HMC475ST89 / 475ST89E v01.0107 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz Typical Applications Features The HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G Gain: 21.5 dB Output IP3: +35 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +8V to +12V • Microwave Radio & Test Equipment Industry Standard SOT89 Package • IF and RF Applications Functional Diagram General Description The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.5 GHz DC - 1.0 GHz 1.0 - 4.5 GHz DC - 4.5 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 4.5 GHz DC - 2.5 GHz 2.5 - 4.5 GHz DC - 3.0 GHz 3.0 - 4.5 GHz Min. 19.5 17.5 14.5 11.5 9 19.0 18.0 17.5 13.0 11.0 Typ. 21.5 19.5 16.5 13.5 12 0.008 11 14 14 13 10 25 22.0 21.0 19.5 16.0 14.0 35 30 3.5 3.8 110 Max. 0.012 135 Note: Data taken with broadband bias tee on device output. 5 - 432 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dB dB mA HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz S21 S11 S22 0 1 2 3 4 5 26 24 22 20 18 16 14 12 10 8 6 4 2 0 6 +25C +85C -40C 0 1 FREQUENCY (GHz) Input Return Loss vs. Temperature 4 5 0 -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 3 Output Return Loss vs. Temperature 0 +25C +85C -40C -10 -15 -20 -25 -30 -35 +25C +85C -40C -5 -10 -15 -20 -25 0 1 2 3 4 5 0 1 FREQUENCY (GHz) 2 0 10 9 8 NOISE FIGURE (dB) +25C +85C -40C -15 4 5 4 5 Noise Figure vs. Temperature -5 -10 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 2 FREQUENCY (GHz) AMPLIFIERS - SMT 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 5 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss -20 -25 -30 +25C +85C -40C 7 6 5 4 3 2 -35 1 -40 0 0 1 2 3 FREQUENCY (GHz) 4 5 0 1 2 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 433 HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Psat vs. Temperature Psat (dBm) P1dB vs. Temperature P1dB (dBm) AMPLIFIERS - SMT 5 +25C +85C -40C 0 1 2 3 4 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25C +85C -40C 0 5 1 2 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 45 OIP3 (dBm) 40 35 30 25 +25C +85C -40C 15 0 1 2 4 3 4 5 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 Gain P1dB Psat OIP3 8 9 10 11 Vs (Vdc) FREQUENCY (GHz) Icc (mA) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 9.1 Ohms 140 135 130 125 120 115 110 105 100 95 90 85 80 75 6.9 +85C +25C -40C 7 7.1 7.2 7.3 7.4 7.5 Vcc (Vdc) 5 - 434 5 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 110 mA @ 850 MHz Output IP3 vs. Temperature 20 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz Collector Bias Voltage (Vcc) +8.0 Vdc RF Input Power (RFin)(Vcc = +7.2 Vdc) +17 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 16.86 mW/°C above 85 °C) 1.09 W Thermal Resistance (junction to lead) 59.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - SMT 5 Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC475ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC475ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H475 XXXX [2] H475 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 435 HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 110 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 8V 9V 10V 12V RBIAS VALUE 9.1 Ω 18 Ω 27 Ω 43 Ω RBIAS POWER RATING ¼W ½W ½W 1W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 5 - 436 50 900 1900 2200 2400 3500 4500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC475ST89 / 475ST89E v01.0107 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 116092 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1206 Pkg. L1 Inductor, 0603 Pkg. U1 HMC475ST89 / HMC475ST89E PCB [2] 107368 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 437