RF FREQUENCY (GHz) 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 8000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive +25 C +85 C -55 C -5 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 -10 -15 -20 -25 +11 dBm -5 +13 dBm -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 80 85 90 50 IMAGE REJECTION (dBc) 50 40 30 +25 C +85 C -55 C 20 10 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 85 90 RF FREQUENCY (GHz) Conversion Gain, LSB vs. LO Drive Image Rejection, LSB vs. LO Drive 0 50 +11 dBm -5 IMAGE REJECTION (dBc) CONVERSION GAIN (dB) 75 Image Rejection, USB vs. LO Drive 0 +13 dBm -10 -15 -20 -25 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 RF FREQUENCY (GHz) 7 70 RF FREQUENCY (GHz) Image Rejection, USB vs. Temperature IMAGE REJECTION (dBc) MIXERS - SUB HARMONIC - CHIP 0 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Data Taken As IRM with External IF 90° Hybrid, IF = 12000 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive +25 C +85 C -55 C -5 -10 -15 -20 -25 +11 dBm -5 +13 dBm -10 -15 -20 -25 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) Image Rejection, USB vs. Temperature 80 85 90 50 IMAGE REJECTION (dBc) IMAGE REJECTION (dBc) 75 Image Rejection, USB vs. LO Drive 50 40 30 +25 C +85 C -55 C 20 10 0 +11 dBm 40 +13 dBm 30 20 10 0 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 70 75 80 85 90 RF FREQUENCY (GHz) Image Rejection, LSB vs. LO Drive Conversion Gain, LSB vs. LO Drive 50 -5 IMAGE REJECTION (dBc) 0 CONVERSION GAIN (dB) 70 RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP 0 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 +11 dBm +13 dBm -10 -15 -20 +11 dBm 40 +13 dBm 30 20 10 0 -25 60 65 70 75 80 RF FREQUENCY (GHz) 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz MIXERS - SUB HARMONIC - CHIP Table 1. Absolute Maximum Ratings RF Power (LO = 13 dBm) +7.5 dBm LO Drive (RF = -10 dBm) +20 dBm IF Power +5 dBm Maximum Junction Temperature 175 °C Thermal Resistance (RTH) (junction to die bottom) 258 °C/W Operating Temperature -55°C to +85°C Storage Temperature -65°C to 150°C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Table 2. Die Packaging Information Standard Alternate GP-1 (Gel Pack) [2] [1] [1] For more information refer to the “Packaging information” Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. 9 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS 0.004” 3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099]. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Table 3. Pad Descriptions Function Description 1 RF This pad is matched to 50 Ohms. 2, 4 IF1, IF2 These pads are matched to 50 Ohms. 3 LO This pad is AC coupled and Matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground Pad Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] MIXERS - SUB HARMONIC - CHIP Pad Number 10 HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs MIXERS - SUB HARMONIC - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 11 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1057 v00.1212 GaAs MMIC SUB HARMONIC I/Q MIXER, 71 - 86 GHz MIXERS - SUB HARMONIC - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12