LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE z Applications Low current rectification and high speed switching z Features LRB520S-30T1G Extremelysmall surface mounting type. (SC-79/SOD523) Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200mA Low Reverse Current z Construction Silicon epitaxial planar 1 2 SOD523/SC-79 z We declare that the material of product compliance with RoHS requirements. 1 Cathode DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRB520S-30T1G 5J 3000/Tape&Reel LRB520S-30T3G 5J 10000/Tape&Reel 2 Anode MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40~+125 Unit V mA A °C °C ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ - Max. 0.60 Unit V - - 1.0 µA Conditions I F=200mA VR=10V Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LRB520S-30T1G Electricalcharacteristiccurves(Ta=25OC) 100 1 0.1 0.01 0.001 0 100 -25℃ 200 300 400 500 f=1MHｚ 0.1 0.01 0.001 0.0001 0.00001 600 0 10 75℃ 20 30 40 50 100℃ 125℃ -25℃ Fig. 1 Forward characteristics 75℃ 25℃ 125℃ 100℃ 1 0 Fig. 2 Reverse characteristics 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 10 Ta=25℃ f=1MHz VR=0V n=10pcs 45 100 60 40 20 40 35 30 25 20 AVE:28.2pF 15 10 5 10 20 0 0 30 75 100 0 125 AMBIENT TEMPERATURE : Ta ( C) Fig 4. Derating curve (mounting on glass epoxy PCBs) Fig. 3 Capacitance between terminals characteristics 8.3ms 20 1cyc 15 AVE:5.60A 5 Ct DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 50 o REVERSE VOLTAGE : VR(V) 25 25 0 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1 0 30 8.3ms 8.3ms 1cyc 5 1 Mounted on epoxy board 1000 1ms 5 10 1 100 0.3 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 IF=100mA time 300us 100 Rth(j-a) Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) IM=10mA t NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 10000 Ifsm 0 0 0.008 D=1/2 0.2 Sin(θ＝180) DC 0.1 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 f=1MHz Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT(pF) 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 REVERSE VOLTAGE:V R(V) FORWARD VOLTAGE:VF(mV) 25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT : I R (mA) FORWARD CURRENT : IF (A) 1 DC 0.006 D=1/2 Sin(θ＝180) 0.004 0.002 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.O 2/3 30 LESHAN RADIO COMPANY, LTD. LRB520S-30T1G SC-79/SOD-523 −X− D −Y− E 2X b 0.08 1 DIM A b c D E HE L L2 2 X Y M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. TOP VIEW MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 A c HE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.48 PACKAGE OUTLINE 1.80 2X 0.40 DIMENSION: MILLIMETERS Rev.O 3/3