HMC1093


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
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
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supply formats:
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Die handling consultancy
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Hot & Cold die probing
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scheduling
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o MIL-STD 883 Condition A
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storage systems for secure long
term product support
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Contact
[email protected]
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HMC1093
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HMC1093
v00.0613
MIXERS - SUB HARMONIC - CHIP
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Typical Applications
Features
The HMC1093 is ideal for:
Sub-Harmonically Pumped (x4) LO
• 38 GHz Microwave Radio
Low LO Power: -1 dBm
• 42 GHz Microwave Radio
High 4LO/RF Isolation: 20 dB
• Military End-Use
Wide IF Bandwidth: DC to 7.5 GHz
Downconversion Applications
Die Size: 1.45 X 3.85 X 0.1 mm
General Description
Functional Diagram
The HMC1093 chip is a sub-harmonically pumped
(x4) MMIC mixer with an integrated LO amplifier. The
HMC1093 chip is ideal for use as a downconverter
with 37 to 46.5 GHz at the RF port and DC to 7.5 GHz
at the IF port. The HMC1093 utilizes a GaAs PHEMT
technology and delivers excellent 4LO to RF isolation
of 20 dB, which eliminates the need for additional
filtering. The LO amplifier is a single bias (+3V) twostage design requiring only -1 dBm of LO power.
The RF and LO ports are DC blocked and matched
to 50 Ohms for ease of use. All data shown herein
is measured with the chip in a 50 Ohm test fixture
connected via 0.025mm (1 mil) wire bonds of minimal
length <0.31 mm (<12 mils).
Electrical Specifications, TA = +25° C, Vdd = +3V, USB [1]
Parameter
Min.
RF Frequency Range
Typ.
Max.
Min.
37 - 40
Typ.
LO Frequency Range
8.5 - 11
IF Frequency Range
DC - 7.5
Conversion Loss
14
4LO to RF Isolation
22
Max.
Min.
40 - 43
16
11
Typ.
Max.
43 - 46.5
Units
GHz
GHz
GHz
13
9
11
dB
15
15
dB
dB
4LO to IF Isolation
16
18
25
Input Third Order Intercept (IP3)
30
26
21
dB
20
18
16
dBm
Input Power for 1 dB Compression
Idd
[2]
140
160
210
140
160
210
140
160
210
mA
[1] Unless otherwise noted , all measurements performed as a downconverter with LO = -1 dBm.
[2] Data taken at IF = 7.5 GHz, USB.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Data taken at IF = 1 GHz, USB
2
-2
-2
-6
-10
-14
-18
-22
-26
-6
-10
-14
-18
-22
-26
-30
-30
37
38
39
40
41
42
43
44
45
46
47
37
38
39
40
RF FREQUENCY (GHz)
+25 C
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
+85 C
-55 C
-5 dBm
RF Return Loss
-1 dBm
+3 dBm
LO Return Loss vs. Temperature
5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
0
-5
-10
-15
-10
-15
-20
MIXERS - SUB HARMONIC - CHIP
Conversion Loss vs. LO Drive
2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
Conversion Loss vs. Temperature
-25
-20
37
38
39
40
41
42
43
44
45
46
7
47
8
9
+25 C
10
11
12
13
FREQUENCY (GHz)
FREQUENCY (GHz)
+85 C
+25 C
-55 C
+85 C
-55 C
4LO Isolation
IF Return Loss
0
0
-5
-10
ISOLATION (dB)
RETURN LOSS (dB)
-5
-10
-15
-15
-20
-25
-30
-20
-35
-25
0
1
2
3
4
5
6
7
8
9
IF FREQUENCY (GHz)
10
-40
8
9
10
11
12
LO FREQUENCY (GHz)
25 C
85 C
-55 C
4LO/RF
4LO/IF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Data taken at IF = 1 GHz, USB
Output IP3 vs. Temperature
42
30
38
26
22
30
IP3 (dBm)
IP3 (dBm)
34
26
18
14
22
10
18
6
14
10
2
37
38
39
40
41
42
43
44
45
46
47
37
38
39
40
+25 C
+85 C
-55 C
42
+25 C
Input IP3 vs. LO Power
43
44
45
46
47
+85 C
-55 C
Output IP3 vs. LO Power
42
30
38
26
34
22
IP3 (dBm)
30
26
18
14
22
10
18
6
14
10
2
37
38
39
40
41
42
43
44
45
46
47
37
38
39
40
-5 dBm
-1 dBm
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
3
41
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
IP3 (dBm)
MIXERS - SUB HARMONIC - CHIP
Input IP3 vs. Temperature
+3 dBm
-5 dBm
-1 dBm
+3 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Data taken at IF = 2 GHz, USB
2
-2
-2
-6
-10
-14
-18
-22
-6
-10
-14
-18
-22
-26
-26
-30
-30
37
38
39
40
41
42
43
44
45
46
37
47
38
39
40
+25 C
+85 C
42
-5 dBm
-55 C
Input IP3 vs. Temperature
43
44
45
46
47
-1 dBm
+3 dBm
Output IP3 vs. Temperature
42
30
38
26
34
22
30
IP3 (dBm)
IP3 (dBm)
41
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
26
18
14
22
10
18
6
14
10
MIXERS - SUB HARMONIC - CHIP
Conversion Loss vs. LO Drive
2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
Conversion Loss vs. Temperature
2
37
38
39
40
41
42
43
44
45
46
+85 C
37
38
39
40
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
+25 C
47
-55 C
+25 C
+85 C
-55 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Data taken at IF = 3.5 GHz, USB
2
-2
-2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
Conversion Loss vs. LO Drive
2
-6
-10
-14
-18
-22
-14
-18
-22
-30
-30
37
38
39
40
41
42
43
44
45
46
37
47
38
39
40
+25 C
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
+85 C
-5 dBm
-55 C
Input IP3 vs. Temperature
-1 dBm
+3 dBm
Output IP3 vs. Temperature
42
30
38
26
22
34
18
IP3 (dBm)
30
26
22
14
10
6
18
2
14
-2
10
-6
37
38
39
40
41
42
43
44
45
46
+25 C
+85 C
47
37
38
39
40
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
5
-6
-10
-26
-26
IP3 (dBm)
MIXERS - SUB HARMONIC - CHIP
Conversion Loss vs. Temperature
-55 C
+25 C
+85 C
-55 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Data taken at IF = 7 GHz, USB
2
-2
-2
-6
-10
-14
-18
-22
-6
-10
-14
-18
-22
-26
-26
-30
-30
37
38
39
40
41
42
43
44
45
46
37
47
38
39
40
+25 C
+85 C
43
44
45
46
47
-1 dBm
+3 dBm
Output P1dB vs. Temperature [1]
24
10
22
8
20
6
P1dB (dBm)
P1dB (dBm)
42
-5 dBm
-55 C
Input P1dB vs. Temperature [1]
18
16
4
2
14
0
12
-2
10
-4
37
38
39
40
41
42
43
44
45
46
47
37
38
39
40
RF FREQUENCY (GHz)
+25 C
+85 C
-55C
26
34
22
30
18
IP3 (dBm)
30
26
22
18
2
6
-6
2
-10
42
43
44
45
46
RF FREQUENCY (GHz)
+25 C
+85 C
46
47
+85 C
-55 C
6
-2
41
45
10
10
40
44
14
14
39
43
Output IP3 vs. Temperature
38
38
42
+25 C
42
37
41
RF FREQUENCY (GHz)
Input IP3 vs. Temperature
IP3 (dBm)
41
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
MIXERS - SUB HARMONIC - CHIP
Conversion Loss vs. LO Drive
2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
Conversion Loss vs. Temperature
47
37
38
39
40
41
42
43
44
45
46
47
RF FREQUENCY (GHz)
-55 C
+25 C
+85 C
-55 C
[1] Data taken at IF = 7.5 GHz, USB
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
MIXERS - SUB HARMONIC - CHIP
Absolute Maximum Ratings
Bias Voltage
+3.5V
RF Input Power
+18dBm
LO Input Power
+5dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 15mW/ °C above 85 °C)
1.6
Thermal Resistance (RTH)
(channel to die bottom)
66.7 °C/W
Operating Temperature
-55°C to +85°C
Storage Temperature
-65°C to 125°C
ESD Sensitivity (HBM)
Class 0, Passed 150V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Pad Descriptions
Function
Description
1
RF
This pad is AC coupled and matched to 50 Ohms.
2
IF
This pad is DC coupled
and matched to 50 Ohms.
3
LO
This pad is AC coupled
and matched to 50 Ohms.
4, 5, 6
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the LO Amplifier. External
bypass capacitors 100pF, 0.01uF, and 4.7uF are
required.
Die Bottom
Ground
Die bottom must be connected to RF/DC ground.
Pad Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
MIXERS - SUB HARMONIC - CHIP
Pad Number
8
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
MIXERS - SUB HARMONIC - CHIP
Assembly Diagram
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1093
v00.0613
GaAs MMIC SUB HARMONIC
MIXER, 37 - 46.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
MIXERS - SUB HARMONIC - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10