ITC137P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance (max) Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mArms / mADC V mA - Features • 3750Vrms Input/Output Isolation • FCC Compatible Part 68 • Full-Wave Bridge Rectifier • Darlington Transistor for Electronic Inductor “Dry” Circuits • Full Wave Current Detector for Ring Signal or Loop Current Detect • 2mW Hook Switch Drive Power (Logic Compatible) • Includes Zener Diodes • Small 16-Pin SOIC Package (PCMCIA Compatible) • Board Space and Cost Savings • No Moving Parts • JEDEC Standard Pin Out Applications • Data/Fax Modem • Voice Mail Systems • Telephone Sets • Computer Telephony Integration • Set Top Box Modems Description This Integrated Telecom Circuit combines a single-pole, normally open (1-Form-A) solid state relay, a bridge rectifier, a Darlington transistor, an optocoupler, and three Zener diodes into one 16-pin SOIC package, consolidating designs and reducing component count in telecom applications. The ITC137’s optocoupler provides for full-wave detection of ringing signals. Approvals • UL Recognized Component: File E76270 • CSA Certified Component: Certificate 1305490 • EN/IEC 60950-1 Certified Component: TUV Certificate: B 09 07 49410 006 Ordering Information Part # ITC137P ITC137PTR Description 16-Pin SOIC (50/Tube) 16-Pin SOIC (1000/Reel) Pin Configuration ITC137P (N/C) – LED - Form A Relay – LED - Form A Relay + Zener Diode (cathode) – Zener Diode (anode) + Zener Diode (cathode) Collector - Phototransistor Emitter - Phototransistor 1 16 2 15 PV 3 14 4 13 5 12 6 11 7 10 ** 8 ** 9 Output Form A Output Form A/Bridge Input –/+ Darlington Base Darlington Emitter Bridge Output +/Darlington Collector/ + Zener Diode (cathode) Bridge Output –/– Zener Diode (anode) LED - Phototransistor –/+ LED - Phototransistor +/– Denotes full-wave detection Switching Characteristics of Normally Open Devices Form-A IF 90% 10% ILOAD ton Pb DS-ITC137P-R05 toff e3 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION ITC137P Absolute Maximum Ratings @ 25ºC Parameter Input Control Current, Relay Input Control Current, Detector Total Package Dissipation 1 Isolation Voltage, Input to Output Operational Temperature Storage Temperature 1 Ratings 50 100 1 3750 -40 to +85 -40 to +125 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Units mA mA W Vrms °C °C Derate linearly 8.33 mW / ºC Total Power Dissipation (PD): PD=PHOOKSWITCH + PBRIDGE + PDARLINGTON + PLED PD=(RDS(on)) (I2L) + 2(VF)(IL) + (VCE)(IL) + (VLED)(IF) WHERE: RDS(on) = Maximum relay on resistance IL = Maximum loop current VF = Maximum diode forward voltage VCE = Maximum voltage collector to emitter VLED = Maximum LED forward voltage IF = Maximum LED current Electrical Characteristics @ 25ºC Parameter Output Characteristics Blocking Voltage (Peak) Load Current Continuous Peak On-Resistance Off-State Leakage Current Switching Speeds Turn-On Turn-Off Output Capacitance Input Characteristics Input Control Current to Activate Input Voltage Drop Reverse Input Voltage Reverse Input Current Conditions Symbol Min Typ Max Units - VL - - 350 VP t=10ms IL=120mA VL=350V, TJ=25ºC IL ILPK RON ILEAK - - 120 400 15 1 mArms / mADC mAP VL=50V, f=1MHz ton toff COUT - 25 3 3 - ms ms pF IL=120mA IF=5mA VR=5V IF VF VR IR 0.9 - 1.2 - 5 1.4 5 10 mA V V A IF=5mA, VL=10V A Electrical Characteristics @25ºC: Darlington Transistor Section Parameter Collector-Emitter Voltage Collector Current, Continuous Power Dissipation Off-State Collector-Emitter Leakage Current DC Current Gain Saturation Voltage Total Harmonic Distortion 2 Conditions IC=10mADC, IB=0mA VC=3.5V VCE=10V, IB=0mA VCE=10VDC, IC=120mA IC=120mA IC=40mA, fO=300Hz @ -10dBm Symbol VCEO IC PD ICEX hFE VCE(sat) - www.ixysic.com Min 40 10,000 - Typ - Max 120 500 1 1.5 -80 Units V mA mW A V dB R05 INTEGRATED CIRCUITS DIVISION ITC137P Electrical Characteristics @25ºC: Detector Section Parameter Output Characteristics Phototransistor Blocking Voltage Phototransistor Dark Current Saturation Voltage Current Transfer Ratio Input Characteristics Input Control Current Input Voltage Drop Input Current (Detector Must be Off) Conditions Symbol Min Typ Max Units IC=10A VCE=5V, IF=0mA IF=16mA , IC=2mA IF=6mA, VCE=0.5V BVCEO ICEO VSAT CTR 20 33 50 50 0.3 400 500 0.5 - V nA V % IC=2mA, VCE=0.5V IF=5mA IC=1A, VCE=5V IF VF IF 0.9 5 2 1.2 25 6 1.4 - mA V A Units V V Electrical Characteristics @25ºC (Unless Otherwise Noted): Bridge Rectifier Section Parameter Reverse Voltage Forward Voltage Drop Reverse Leakage Current Conditions IFD=120mA TJ=25ºC, VR=100V TJ=85ºC Forward Current Continuous Peak Symbol VRD VFD IRD Min - Typ - Max 100 1.5 10 50 IFD - - 140 500 mA Symbol VZ VZ CI/O VI/O Min 3750 Typ 4.3 15 3 - Max - Units V V pF Vrms t=10ms A Electrical Characteristics @25ºC: Zener Diodes Parameter Zener Voltage Between Pins 4&5 and Pins 6&5 Zener Voltage Between Pins 12&11 Input to Output Capacitance Input to Output Isolation Conditions IZT=20mA IZT=20mA - EXAMPLE CIRCUIT VCC 1 680 16 2 4.7F + 15 COUPLING TRANSFORMER TIP 10 MOSFET A DRIVER 3 OFF-HOOK CPU CIRCUIT 14 RING 4 13 5 12 15 B A VCC 10F 6 15V 51k RL 300V SURGE PROTECTION TELEPHONE LINE 25k 4.7F + 11 B 7 8 10 RING 9 18Vx 2 DIGITAL GROUND R05 0.47F 250V 8.2k ISOLATED GROUND www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION ITC137P DEVICE PERFORMANCE DATA* 25 20 15 10 5 0 1.17 1.19 1.21 1.23 1.6 1.4 IF=50mA IF=30mA IF=20mA IF=10mA IF=5mA 1.2 1.0 0.8 -40 1.25 -20 0 20 40 60 80 100 Power Dissipation (W) Device Count (N) 30 Package Power Derating 1.8 LED Forward Voltage Drop (V) 35 Typical LED Forward Voltage Drop vs. Temperature Typical LED Forward Voltage Drop (N=50, IF=5mA, TA=25ºC) 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Operating Area 0.65 0.60 0.55 0.50 25 30 35 40 45 50 55 60 65 70 75 80 85 120 Temperature (ºC) LED Forward Voltage Drop (V) Temperature (ºC) RELAY PERFORMANCE DATA* 15 10 5 0 1.23 1.58 1.93 2.28 2.63 Typical On-Resistance Distribution (N=50, IL=120mADC, TA=25ºC) 30 20 15 10 5 2.98 25 20 15 10 5 0 0.06 0.10 0.14 0.18 0.22 0.26 8.75 0.30 9.25 9.75 10.25 10.75 Turn-On Time (ms) Turn-Off Time (ms) On-Resistance (:) Typical IF for Switch Operation (N=50, IL=120mADC, TA=25ºC) Typical IF for Switch Dropout (N=50, IL=120mADC, TA=25ºC) Typical Blocking Voltage Distribution (N=50, TA=25ºC) 25 15 10 5 0 30 20 15 10 5 0.42 0.54 0.66 0.78 LED Current (mA) 0.90 1.02 25 20 15 10 5 0 0.30 35 Device Count (N) 20 Device Count (N) Device Count (N) 35 0 0.88 25 Typical Turn-Off Time (N=50, IF=2mA, IL=120mADC, TA=25ºC) Device Count (N) 20 25 Device Count (N) Device Count (N) 25 Typical Turn-On Time (N=50, IF=2mA, IL=120mADC, TA=25ºC) 0 0.18 0.30 0.42 0.54 0.66 LED Current (mA) 0.78 0.90 365 375 385 395 405 415 425 Blocking Voltage (VP) * The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. 4 www.ixysic.com R05 INTEGRATED CIRCUITS DIVISION ITC137P Typical Turn-On Time vs. LED Forward Current (IL=120mADC) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 On-Resistance (:) Turn-Off Time (ms) 0.12 0.10 0.08 40 30 20 10 15 20 25 30 35 40 45 50 0 10 15 20 25 30 35 40 45 40 60 80 Typical Turn-Off Time vs. Temperature (IF=5mA, IL=120mADC) Load Current vs. Ambient Temperature (IF=5mA) 0.30 0.25 0.20 0.15 0.10 0.05 0 0 -40 -20 0 20 40 60 80 100 75 50 25 0 -40 Temperature (ºC) 25 Temperature (ºC) Typical IF for Switch Operation vs. Temperature (IL=120mADC) Typical IF for Switch Dropout vs. Temperature (IL=120mADC) Load Current vs. Load Voltage (IF=5mA, TA=25ºC) 20 40 60 80 100 1.8 1.4 1.4 LED Current (mA) 1.6 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.4 0.2 0 0 0 20 40 60 80 -20 0 20 40 60 80 Temperature (ºC) Typical Blocking Voltage vs. Temperature Typical Leakage vs. Temperature Measured Across Pins 15&16 410 Leakage (PA) 405 400 395 390 385 380 -20 0 20 40 60 Temperature (ºC) 80 100 85 100 50 0 -50 -100 -200 -2.0 -1.5 100 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Load Voltage (V) Temperature (ºC) 415 50 -150 -40 100 0 150 1.2 0.2 -20 200 Load Current (mA) 0 100 100 Temperature (ºC) -20 1.6 -40 20 Typical Turn-On Time vs. Temperature (IL=120mADC) 0.5 -40 0 Temperature (ºC) 1.0 1.8 -20 LED Forward Current (mA) 1.5 -40 -40 50 Percent Maximum Load Rating (%) 2.0 5 LED Forward Current (mA) IF=5mA IF=10mA IF=20mA 2.5 0 Energy Rating Curve 1.2 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1.0 Load Current (A) Turn-On Time (ms) 50 0.04 10 3.0 LED Current (mA) 0.14 0.06 5 Typical On-Resistance vs. Temperature (IF=5mA, IL=120mADC) 60 0.16 0 Blocking Voltage (VP) Typical Turn-Off Time vs LED Forward Current (IL=120mADC) 0.18 Turn-Off Time (ms) Turn-On Time (ms) RELAY PERFORMANCE DATA (cont)* 0.8 0.6 0.4 0.2 -40 -20 0 20 40 60 Temperature (ºC) 80 100 0 10Ps 100Ps 1ms 10ms 100ms 1s 10s 100s Time *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R05 www.ixysic.com 5 INTEGRATED CIRCUITS DIVISION ITC137P PHOTOTRANSISTOR PERFORMANCE DATA* 20 16 12 8 4 0 8 4.5 7 4.0 6 5 4 IF=1mA IF=2mA IF=5mA IF=10mA IF=15mA IF=20mA 3 2 1 0 1 2 3 4 5 6 9 7 8 Collector Emitter Voltage 0 10 Normalized CTR (%) IF=10mA IF=5mA IF=2mA IF=1mA Normalized CTR (%) Collector Current (mA) 28 24 Single Transistor Typical Normalized CTR vs. IF (VCE=0.5V) Single Transistor Typical Normalized CTR vs. Temperature (VCE=0.5V) Typical Transfer Characteristics of Single Transistor Detector -40 -20 0 20 40 60 80 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 120 2 4 6 8 10 12 14 16 18 20 Forward Current (mA) Temperature (ºC) Single Transistor Typical IC vs. IF (VCE=0.5V) Collector Current (mA) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Forward Current (mA) DARLINGTON PERFORMANCE DATA* Darlington Transistor Typical Normalized CTR vs. IF (VCE=0.8V) Darlington Transistor Typical IC vs. IF (VCE=0.5V) 2.5 3.0 2.0 2.5 12 10 8 6 4 Normalized CTR (%) 14 Normalized CTR (%) Collector Current (mA) 16 Darlington Transistor Typical Normalized CTR vs. Temperature (VCE=0.8V) 1.5 1.0 0.5 2 0 2 4 6 8 10 12 14 16 18 20 0 2 4 Forward Current (mA) 6 8 10 12 1.5 1.0 0.5 14 16 18 20 -40 -20 Forward Current (mA) Typical Transfer Characteristics of Darlington Transistor 0 20 40 60 80 100 Temperature (ºC) V-I Characteristics for Test Circuit 10 120 100 Ib=10PA 80 Ib=8PA 60 Ib=6PA 40 Ib=4PA 6 20 Ib=2PA 5 9 VIN (Volts) Collector Current (mA) 2.0 0 0 0 IF=1mA IF=2mA IF=5mA IF=10mA IF=15mA IF=20mA 8 7 4 0 2 4 6 8 Collector Emitter Voltage 10 20 40 60 80 100 120 IOUT (mA) * The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. 6 www.ixysic.com R05 INTEGRATED CIRCUITS DIVISION ITC137P Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating ITC137P MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time ITC137P 260ºC for 30 seconds Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. Pb R05 e3 www.ixysic.com 7 INTEGRATED CIRCUITS DIVISION ITC137P MECHANICAL DIMENSIONS ITC117P 10.160±0.381 (0.400±0.015) PCB Land Pattern 0.254 ±0.0127 (0.010±0.0005) PIN 16 10.363±0.127 (0.408±0.005) 7.493±0.127 (0.295±0.005) 0.635 X 45° (0.025 X 45°) 1.016 TYP (0.040 TYP) 9.30 (0.366) 1.90 (0.075) PIN 1 1.270 TYP (0.050 TYP) 1.27 (0.050) 2.108 MAX (0.083 MAX) See Note 3 0.406 TYP (0.016 TYP) 8.890 TYP (0.350 TYP) 0.508±0.1016 (0.020±0.004) 0.60 (0.024) Lead to Package Standoff: MIN: 0.0254 (0.001) MAX: 0.102 (0.004) DIMENSIONS mm (inches) NOTES: 1. Coplanarity = 0.1016 (0.004) max. 2. Leadframe thickness does not include solder plating (1000 microinch maximum). 3. Sum of package height, standoff, and coplanarity does not exceed 2.108 (0.083). ITC117PTR Tape & Reel 330.2 DIA. (13.00 DIA.) W=16 (0.630) Top Cover Tape Thickness 0.102 MAX. (0.004 MAX.) B0=10.70 (0.421) K0=3.20 (0.126) A0=10.90 (0.429) P=12.00 (0.472) K1=2.70 (0.106) Embossed Carrier Embossment NOTES: 1. All dimensions carry tolerances of EIA Standard 481-2 2. The tape complies with all “Notes” for constant dimensions listed on page 5 of EIA-481-2 Dimensions mm (inches) For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 8 Specification: DS-ITC137P-R05 ©Copyright 2012, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 12/19/2012