ICEMOS ICE60N130FP

Preliminary Data Sheet
ICE60N130FP
Product Summary
ICE60N130FP N-Channel
Enhancement Mode MOSFET
23A
Max
BVDSS @Tjmax ID=250uA 650V
Min
rDS(on)
VGS=10V 0.13Ω
Typ
Qg
VDS=480V 82nC
Typ
HALOGEN
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Optimized design for hard switching SMPS topologies
TA=25oC
ID
FREE
D
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b
, at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Value
Unit
Continuous drain current
ID
Tc=25oC
23
A
Pulsed drain current
ID, pulse
Tc=25oC
82
A
Avalanche energy, single pulse
E AS
ID=11.5A
690
mJ
Avalanche current, repetitive
I AR
limited by Tjmax
11.5
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=23A,
Tj=125oC
50.0
V/ns
Gate source voltage
VGS
Static
±20
AC (f>1Hz)
±30
Power dissipation
Ptot
Operating and storage temperature
Tj, Tstg
Mounting torque
Tc=25oC
35
-55 to +150
M 2.5 screws
50
V
W
o
C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-60N130FP-000-2
05/15/2013
1
Preliminary Data Sheet
ICE60N130FP
Parameter
Thermal characteristics
Thermal resistance, junctioncase a
Thermal resistance, junctionambient a
Symbol
Conditions
RthJC
Values
Min
Typ Max
-
-
Unit
2.5
o
RthJA
Soldering temperature, wave
T sold
soldering only allowed at leads
leaded
-
-
72
1.6mm (0.063in.) from
case for 10 s
-
-
260
C/W
o
C
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
Gate threshold voltage
V(BR)DSS
VGS=0 V, ID=250µA
600
650
-
VGS(th)
VDS=VGS, ID=250µA
VDS=600V, VGS=0V,
o
Tj=25 C
2.5
3
3.5
-
0.1
1
Zero gate voltage drain current IDSS
Gate source leakage current
IGSS
Drain-source
on-state resistance
RDS (on)
Gate resistance
RG
VDS=600V, VGS=0V,
o
Tj=150 C
V
µA
-
-
100
VGS=±20 V, VDS=0V
VGS=10V, ID=11.5A,
o
Tj=25 C
VGS=10V, ID=11.5A,
o
Tj=150 C
-
-
100
-
0.13
0.15
-
0.4
-
f=1 MHZ, open drain
-
4
-
Ω
pF
nA
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0 V, VDS=25 V,
f=1 MHz
-
2650
943
8
-
Output capacitance
Coss
VGS=0 V, VDS=100 V,
f=1 MHz
-
80
-
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
gfs
td(on)
tr
td(off)
tf
-
23
10
5
67
4.5
-
SP-60N130FP-000-2
05/15/2013
VDS>2*ID*RDS, ID=11.5A
VDS=380V, VGS=10V,
ID=23A,
RG=4Ω (External)
S
ns
2
Preliminary Data Sheet
ICE60N130FP
Parameter
Symbol
Conditions
Values
Unit
Min
Typ
Max
-
16
-
-
30
-
-
82
-
-
5.5
-
V
-
1.0
1.2
V
-
423
-
ns
-
8
-
µC
-
34
-
A
Gate charge characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
Gate plateau voltage
Vplateau
VDS=480 V, ID=23A,
VGS=10 V
nC
Reverse Diode
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irm
SP-60N130FP-000-2
05/15/2013
VGS=0V, IS=IF
VRR=480V, IS=IF,
diFIdt=100 A/µS
3
Preliminary Data Sheet
ICE60N130FP
Transfer Characteristics
Output Characteristics
80
80
VGS=10 to 7V
70
ID - Drain Current (A)
ID - Drain Current (A)
70
60
50
6V
40
30
5V
20
10
60
50
40
30
20
10
TJ = 150˚C
0
0
0
5
10
0
15
2
4
6
VGS - Gate-to-Source (V)
VDS - Drain-to-Source Voltage (V)
10
4.0
RDS(on) - On State Resistance
(Normalized)
RDS(on) - On-State Resistance (mΩ)
8
On Resistance vs Junction Temperature
On Resistance vs Drain Current
500
400
300
VGS = 10V
200
100
3.5
VGS = 10V
ID = 11.5A
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0
0
10
20
30
40
50
60
ID - Drain current (A)
70
80
-50
9
1.3
VGS(th) - Gate Threshold Voltage
(Normalized)
1.4
VDS = 480V
7
0
25
50
75
100
125
150
Gate Threshold Voltage vs Junction Temperature
10
8
-25
TJ - Junction Temperature (˚C)
Gate Charge
VGS - Gate-to-Source Voltage (V)
25˚C
ID = 23A
6
5
4
3
2
1
1.2
1.1
ID = 250μA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
0
20
40
60
Qg - Total Gate Charge (nC)
SP-60N130FP-000-2
05/15/2013
80
100
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (˚C)
4
Preliminary Data Sheet
ICE60N130FP
Capacitance
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
V(BR)DSS - Drain-to-Source Breakdown Voltage
(Normalized)
10000
C-Capacitance (pF)
Ciss
1000
Coss
100
10
Crss
1
0
100
200
300
400
500
VDS - Drain-to-Source Voltage (V)
1.1
ID = 1mA
1.0
0.9
0.8
-50
600
Maximum Rated Forward Biased Safe Operating Area
0
25
50
75
100
TJ - Junction Temperature (˚C)
125
150
Transient Thermal Response, Junction-to-Case
100
10
10us
100us
1
1ms
10ms
0.1
RDS(on) Limit
Package Limit
Thermal Limit
DC
0.01
r(t), Transient Thermal Resistance
(Normalized)
1.00
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
ID - Drain Current (A)
-25
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1
10
100
VDS - Drain-to-Source Voltage (V)
SP-60N130FP-000-2
05/15/2013
1000
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t - Time (seconds)
5
Preliminary Data Sheet
ICE60N130FP
SP-60N130FP-000-2
05/15/2013
6
Preliminary Data Sheet
ICE60N130FP
SYMBOL
E
E1
E2
A
A1
A2
A4
A5
c
D
Q
H1
E
ФP
L
L1
L2
ФP1
ФP2
ФP3
θ1
θ2
DEP
F1
F2
F3
F4
G
G1
G3
b1
b2
K1
R
MIN
9.63
9.94
9.36
4.30
2.34
0.43
2.51
0.33
15.67
12.78
2.83
7.70
1.4
1.15
SP-60N130FP-000-2
05/15/2013
3°
0.05
1.0
13.8
3.20
5.30
7.80
6.05
1.25
1.23
0.61
0.65
COMMON DIMENSIONS
MM
NOM
MAX
MIN
10.19
10.75
0.38
10.04
10.14
0.39
9.46
9.56
0.37
4.60
4.90
0.17
2.77
3.20
0.092
0.87
1.30
0.017
2.72
2.93
0.10
1.00REF
0.54
0.75
0.013
15.9
16.13
0.617
9.4REF
6.7REF
2.54BSC
3.18REF
13.25
13.72
0.50
3.25
3.67
0.11
7.80
7.90
0.30
1.5
1.6
0.055
1.2
1.25
0.045
3.45REF
5°
7°
3°
45°
0.10
0.15
0.002
1.50
2.0
0.039
13.90
14.0
0.543
3.30
3.40
0.126
5.40
5.50
0.209
8.00
8.20
0.307
6.58
7.10
0.238
1.35
1.45
0.049
1.31
1.38
0.048
0.78
0.94
0.024
0.70
0.75
0.026
0.50REF
INCH
NOM
0.40
0.40
0.37
0.18
0.11
0.03
0.11
0.39REF
0.021
0.626
0.370REF
0.264REF
0.100BSC
0.125REF
0.52
0.13
0.31
0.059
0.047
0.136REF
5°
45°
0.004
0.059
0.547
0.130
0.213
0.315
0.259
0.053
0.051
0.031
0.028
0.020REF
MAX
0.42
0.40
0.38
0.19
0.126
0.051
0.12
0.030
0.635
0.54
0.14
0.31
0.063
0.049
7°
0.006
0.079
0.551
0.134
0.217
0.323
0.280
0.057
0.054
0.037
0.030
7
Preliminary Data Sheet
ICE60N130FP
ICEMOS SUPERJUNCTION PATENT PORTFOLIO
ICEMOS GRANTED PATENTS
US7,429,772
US7,439,178
US7,446,018
US7,579,607
US7,723,172
US7,795,045
US7,846,821
US7,944,018
US8,012,806
US8,030,133
3D SEMI PATENTS LICENSED TO ICEMOS
US7,041,560B2
US7,023,069B2
US7,364,994
US7,227,197B2
US7,304,944B2
US7,052,982B2
US7,339,252
US7,410,891
US7,439,583
US7,227,197B2
US6,635,906
US6,936,867
US7,015,104
US9,109,110
US7,271,067
US7,354,818
US7,052,982,
US7,199,006B2
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.
SP-60N130FP-000-2
05/15/2013
8
Preliminary Data Sheet
ICE60N130FP
Marking Information
YY
= Last two digits of the year
WW = Work week calendar on Icemos
subcon assembly & test house
*
= Initial for Icemos subcon
assembly and test house
YYWW *
XXXX00
ICE60N130
XXXX = Wafer Lot ID
00
= may be used for wafer ID in a
special case.
= "00" is used unless specified.
ICE60N130 = ICE is Icemos logo and
60N130 is a designated device part
number
SP-60N130FP-000-2
05/15/2013
9