〈DIODE〉 MC981 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION OUTLINEDRAWING Unit：mm MC981 is a small type resin sealed silicon epitaxial type double diode. It is especially designed for high speed switching application. 4.0 3.0 7.5MAX Due to the small pin capacitance(2pieces), it is most suitable for high speed switching application and limited clipper application. 0.1 14.0 ● Small outline package for mounting ● Quick switching time 1.0 ● Small pin capacitance 13.0MIN 1.0 FEATURE 0.45 2.5 2.5 0.4 ● Good two elements characteristics 2.5 APPLICATION ① ② ③ For high speed switching of audio machine, VTR. JEITA：－ JEDEC：－ TERMINAL CONNECTER ①：ANODE 1 ②：CATHODE1+ ANODE 2 ③：CATHODE 2 MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VRM Peak reverse voltage 75 V VR DC reverse voltage 50 V Surge current（１μｓ） 4 A Peak forward current 300 mA Average rectification current 100 mA PT Total allowance dissipation 450 mW Tｊ Junction temperature ＋125 ℃ Tstg Storage temperature -55～＋125 ℃ I FSM I FM I O INTERNAL CONNECTION D1 MARKING D2 M81 Type Name LOT No ① ② ① ③ ② ③ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Forward voltage Symbol Limits Min Typ Max Uniit VF1 I F=10mA - 0.68 0.9 VF2 I F=50mA - 0.82 1.0 I F=100mA - 0.92 1.2 VR=50V - - 0.1 μA VF3 Reverse current Test conditions IR V Pin capacitance Cｔ VR=0V，f=1MHz - 1.2 4.0 pF Reverse recovery time trr (Refer to test circuit) - － 4.0 ns ISAHAYA ELECTRONICS CORPORATION 〈DIODE〉 MC981 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) REVERSE RECOVERY TIME(trr)TEST CIRCUIT TRIGGER 0.02μF VF SAMPLING OSCILLOSCOPE (Zin=50Ω) PULSE GENERATER （Zout=50Ω) DC POWER SUPPLY ●INPUT VOLTAGE WAVE FORM D.U.T 0 VR ＩF=10mA, VR=6V RL=50Ω trr=0.1Ir REVERSE RECOVERY TIME FOR 0.1Ir + 3kΩ - ●CURRENT WAVE FORM IN DIODE IF 0 Ir 0.1Ir trr TYPICAL CHARACTERISTICS（Ta=25℃） REVERSE CURRENT VS. REVERSE VOLTAGE FORWARD CURRENT VS. FORWARD VOLTAGE 100 REVERSE CURRENT IR （nA） FORWARD CURRENT IF (mA) 100 10 1 10 1 0.1 0.1 0.2 0.4 0.6 0.8 1 0 1.2 10 30 40 50 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE VF (V) REVERSE RECOVERY TIME VS. FORWARD CURRENT PIN CAPACITANCE VS. REVERSE VOLTAGE 10 REVERSE RECOVERY TIME Trr (ns) 10 PIN CAPACITANCE Ct (pF) 20 1 8 6 4 2 0 0.1 1 10 REVERSE VOLTAGE VR (V) 100 0 20 40 60 FORWARD CURRENT IF(mA) ISAHAYA ELECTRONICS CORPORATION 80 100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Aug.2013