TOSHIBA TLP3526

TLP3526
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP3526
Triac Driver
Programmable Controllers
AC−Output Module
Solid State Relay
Unit in mm
The TOSHIBA TLP3526 consists of a photo−triac optically coupled to a
gallium arsenide infrared emitting diode in a 16 lead plastic DIP.
·
Peak off−state voltage: 600V(min.)
·
Trigger LED current: 10mA(max.)
·
On−state current: 1.0Arms(max.)
·
Isolation voltage: 2500 Vrms(min.)
·
UL recognized: UL1577, file no. E67349
TOSHIBA
11−20A2
Weight: 1.13 g
Pin Configuration (top view)
2
15
3
4
13
5
2
3
4,5,6,7
9,13
11
15
1
:
:
:
:
:
:
Anode
Cathode
N.C.
Triac T2
Triac T1
Triac gate
6
11
7
9
2002-09-25
TLP3526
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VDRM
600
V
Forward current
LED
Forward current derating (Ta ≥ 53°C)
Off-state output terminal voltage
Detector
On-state RMS current
Ta = 40°C
1.0
IT(RMS)
Ta = 60°C
A
0.7
∆IT / °C
-14.3
mA / °C
ISP
2
A
ISTM
10
A
Tj
110
°C
Storage temperature range
Tstg
-40~125
°C
Operating temperature range
Topr
-20~80
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
On-state current derating (Ta ≥ 40°C)
Peak current from snubber circuit
(100µs pulse, 120pps)
Peak nonrepetitive surge current (50Hz, peak)
Junction temperature
Isolation voltage (AC, 1min., R.H.≤ 60%)
(Note)
(Note 1) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
―
―
240
Vac
Forward current
IF
15
20
25
mA
Peak current from snubber circuit
ISP
―
―
1
A
Operating temperature
Topr
-20
―
80
°C
2
2002-09-25
TLP3526
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
µA
Capacitance
CT
V = 0, f = 1MHz
―
30
―
pF
Peak off-state current
IDRM
VDRM = 600V, Ta = 110°C
―
―
100
µA
Peak on-state voltage
VTM
ITM = 1.5A
―
―
3.0
V
IH
RL = 100Ω
―
―
25
mA
―
500
―
V/µs
―
5
―
V/µs
Min.
Typ.
Max.
Unit
Holding current
Critical rate of rise of
off-state voltage
dv / dt
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin = 240Vrms
(Fig.1)
Vin = 240Vrms, IT = 1.0Arms
(Fig.1)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Trigger LED current
IFT
VT = 6V
―
―
10
mA
Capacitance
(input to output)
CS
VS = 0, f = 1MHz
―
1.5
―
pF
Isolation resistance
RS
VS = 500V
5×1010
1014
―
Ω
2500
―
―
AC, 1 second, in oil
―
5000
―
DC, 1 minute, in oil
―
5000
―
AC, 1 minute
Isolation voltage
BVS
Vrms
Vdc
Fig.1: dv / dt test circuit
VCC
＋
－
Rin
120Ω
2
15
3
13
5V,VCC
～
9
0V
Vin
11
dv/dt（c）
RL
3
dv/dt
2002-09-25
TLP3526
IF – Ta
IT(RMS) – Ta
2.0
(A)
80
On-state current IT(RMS)
Allowable forward current
IF (mA)
100
60
40
20
0
－20
0
20
40
60
80
100
120
1.6
1.2
0.8
0.4
0
－20
0
20
Ambient temperature Ta (℃)
IF (mA)
1000
500
300
100
50
30
10―3
10－2
3
10－1
3
100
120
IF – VF
Ta=25℃
10
5
3
1
0.5
0.3
0.1
0.6
100
3
30
0.8
Duty cycle ratio DR
1.0
1.2
Forward voltage
1.4
1.6
1.8
VF (V)
IFP – VFP
ΔVF / ΔTa – IF
1000
(mA)
－2.4
Pulse forward current
－2.8
IFP
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / ℃)
－3.2
－2.0
－1.6
－1.2
－0.8
－0.4
0.1
80
50
Forward current
Allowable pulse forward current
IFP (mA)
100
Pulse width ≤ 100µs
Ta=25℃
10
3
60
Ambient temperature Ta (℃)
IFP – DR
3000
40
0.3 0.5
1
3
Forward current
5
10
30
500
300
100
50
30
10
50
Repetitive frequency
3
1
0.6
IF (mA)
Pulse width ≤ 10µs
5
＝ 100Hz
Ta=25℃
1.0
1.4
1.8
Pulse forward voltage
4
2.2
2.6
VFP (V)
2002-09-25
TLP3526
Normalized IFT – Ta
Normalized IH – Ta
3
3
VT = 6V
2
Holding current IH
(arbitrary unit)
Trigger LED current IFT
(arbitrary unit)
2
1.2
1
0.5
0.3
0.1
－40
0
－20
20
40
60
80
1.2
1
0.5
0.3
0.1
－40
100
－20
Ambient temperature Ta (℃)
Off-state output terminal voltage
VDRM (arbitrary unit)
Peak off-state current IDRM
(arbitrary unit)
60
80
100
80
100
Normalized VDRM – Ta
102
101
100
20
40
60
80
1.2
1.0
0.8
0.6
0.4
0.2
－40
100
Ambient temperature Ta (℃)
－20
0
20
40
60
Ambient temperature Ta (℃)
Normalized VIH – Ta
10
Inhibit voltage VIH
(arbitrary unit)
40
1.4
VDRM = Rated
0
20
Ambient temperature Ta (℃)
Normalized IDRM – Ta
103
0
5
3
2
1.8
1.6
1.4
1.2
1
10
30
50
100
300
500
1000
Ambient temperature Ta (℃)
5
2002-09-25
TLP3526
RESTRICTIONS ON PRODUCT USE
000707EBC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
6
2002-09-25