LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G zApplications Low power rectification 3 1 zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Sym bol Lim its Unit R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（ *1 ） Param eter VRM VR Io 40 40 100 V V mA Forward current s urge peak （ 60Hz・ 1cyc ）（ *1 ） Junction tem perature S torage tem perature IFSM Tj Ts tg 1 125 -40 to +125 ℃ A ℃ (*1) Rating of per diode zElectrical characteristics (Ta = 25°C) Param eter Forwarad voltage Sym bol Min. Typ. Max. Unit VF 1 - - 0.55 V Conditions IF =100m A VF 2 - - 0.34 V IF =10m A Revers e current IR - - 30 µA VR =10V Capacitance between term inal Ct - 6 - pF VR =10V , f=1MHz z Device marking and ordering information Device Marking Shipping LRB421LT1G D3C 3000/Tape&Reel LRB421LT3G D3C 10000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB421LT1G Electrical characteristic curves (Ta = 25°C) 100 10000 100 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 35 450 440 430 290 280 270 VF DISPERSION MAP 3 2 1 0 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP AVE:2.548uA 5 15 10 5 AVE:6.20ns trr DISPERSION MAP 1000 5 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc Ifsm t 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 20 0 15 Ifsm 100 Ta=25℃ f=1MHz VR=0V n=10pcs 25 IFSM DISRESION MAP 15 0.1 10 30 0 10 15 IR DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) AVE:6.09pF 4 PEAK SURGE FORWARD CURRENT:IFSM(A) 6 5 20 0 20 Ta=25℃ f=1MHz VR=10V n=10pcs 7 Ta=25℃ VR=10V n=10pcs 25 VF DISPERSION MAP 10 8 30 AVE:281.5mV 260 9 20 30 Ta=25℃ IF=10mA n=30pcs 300 AVE:439.5mV 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE CURRENT:IR(uA) 460 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 5 310 Ta=25℃ IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB421LT1G Electrical characteristic curves (Ta = 25°C) 0.1 0.07 REVERSE POWER DISSIPATION:PR (W) D=1/2 0.06 Sin(θ＝180) DC 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 0.08 FORWARD POWER DISSIPATION:Pf(W) 0.3 0.05 0.04 Sin(θ＝180) 0.03 DC 0.02 D=1/2 0.01 0 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 Io 0A 0V 0.25 t 0.2 DC T VR D=t/T VR=20V Tj=125℃ 0.15 D=1/2 0.1 0.05 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 0.2 Io t DC T 0.15 VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 125 LESHAN RADIO COMPANY, LTD. LRB421LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4