LRC L2SD1781KQLT1G_11

LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(32V, 0.8A)
L2SD1781KQLT1G
L2SD1781KQLT1G Series
3
FFeatures
1) Very low VCE(sat).
VCE(sat) t 0.4 V (Typ.)
(IC / IB = 500mA / 50mA)
2) High current capacity in compact
package.
3) Complements the L2SB1197KXLT1G
1
2
SOT-23 /TO-236AB
4) We declare that the material of product compliance with RoHS requirements.
FStructure
Epitaxial planar type
NPN silicon transistor
COLLECTOR
3
FAbsolute maximum ratings (Ta = 25_C)
1
BASE
2
EMITTER
ORDERING INFORMATION
Device
Marking
Shipping
L2SD1781KQLT1G
AFQ
3000 Tape & Reel
L2SD1781KQLT3G
AFQ
10000 Tape & Reel
L2SD1781KRLT1G
AFR
3000 Tape & Reel
L2SD1781KRLT3G
AFR
10000 Tape & Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
FElectrical characteristics (Ta = 25_C)
DEVICE MARKING
L2SD1781KQLT1G=AFQ
L2S1781KRLT1G=AFR
ltem
Q
R
hFE
120~270
180~390
Electrical characteristic curves
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4