IXYS MMA-283136-R5

MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Features:








32
Frequency Range: 28 - 31 GHz
P1dB: +36 dBm
IM3 Level: -35 dBc @Po=26dBm/tone
Gain: 22 dB
Vdd = 5 to 6V
Idsq = 1200 to 3000mA
Input and Output Fully Matched to 50 Ω
Integrated Output Power Detector
30
29
28
27
26
25
1
24
10K
2
23
3
22
1.5K
4
21
5
20
6
Applications:



31
19
10K
7
P2P Radio
V-sat
Military
18
8
17
9
10
11
12
13
14
15
16
Functional Block Diagram
Description:
The MMIC is a high power amplifier MMIC in a surface mount package designed for use in transmitters that
operate at frequencies between 28GHz and 31GHz. In the operational frequency band, it provides 36dBm of
output power (P-3dB) and 22dB of small-signal gain. This MMIC is also optimized for high linearity
applications. This MMIC provides IM3 level of -35dBc at Pout=26dBm/tone when biased under Vds=5V,
Idsq=3000mA.
Absolute Maximum Ratings:
SYMBOL PARAMETERS
(Ta= 25 C)*
UNITS
Min.
Max.
Vds
Drain-Source Voltage
V
6.5
Vg
Gate-Source Voltage
V
-2.1
0
Ig
First Gate Current
mA
-17
17
Pd
Power Dissipation
W
24
Pin max
RF Input Power
dBm
20
Tch
Channel Temperature
ºC
+150
Tstg
Storage Temperature
ºC
-55 to +150
Tmax
Max. Assembly Temp (20 sec max)
ºC
+250
*Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 1 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Electrical Specifications:
Vds=6V, Vgs=-0.85V, Idsq=2000mA, Ta=25 C Z0=50 ohm
Parameter
Units
Typical Data
Frequency Range
Gain (Typ / Min)
Gain Flatness (Typ / Max)
Input RL(Typ/Max)
Output RL(Typ/Max)
Output P1dB(Typ/Min)
Output P3dB(Typ/Min)
IM3 Level (1)
Thermal Resistance
Operating Current at P1dB(Typ /
Max)
GHz
dB
+/-dB
dB
dB
dBm
dBm
dBc
⁰C/W
28-31
22 / 20
2.5 / 3
10/8
10/8
35/34
36/35
-40
3.8
mA
2500 / 3000
(1) Output IP3 is measured with two tones at output power of 20 dBm/tone separated by 20 MHz.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 2 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Typical RF Performance:
Vds=6V, Vgsq=-0.85V, Idsq=2000mA, Z0=50 ohm, Ta=25 ºC
30
DB(|S(1,1)|)
MEAS
25
DB(|S(2,1)|)
MEAS
DB(|S(2,2)|)
MEAS
S11, S21, and S22 (dB)
20
15
10
5
0
-5
-10
-15
-20
20
22
24
26
28
30
32
Frequency (GHz)
34
36
S11, S21, and S22 vs. Frequency
P-1 and P-3 vs. Frequency
38
40
IM3 level [dBc] vs. Output power/tone [dBm]
Po(dBm), and Ids(mA) vs. Pin(dBm)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 3 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Typical Bias dependent RF Performance: Vds=4V
Bias dependent P1 vs. Frequency
@Vds=4V, Idsq=2.8A
Bias dependent P-3 vs. Frequency
@Vds=4V, Idsq=2.2A
@Vds=4V, Idsq=2.2A
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 4 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Typical Bias dependent RF Performance: Vds=5V
Bias dependent P1 vs. Frequency
@Vds=5V, Idsq=3A
Bias dependent P-3 vs. Frequency
@Vds=5V, Idsq=2.6A
@Vds=5V, Idsq=1.5A
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 5 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Typical Bias dependent RF Performance: Vds=6V
Bias dependent P1 vs. Frequency
@Vds=6V, Idsq=2.5A
Bias dependent P-3 vs. Frequency
@Vds=6V, Idsq=2A
@Vds=6V, Idsq=1.5A
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 6 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
S11 (dB)
Typical Over Temperature Performance: Vds=6V, Ids=2000mA, Z0=50 ohm, Ta=-40, 25, and 85 ºC
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
DB(|S(2,1)|)
MEAS_25C
DB(|S(2,1)|)
MEAS_85C
DB(|S(2,1)|)
MEAS_n40C
20
22
24
26
P1 over temperature
28
30
32
Frequency (GHz)
34
36
38
40
34
36
38
40
34
36
38
40
S21(dB)
0
S11 (dB)
-5
-10
DB(|S(1,1)|)
MEAS_25C
-15
DB(|S(1,1)|)
MEAS_85C
DB(|S(1,1)|)
MEAS_n40C
-20
20
22
24
26
P-3 over temperature
28
30
32
Frequency (GHz)
S11(dB)
100
0
80
S22 (dB)
Stability (K)
-5
60
K()
MEAS_25C
40
K()
MEAS_85C
20
-10
DB(|S(2,2)|)
MEAS_25C
-15
DB(|S(2,2)|)
MEAS_85C
K()
MEAS_n40C
DB(|S(2,2)|)
MEAS_n40C
0
-20
0
5
10
15
20
25
30
Frequency (GHz)
35
K-factor vs. Frequency
40
45
50
20
22
24
26
28
30
32
Frequency (GHz)
S22(dB)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 7 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Applications
The MMA283136 MMIC power amplifier is designed for use as a power stage amplifier in microwave
transmitters. It is ideally suited for 28 to 31GHz band V-sat transmitter applications requiring excellent saturated
output power and linearity performance. This amplifier is provided as a 5x5mm QFN package, and the packaged
amplifier is fully compatible with industry standard high volume surface mount PCB assembly processes.
Biasing and Operation
The recommended bias conditions for best performance for high power applications the MMA283136 are VDD =
6.0V, Idsq = 2000mA. Performance improvements are possible depending on applications. For high linearity
requirement at higher output power up to 27dBm/tone, recommended bias conditions are Vdd=5V,
Idsq=3000mA. The drain bias voltage range is 5 to 6V and the quiescent drain current biasing range is 1200mA
to 3000mA. A single DC gate supply connected to Vg will bias all the amplifier stages. Muting can be
accomplished by setting Vg to the pinch-off voltage (Vp=-1.8V). The gate voltage (Vg) should be applied prior to
the drain voltages (Vd1, Vd2, Vd3, and Vd4) during power up and removed after the drain voltages during power
down. The RF input and output ports are DC decoupled internally. Typical DC supply connection with bi-passing
capacitors for the MMA283136 is shown in following pages.
Assembly Techniques
GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage,
handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are
critical factors in successful GaAs MMIC performance and reliability.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 8 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Package Pin-out:
Pin
4
21
10
31
29
28
15, 26
18
23
1, 3, 5, 8 ,9, 16, 17, 20, 22,
24, 25, 32, 33
2, 6, 7, 11, 12, 13, 14, 19,
27, 30
Description
RF Input
RF Output
Vg
Vd1
Vd2
Vd3
Vd4
DET_Reference
DET_Output
Ground
N/C
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 9 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Mechanical Information:
The units are in [mm].
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 10 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Application Circuit:
Vd1
Vd2 Vd3
1uF
1uF
Vd4
DET_O
1uF
1uF
10Ω
10Ω
10Ω
10Ω
0.01u
0.01u
0.01u
RF Input
GND
RF IN
GND
0.01u
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
RF Output
GND
RF OUT
GND
10Ω
Note:
Vd4 pins must be biased
from both sides.
Note:
Vd4 pins is able to supply
either side.
10Ω
0.01u
10Ω
0.01u
0.01u
1uF
1uF
Vg1
Vd4
DET_R
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 11 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Recommended Application Board Design:
Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads.
Board is soldered on a gold plated solid cupper block and adequate heat-sinking is required for 16.8W total
power dissipation.
Part
C1, C2, C3, C4, C5, C6
C7, C8, C9, C10, C11, C12
R1, R2, R3, R4, R5, R6
Description
1uF capacitor (0603)
0.01uF Capacitor (0402)
10Ω Resistor (0402)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 12 of 13
MMA-283136-R5
28-31GHz 4W MMIC Power Amplifier
Data Sheet
October, 2012
Recommended Application Board Design:
Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads. The board material and
mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An
electronic drawing of the land pattern is available upon request from MwT Sales & Application Engineering.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 13 of 13