ISAHAYA 2SA1365_10

〈SMALL-SIGNAL TRANSISTOR〉
2SA1365
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SA1235 is a super mini silicon NPN epitaxial type
transistor designed with high collector current,small Vce(sat).
Complementary with 2SC3440.
.
FEATURE
●Low collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting.
●High collector current ICM=-1A
●High gain band width product
fT=180MHz typ
JEITA:SC-59
JEDEC:Similar to TO-236
APPLICATION
Small type motor drive, relay drive, power supply.
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-25
V
VEBO
Emitter to Base voltage
-4
V
VCEO
Collector to Emitter voltage
-20
V
I
Peak Collector current
-1
A
Collector current
-700
mA
PC
Collector dissipation (Ta=25℃)
200
※350
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55~+125
℃
CM
I
C
Note)
The dimension without tolerance represent central value.
※package mounted on substrate.
hFE ITEM
TYPE NAME
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=-10μA , I E=0
-25
-
-
V
E to B break down voltage
V(BR)EBO
I E=-10μA , I C=0
-4
-
-
V
C to E break down voltage
V(BR)CEO
I C=-100μA ,R
-20
-
-
V
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB=-2V, I C=0
hFE
V
CE
DC forward current gain
C to E Saturation Vlotage
VCE(sat)
Gain band width product
fT
BE
=∞
=-25V, I E=0
=-4V, I C=-100mA
I C=-500mA ,IB=-25mA
V
CE
=-6V, I E=10mA
※) It shows hFE classification in below table
Marking
hFE
AE
150 to 300
AF
250 to 500
AG
400 to 800
.
ISAHAYA ELECTRONICS CORPORATION
-
-
-1
μA
-
-
-1
μA
150
-
800
-
-0.2
-0.5
V
100
180
-
MHz
〈SMALL-SIGNAL TRANSISTOR〉
2SA1365
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Aug.2010