LUGUANG LL5711

LL5711/LL6263
Schottky Barrier Diode
MINI MELF
Features
—
For general purpose applications.
—
Metal-on-silicon schottky barrier device which is
protected by a PN junction guard ring. The low
Dimension in millimeters
forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and
low logic level applications.
Absolute Maximum Ratings (Tj=25℃)
Parameter
Part
Symbol
Value
Unit
LL5711
VRRM
70
V
LL6263
VRRM
60
V
Maximum single cycle surge 10us square wave
IFSM
2.0
A
Power dissipation
Ptot
400
mW
Maximum junction temperature
Tj
125
℃
Storage temperature range
TS
-55~+150
℃
Peak inverse voltage
Electrical Characteristics(Tj=25℃)
Parameter
Reverse breakdown
voltage
Symbol
V(BR)R
Leakage current
IR
Forward voltage drop
VF
Junction capacitance
Ctot
Reverse recovery time
trr
Test Conditions
Part
Min
Typ
Max
Unit
LL5711
70
-
-
V
LL6263
60
-
-
V
VR=50V
-
-
200
nA
IF=1mA
-
-
0.41
V
IF=15mA
-
-
1.0
V
LL5711
-
-
2.0
pF
LL6263
-
-
2.2
pF
-
-
1.0
ns
IR=10μA (pulsed)
VR=0V, f=1MHz
IF= IR=5mA recover to 0.1 IR
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
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mail:[email protected]
LL5711/LL6263
Schottky Barrier Diode
IF – Forward current (mA)
IF – Forward current (mA)
Characteristics (Tj=25℃ unless otherwise specified)
VF – Forward voltage (V)
VF – Forward voltage (V)
Figure 1. Typical variation of forward current
Figure 2. Typical forward conduction curve
IR – Reverse current (uA)
CT – Typical capacitance (pF)
vs. forward voltage
VR – Reverse voltage (V)
VR – Reverse voltage (V)
Figure 3. Typical variation of reverse current at
Figure 4. Typical capacitance curve as a function
various temperatures
of reverse voltage
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mail:[email protected]