PD - 93936A IRFR3706 IRFU3706 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS RDS(on) max ID 20V 9.0mΩ 75A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current D-Pak IRFR3706 I-Pak IRFU3706 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 12 75 53 280 88 44 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient www.kersemi.com Typ. Max. Units ––– ––– ––– 1.7 50 110 °C/W 1 7/6/00 IRFR/U3706 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 20 ––– ––– ––– ––– 0.6 ––– ––– ––– ––– Typ. ––– 0.021 6.9 8.1 11.5 ––– ––– ––– ––– ––– Max. Units ––– V ––– V/°C 9.0 11 mΩ 23 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 36A VGS = 4.5V, ID = 28A VGS = 2.8V, ID = 18A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 23 8.0 5.5 16 6.8 87 17 4.8 2410 1070 140 Max. Units Conditions ––– S VDS = 16V, ID = 57A 35 ID = 28A 12 nC VDS = 10V 8.3 VGS = 4.5V 24 VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 28A ns ––– RG = 1.8Ω ––– VGS = 4.5V ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units ––– ––– 220 28 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge Min. Typ. Max. Units ––– ––– 75 ––– ––– 280 ––– ––– ––– ––– ––– ––– 0.88 0.82 45 65 49 78 1.3 ––– 68 98 74 120 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 36A, VGS = 0V TJ = 125°C, I S = 36A, VGS = 0V TJ = 25°C, I F = 36A, VR=20V di/dt = 100A/µs TJ = 125°C, IF = 36A, VR=20V di/dt = 100A/µs www.kersemi.com IRFR/U3706 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 2.5V 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 V DS = 15V 20µs PULSE WIDTH 4.5 5.5 Fig 3. Typical Transfer Characteristics www.kersemi.com 10 100 Fig 2. Typical Output Characteristics 1000 3.5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 20µs PULSE WIDTH TJ = 175 °C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 10 2.5 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 6.5 ID = 71A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3706 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 VGS , Gate-to-Source Voltage (V) 10 100000 10 ID = 28A VDS = 16V VDS = 10V 8 6 4 2 0 1 10 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 100us 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100 TC = 25 ° C TJ = 175 ° C Single Pulse 1 1.8 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.kersemi.com IRFR/U3706 80 VDS LIMITED BY PACKAGE I D , Drain Current (A) VGS RD D.U.T. 60 RG 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % + -VDD 4.5V Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 5 IRFR/U3706 500 D R IV E R L VDS D .U .T RG + V - DD IA S 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 400 BOTTOM ID 12A 24A 28A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.kersemi.com IRFR/U3706 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.kersemi.com 7 IRFR/U3706 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) L E A D A S S IG N M E N T S 1 - GATE 3 2 - D R A IN 3 - S OU R CE 4 - D R A IN 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.kersemi.com IRFR/U3706 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 3 -B - N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 2X 3X 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information www.kersemi.com 9 IRFR/U3706 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) FE E D D IR E C TIO N TR L 1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R . 2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 . 1 3 IN C H 16 m m N O T ES : 1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 . Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.54mH RG = 25Ω, IAS = 28A. 10 Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. www.kersemi.com