〈SMALL-SIGNAL TRANSISTOR〉 RT1A3906-T122 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) DESCRIPTION OUTLINEDRAWING unit：ｍｍ RT1A3906 is a super mini package resin sealed 2.5 silicon PNP epitaxial transistor, 0.5 0.5 1.5 ●Super mini package for easy mounting 2 0.4 0.95 2.9 ●Excellent linearity of DC forward gain. 1 1.90 FEATURE 0.95 It is designed for low frequency voltage application. 3 ● Small collector to emitter saturation voltage. 0.16 APPLICATION 0.8 1.1 VCE(sat)=-0.4Vmax（@IC=-50mA、IB=-5mA） For Hybrid IC,small type machine low frequency voltage 0∼0.1 Terminal connection ①：Base ②：Emitter ③：Collector Amplify application. JEITA：SC-59 JEDEC ： TO-236resemble MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VCBO Collector to Base voltage -60 V VCEO Collector to Emitter voltage -40 V VEBO Emitter to Base voltage -6 V Collector current 200 mA I Parameter C Pc Collector dissipation 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ Marking Figure ２ Ｗ hFE Item Abbreviation for Kind ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Parameter Test conditions Limits Min Min Min Unit V(BR)CEO C t o E b r e a k d o w n v o l t a g e Ic=-1mA,RBE=∞ -40 V V(BR)CBO C t o B b r e a k d o w n v o l t a g e Ic=-10μA,IE=0 -60 V V(BR)EBO E t o B d o w n -6 b r e a k IBL B a s e ICEX C o l l e c t o r ｈFE D C c u t o f f c u t f o r w a r d o f f C t o E S a t u r a t i o n V BE (sat) B t o E S a t u r a t i o n G a i n Cob C o l l e c t o r IE =-10μA,IC=0 VCE=-30V,VEB=-3V -50 nA c u r r e n t VCE=-30V,VEB=-3V -50 nA b a n d w i d t h o u t p u t V VCE=-1V,IC=-10mA 100 300 V o l t a g e Ic=-50mA,I B=-5mA − -400 V o l t a g e Ic=-50mA,I B=-5mA − -950 mV VCE=-20V, I C=-10mA ,f=100MHz 250 − MHz VCB=-5V,IE=0,f=1MHz − 5.0 pF c u r r e n t V CE (sat) ｆT v o l t a g e c u r r e n t g a i n p r o d u c t c a p a c i t a n c e ISAHAYA ELECTRONICS CORPORATION mV RT1A3906-T122 COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT -50 -60 Ta=25℃ COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) -70 -250μA -50 -40 -200μA -30 -150μA -20 -100μA -10 Ta=25℃ VCE=-1V -40 -30 -20 -10 IB=-50μA 0 -0 -00 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 -0 0 -0.0 0 -1000 1000 Ta=25℃ VCE=-1V C TO E SATURATION VOLTAGE VCE(sat)(mV) DC FORWARD CURRENT GAIN hFE -1.0 COLLECTOR EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 100 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) Ta=25℃ IC/IB=10 -100 -10 -0.1 -100 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT -1 -10 COLLECTOR CURRENT IC(mA) -100 COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE 10 1000 COLLECTOR OUTPUT CAPACITANCE Cob(pF) GAIN BAND WIDTH PRODUCT fT(MHz) -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) Ta=25℃ VCE=-20V 100 10 1 10 EMITTER CURRENT IE(mA) 100 Ta=25℃ IE=0 f=1MHz 1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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