TLP363J TOSHIBA Photocoupler GaAs Ired & Photo-Triac TLP363J Unit: mm Triac Drivers Programmable Controllers AC-Output Modules Solid State Relays The TOSHIBA TLP363J consists of a zero-voltage-crossing turn-on photo-triac optically coupled to a gallium arsenide infrared-emitting diode in a four-lead plastic DIP package. This product has a greater capacity to withstand external noise than the TLP361J. • Peak off-state voltage: 600 V (Min.) • Trigger LED current: 10 mA (Max.) • On-state current: 100 mA (Max.) • Isolation voltage: 5000 Vrms (Min.) TOSHIBA • Zero crossing function 11-5B2 Weight: 0.26 g (Typ.) • UL recognized: UL1577, file No. E67349 • Option (D4) type TÜV approved: DIN EN60747-5-2 Certificate No. R50033433 Maximum operating insulation voltage : 890 Vpk Maximum permissible overvoltage : 8000 Vpk (Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).” Pin Configuration (top view) •Construction mechanical rating Creepage distance Clearance Insulation thickness 7.62 mm pitch TLPXXX type 10.16 mm pitch TLPXXX type 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 4 1 2 ZC 3 1: Anode 2: Cathode 3: Terminal1 4: Terminal2 •Trigger LED Current Classi− fication* Standard Trigger LED current (mA) VT = 3 V, Ta = 25°C Min. Max. ― 10 Marking of classification blank (Note) When specifying the application type name for certification testing, be sure to use the standard product type name, e.g., TLP363J 1 2007-10-01 TLP363J Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF /°C −0.7 mA /°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VDRM 600 V Forward current LED Forward current derating (Ta ≥ 53°C) Off-state output terminal voltage Ta = 25°C Detector On-state RMS current 100 IT(RMS) Ta = 70°C On-state current derating (Ta ≥ 25°C) mA 50 ∆IT/°C -1.1 mA /°C ITP 2 A ITSM 1.2 A Tj 115 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 5000 Vrms Peak on-state current (100 μs pulse, 120 pps) Peak nonrepetitive surge current (Pw =10 ms, DC = 10%) Junction temperature Isolation voltage (AC,1min. , R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC — — 240 Vac Forward current IF 15 20 25 mA Peak on-state current ITP — — 1 A Operating temperature Topr −25 — 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP363J Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Peak off-state current IDRM VDRM = 600 V — 10 1000 nA Peak on-state voltage VTM ITM = 100 mA — 1.7 3.0 V — 0.6 — mA Holding current — IH Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage dv/dt Vin = 240 Vrms , Ta = 85°C (Note 2) 200 500 — V/μs dv/dt(c) Vin = 60 Vrms , IT = 15 mA (Note 2) — 0.2 — V/μs Min. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VT = 3 V — — 10 mA Inhibit voltage VIH IF = Rated IFT — — 20 V Leakage in inhibited state IIH — 200 600 μA Turn-on time tON — 30 100 μs Impulse noise durability VN ― 2000 ― V Min. Typ. Max. Unit — 0.8 — pF — Ω IF = Rated IFT VT = Rated VDRM VD =3 → 1.5 V , RL = 20 Ω IF = Rated IFTΧ1.5 tN=1μs, Snuber condition 100 Ω +0.033 μF (Note.3) Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) Test Condition CS Isolation resistance VS = 0 , f = 1 MHz RS VS = 500 V, R.H.≤ 60% BVS 10 14 5000 — — AC , 1 second, in oil — 10000 — DC , 1 minute, in oil — 10000 — AC , 1 minute Isolation voltage 1×10 12 Vrms Vdc (Note 2): dv/dt test circuit + Vcc - Rin 120 Ω 1 4 2 3 Vin +5 V, Vcc RL 0V dv/dt (c) 3 dv/dt 2007-10-01 TLP363J (Note 3): impulse noise durability test circuit Noise supply Monitor tN open AC 100 V Vs VN ZC Noise supply AC100V Vs Triac monitor ON 4 2007-10-01 TLP363J IT (RMS) – Ta 200 80 160 R.M.S on-stage current IT (RMS) (mA) Allowable forward current IF (mA) IF – Ta 100 60 40 80 40 20 0 －20 120 0 20 40 60 80 Ambient temperature 100 0 －20 120 0 20 40 Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100 μs 50 120 1.6 1.8 Ta (°C) Ta = 25 °C (mA) 10 Forward current IF Allowable pulse forward current IFP (mA) 500 300 100 50 30 5 3 1 0.5 0.3 10－3 10－2 3 10－1 3 Duty cycle ratio 3 0.1 0.6 100 DR 0.8 1.0 1.2 Forward voltage ΔVF/ΔTa – IF 1.4 VF (V) IFP – VFP －3.2 IFP (mA) 1000 －2.8 －2.4 Pulse forward current Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 100 30 1000 －2.0 －1.6 －1.2 －0.8 －0.4 0.1 80 IF – V F 100 Ta = 25 °C 10 3 60 0.3 0.5 1 3 5 Forward current IF 10 500 300 100 50 30 10 (mA) Repetitive 3 1 0.6 30 50 Pulse width ≤ 10 μs 5 Frequency = 100 Hz Ta = 25 °C 1.0 1.4 1.8 Pulse forward voltage 2.2 VFP 2.6 (V) *: The above graphs show typical characteristics. 5 2007-10-01 TLP363J Normalized IFT – Ta 1.2 1 1.2 1 Holding current IH (arbitrary unit) Trigger LED current IFT (arbitrary unit) 2 0.5 0.3 0 －20 20 40 Ambient temperature Normalized 60 80 －20 0 20 40 Ambient temperature IDRM – Ta Normalized 60 80 100 80 100 80 100 Ta (°C) VDRM – Ta 1.4 102 101 100 20 40 60 Ambient temperature Normalized 80 1.2 1.0 0.8 0.6 0.4 0.2 －40 100 Ta (°C) －20 0 20 40 Ambient temperature VIH – Ta Normalized 3 3 2 2 1.2 1 1.2 1 Inhibit current IIH (arbitrary unit) Inhibit voltage VIH (arbitrary unit) 0.3 Ta (°C) VDRM = Rated 0 0.5 0.1 －40 100 Off-state output terminal voltage VDRM (arbitrary unit) 103 IH – Ta VT = 3 V 2 0.1 －40 Peak off-state current IDRM (arbitrary unit) Normalized 3 3 0.5 0.3 60 Ta (°C) IIH – Ta 0.5 0.3 IF = Rated IFT VT = Rated VDRM IF = Rated IFT 0.1 －40 －20 0 20 40 Ambient temperature 60 80 0.1 －40 100 Ta (°C) －20 0 20 40 Ambient temperature 60 Ta (°C) *: The above graphs show typical characteristics. 6 2007-10-01 TLP363J RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01