〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) DESCRIPTION OUTLINEDRAWING Unit：ｍｍ RT3DKAM is a super mini package plastic seal type silicon epitaxial type composite diode, built with Anode common MC2836 and Cathode common MC2838. Due to the small pin capacitance, short switching time(reverse recovery time),It is most suitable for high speed switching application and limitter,clipper application. FEATURE ● Small pin capacitance ● Quick switching time ●High voltage ● Quadruple diodes and super mini package for mounting APPLICATION For general high speed switching of audio machine,VCR. Equivalent circuit JEITA：SC-88 JEDEC：－ MC2836 MC2838 MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VRM Peak reverse voltage 85 V VR DC reverse voltage 80 V I FSM I FM I O Parameter 4 A Peak forward current Surge current（１μｓ） 300 mA Average rectification current 100 mA PT Total allowance dissipation(Ta=25℃) 200 mW Tｊ Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING ⑥ ⑤ ④ DKA ● Type Name ① ② ISAHAYA ELECTRONICS CORPORATION ③ 〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) ELECTRICAL CHARACTERISTICS MC2836 Parameter Forward voltage （Ta=25℃） Symbol Test conditions Limits Min Typ Max VF1 I F=10mA - 0.77 0.9 VF2 I F=50mA - 090 1.0 Uniit V VF3 I F=100mA - 0.95 1.2 IR1 VR=75V - - 0.1 IR2 VR=80V - - 0.5 Pin capacitance Cｔ VR=0V，f=1MHz - 2.8 4.0 pF Reverse recovery time trr (Refer to test circuit) - － 4.0 ns Reverse current ELECTRICAL CHARACTERISTICS MC2838 Parameter μA （Ta=25℃） Symbol Test conditions Limits Min Typ Max - 0.72 0.9 Uniit VF1 I F=10mA VF2 I F=50mA - 085 1.0 VF3 I F=100mA - 0.90 1.2 IR1 VR=75V - - 0.1 IR2 VR=80V - - 0.5 Pin capacitance Cｔ VR=0V，f=1MHz - 1.3 4.0 pF Reverse recovery time trr (Refer to test circuit) - － 3.0 ns Forward voltage Reverse current ISAHAYA ELECTRONICS CORPORATION V μA 〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) MC2836 Reverse recovery time (trr) test circuit ● INPUT VOLTAGE WAVE FORM 0.02μF TRIGGER D.U.T PULSE GENERATER SAMPLING (Zout=50Ω） OSCILLOSCOPE VF 0 VR （Zin=50Ω） IF=10mA,VR=6V 3kΩ DC POWER RL=50Ω ●CURRENT WAVE FORM IN DIODE trr=0.1lr REVERSE RECOVERY + SUPPLY IF TIME FOR 0.1 Ir - 0 Ir 0.1lr trr MC2836 TYPACAL CHARACTERISTICS ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) MC2838 Reverse recovery time (trr) test circuit ● INPUT VOLTAGE WAVE FORM 0.02μF TRIGGER D.U.T PULSE GENERATER SAMPLING (Zout=50Ω） OSCILLOSCOPE VF 0 VR （Zin=50Ω） IF=10mA,VR=6V 3kΩ DC POWER RL=50Ω ●CURRENT WAVE FORM IN DIODE trr=0.1lr REVERSE RECOVERY + SUPPLY IF TIME FOR 0.1 Ir - 0 Ir 0.1lr trr MC2838 TYPACAL CHARACTERISTICS ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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