ISAHAYA INC5006AC1

INC5006AC1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
INC5006AC1 is a silicon NPN epitaxial type transistor.
・High collector current(IC=3A)
0.95
2.8
1.90
・Super mini package for easy mounting
①
0.95
FEATURE
②
1.5
0.65
0.4
0.65
It is designed with high collector current and small VCE(sat).
UNIT:mm
2.8
③
・Low collector saturation voltage
0.13
APPLICATION
0.8
1.1
(VCE(sat)<0.2Vmax;IC=3A、IB=20mA)
0~0.1
Switching, Small type motor drive
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
VCEO
Collector to Emitter voltage
50
V
VCBO
Collector to Base voltage
100
V
VEBO
Emitter to Base voltage
7
V
Collector current
3
A
I
C
PC
Collector dissipation(Ta=25℃)
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
CEK
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I C=10mA,I B=0mA
I C=100μA,I E=0mA
I E=100μA,I C=0mA
VCB=100V,I E =0mA
VEB=7V,I C=0mA
VCE=2V,I C=300mA
VCE=2V,I C=1A
I C=1A,I B=20mA
I C=1A,I B=20mA
VCE=2V,I E=-300mA,f=100MHz
VCB=10V,f=1MHz
ISAHAYA ELECTRONICS CORPORATION
MIN
50
100
7
400
200
-
LIMITS
TYP
MAX
0.1
0.1
1000
0.14
1.1
250
13
-
UNIT
V
V
V
μA
μA
V
V
MHz
pF
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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mishap.
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Mar.2013