TRIQUINT TGA4539-SM

TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Applications
•
•
•
Point-to-Point Radio
Ka-Band VSAT Ground Terminal
Point-to-Multipoint Communications
QFN 5x5 mm 20L
Product Features
•
•
•
•
•
Functional Block Diagram
Frequency Range: 28 – 30 GHz
Power: 30.5 dBm Psat,, 30 dBm P1dB
Gain: 20 dB
Bias: Vd = 6 V, Idq = 420 mA, Vg = -0.59 V
Typical
Package Dimensions: 5.0 x 5.0 x 1.3 mm
20 19 18 17 16
1
15
2
14
3
13
4
12
5
11
6
General Description
7
8
9
10
Pin Configuration
The TriQuint TGA4539-SM is a Ka-Band
Band 1 Watt Power
Amplifier. The TGA4539-SM operates from 28 – 30
GHzz and is designed using TriQuint’s power pHEMT
production process.
The TGA4539-SM typically provides 30.5 dBm of
saturated output power with small signal gain of 20 dB.
The TGA4539-SM is available in a low
low-cost, surface
mount 20 lead 5x5 mm QFN package
ge and is ideally
suited for Point-to-Point Radio, Point-to--Multipoint and
VSAT communications.
Pin #
Symbol
1, 2, 4, 5, 6, 10, 11, 12,
14, 15, 16, 20
3
7, 19
8
9
13
17
18
N/C
RF IN
Vg
Vd1,2_Bot
Vd3_Bot
RF OUT
Vd3_Top
Vd1,2_Top
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part No.
ECCN
TGA4539-SM
3A001.b.2.c
Description
Ka-Band Power Amplifier
Standard T/R size = 500 pieces on a 7” reel.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30
Seconds)
Storage Temperature
+8 V
-5 to 0 V
12 V
984 mA
35 mA
6.9 W
22 dBm
200 oC
260 oC
Vd
Idq
Id_drive (Under RF
Drive, Constant Vg)
Vg
Min
Typical
Max Units
6
420
V
mA
800
mA
-0.59
V
Electrical specifications are measured at specified test
conditions.
Specifications are not guaranteed over all recommended
operating conditions.
-40 to 150 oC
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the
device at these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Idq = 420 mA, Vg = -0.59 V Typical.
Parameter
Min
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power @ Saturation
Output Power @ 1dB Gain Compression
Output TOI @ 26 dBm Pout/tone
Gain Temperature Coefficient
Power Temperature Coefficient
28
15.5
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
29.5
- 2 of 14 -
Typical
20
15
10
30.5
30
33
-0.06
-0.02
Max
Units
30
GHz
dB
dB
dB
dBm
dBm
dBm
dB/°C
dB/°C
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Specifications (cont.)
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 70 °C
Tbase = 70 °C, Vd = 6 V, Idq = 420
mA, Pdiss = 2.52 W
Tbase = 70 °C, Vd = 6 V, Id = 800
mA, Pout = 30.5 dBm, Pdiss = 3.8 W
θJC = 21.9 °C/W
Tch = 125 °C
Tm = 1.0 E+7 Hours
Tch = 153 °C
Tm = 9.6 E+5 Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Median Lifetime (Hours)
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
FET3
1.E+04
25
50
75
100
125
150
175
200
Channel Temperature (°C)
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Typical Performance
Gain vs. Frequency
Return Loss vs. Frequency
Vd = 6 V, Id = 420 mA, Vg = -0.59 V, 25 °C
25
Return Loss (dB)
20
Gain (dB)
Vd = 6 V, Id = 420 mA, Vg = -0.59 V, 25 °C
0
15
10
5
5
10
15
IRL
20
ORL
25
0
26
27
28
29
30
31
32
26
33
27
28
29
30
31
Frequency (GHz)
32
33
Frequency (GHz)
Output Power, Gain, Id vs. Input Power
Output Power (dBm), Gain (dB)
Output Power (dBm)
32
31
30
29
Psat
28
P1dB
27
26
25
28
28.5
29
29.5
30
30.5
Vd = 6 V, Idq = 420 mA, Vg = -0.59 V, 25 oC
35
1000
@ 29.5 GHz
30
900
25
800
20
700
15
600
Pout
Gain
Id
10
5
500
400
0
300
-18 -14 -10
31
Id (mA)
Output Power vs. Frequency
Vd = 6 V, Idq = 420 mA, Vg = - 0.59 V, 25 °C
-6
-2
2
6
10
14
18
Input Power (dBm)
Frequency (GHz)
Output TOI (dBm)
Output TOI vs. Frequency vs Power/Tone
Vd = 6 V, Idq = 420mA, Vg = -0.59 V, 25 °C
35
34
33
32
31
30
29
28
27
26
22dBm/tone
24dBm/tone
26dBm/tone
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Typical Performance (cont.)
Power vs. Frequency vs. Bias
Gain vs. Frequency vs. Bias
Vd = 6 V, Id = 330-500 mA, 25 oC
Gain (dB)
20
15
6V, 330mA
10
6V, 420mA
6V, 500mA
5
Vd = 6 V, Idq = 330-500 mA, 25 °C
32
Saturated Power (dBm)
25
31
30
29
6V, 330mA
28
6V, 420mA
27
6V, 500mA
26
25
0
26
27
28
29
30
31
32
28
33
28.5
Vd = 5-7 V, Id = 420 mA, 25 °C
Saturated Power (dBm)
Gain (dB)
15
5V, 420mA
6V, 420mA
7V, 420mA
5
30.5
31
31
30
29
5V, 420mA
28
6V, 420mA
27
7V, 420mA
26
25
0
26
27
28
29
30
31
32
28
33
28.5
Gain vs Frequency vs. Temperature
Saturated Power (dBm)
25
20
15
-40 °C
25 °C
5
85 °C
0
26
27
28
29
30
31
32
33
Frequency (GHz)
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
30
30.5
31
Vd = 6 V, Idq = 420 mA, Vg = -0.59 V
32
10
29.5
Power vs. Frequency vs. Temperature
Vd = 6 V, Id = 420 mA, Vg = -0.59 V
30
29
Frequency (GHz)
Frequency (GHz)
Gain (dB)
30
Vd = 5-7 V, Idq = 420 mA, 25 °C
32
20
10
29.5
Power vs. Frequency vs. Bias
Gain vs. Frequency vs. Bias
25
29
Frequency (GHz)
Frequency (GHz)
31
30
29
28
-40 °C
27
+25 °C
26
+85 °C
25
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
- 5 of 14 -
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Device Characterization Data
Load Pull Data
RF performance of the TGA4539-SM is optimum when placed in the impedance environment specified below. These
impedances are NOT the impedances of the device; they are the impedances presented to the device via an RF circuit or
load pull system. ZLOAD is the load impedance presented at pin 13. For load pull contours, refer to the TGA4539-SM
Product Information page.
The power data points shown below were measured in a load pull system. The power data points shown in ‘Typical
Performance’ were measured using the input and output structures shown in ‘PC Board Tuning Layout’ and can vary from
the load pull measurements.
Test Conditions:
Input power for load pull: +16 dBm.
Vd = 6.0 V, Idq=420mA, 25°C
ZSOURCE for load pull:
50+j0
Freq
(GHz)
ΓLOAD
ZLOAD (Ω)
Output
Power
(dBm)
28.0
29.25
30.0
31.0
Mag=0.371 Ang=30.1°
Mag=0.339 Ang=79.2°
Mag=0.375 Ang=91.1°
Mag=0.429 Ang=112.4°
86.5 + j37.5
44.8 + j33.8
37.2 + j32.5
27.0 + j26.3
30.97
30.66
30.29
30.06
Swp Max
3.1e+010
2.
0
6
0.
0.8
1.0
+j50
0.
0
3.
0.2
2.0
1.0
0.8
0.6
0.4
0
0.2
p1
0
5.0
29.25 GHz
10.0
28 GHz
10.0
p2
0
4.
5.0
p3
4.0
p4
30 GHz
3.0
4
31 GHz
∞
50+j0
-10.0
2
-0.
-4
.0
-5.
0
-3
.0
-1.0
-0.8
.0
-2
.4
-0
.6
-0
Swp Min
30.059
-j50
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Application Circuit
Vg can be biased from either side (pin 7 or pin 19)
Vd must be biased from both side (pins 8, 9, 17, 18)
Bias-up Procedure
Bias-down Procedure
Turn Vg to -1.5 V
Turn Vd to +6 V
Adjust Vg more positive until quiescent Id is 420 mA.
This will be ~ Vg = -0.59 V typical
Apply RF signal
Turn off RF signal
Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Turn Vd to 0 V
Turn Vg to 0 V
.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
- 7 of 14 -
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Pin Description
20 19 18 17 16
1
15
2
14
3
13
21
4
12
5
11
6
7
8
9
10
Pin
Symbol
Description
1, 5, 6, 10, 11, 15, 16, 20
2, 4, 12, 14
3
7, 19
13
N/C
N/C
RF IN
Vg
RF OUT
Vd12_Bot
Vd12_Top
Vd3_Bot
Vd3_Top
Internally connected to 21; must be grounded on PCB.
No internal connection; open on PCB for best performance.
Input, matched to 50 ohms.
Gate voltage. See Note 1
Output, matched to 50 ohms.
8,18
9,17
21
GND
Drain voltage for 1st and 2nd Stage. See Note 2
Drain voltage for 3rd Stage. See Note 2
Backside Paddle. Multiple vias should be employed to minimize inductance
and thermal resistance; see Mounting Configuration on page 12 for suggested
footprint.
Notes:
1. Bias network is required; can be biased from either side (pin 7 or pin 19); see Application Circuit on page 7 as an
example.
2. Bias network is required; must be biased from both side (pins 8, 9, 17, 18); see Application Circuit on page 7 as an
example.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Applications Information
PC Board Layout
Top RF layer is 0.010” thick Rogers RO3203, Єr = 3.02. Metal layers are 0.5-oz copper.
The pad pattern shown has been developed and tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary from company to company, careful
process development is recommended.
For further technical information, refer to the TGA4539-SM Product Information page.
Detail on
Next Page
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Applications Information (cont.)
Bill of Material
Ref Des
C1- C4
C5, C6, C7
R1
Value
100 pF
1 uF
15 Ohms
Description
Cap, 0402, 50 V, 5%, COG
Cap, 0603, 25 V, 10%, X5R
Res, 0402, 0.1 W, SMD
Manufacturer
Part Number
Various
Various
Various
PC Board Tuning Layout
Dimensions are in millimeters [inches].
All performance data in this data sheet was measured using the
transmission line tuning elements shown at pins 3 (RF In) and
pin 13 (RF Out). These transmission line dimension apply to
transmission lines on 0.010” thick Rogers RO3203, єr = 3.02.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
The TGA4539-SM will be marked with the “4539” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an autogenerated number. The OCR-A 2D Code has four rows and is the ‘XXXX number, one digit per row.
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is
NiPdAu. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Mechanical Information (cont.)
Mounting Configuration
All dimensions are in millimeters (inches).
Note:
Ground / thermal vias are critical for the proper performance of this device.
Vias have a final plated thru diameter of 0.406 mm (0.016”).
0.446 (0.017")
0.406 (0.016")
0.446
(0.017")
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section.
Standard T/R size = 500 pieces on a 7 x 0.5” reel.
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Cavity
Length
Width
Depth
Pitch
Cavity to Perforation
Length Direction
Cavity to Perforation
Width Direction
Width
Width
Distance Between Centerline
Cover Tape
Carrier Tape
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
- 12 of 14 -
Symbol
Size (in)
Size (mm)
A0
B0
K0
P1
0.207
0.207
0.043
0.315
5.25
5.25
1.80
8.00
P2
0.079
2.00
F
0.217
5.50
C
W
0.374
0.472
9.50
12.00
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Ka-Band 1 Watt Power Amplifier
Product Compliance Information
ESD Information
Solderability
Compatible with lead-free
free soldering
solder
processes, 260°
maximum reflow temperature.
Package lead plating: NiPdAu
ESD Rating:
Value:
Test:
Standard:
1A
Passes ≥ 250 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
A114
The use of no-clean
clean solder to avoid washing after
soldering is recommended.
This package is not compatible with solder containing
lead.
MSL Rating
RoHS Compliance
Level MSL1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level MSL
MSL1 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This
his product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
•
SVHC Free
Recommended Soldering Temperature Profile
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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TGA4539-SM
Ka-Band 1 Watt Power Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Preliminary Data Sheet: Rev F 10/11/12
© 2012 TriQuint Semiconductor, Inc.
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