Certificate TH97/10561QM SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES * For general purpose applications * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. * Pb / RoHS Free 1.15 0.80 2.80 MECHANICAL DATA : 2.30 * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD101AWS Marking Code : SJ * SD101BWS Marking Code : SK * SD101CWS Marking Code : SL Dimensions in millimeters Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Symbol SD101AWS SD101BWS SD101CWS Repetitive Peak Reverse Voltage Electrical Characteristics Junction Capacitance Reverse Recovery Time Unit 60 50 40 2 150(1) 650(1) 125(1) -55 to + 150 VRRM V A mW °C/W °C °C (TJ = 25 °C unless otherwise noted) Parameter Forward Voltage Drop Value IFSM Ptot RӨJA TJ TSTG Maximum Single Cycle Surge 10 µs Square Wave Power Dissipation (Infinite Heat Sink) Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range Reverse Current 0.40 0.15 (max) 1.35 1.10 1.80 1.60 0.25 SOD-323 FEATURES : Reverse Breakdown Voltage Certificate TW00/17276EM Test Condition Symbol SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS V(BR)R IR = 10 μA IR VR = 50 V VR = 40 V VR = 30 V IF = 1mA VF IF = 15mA Ctot VR = 0 V, f = 1 MHz Trr IF = IR = 5mA , recover to 0.1IR Min 60 50 40 - Typ - Max 200 200 200 0.41 0.40 0.39 1.00 0.95 0.90 2.0 2.1 2.2 Unit - - 1 ns V nA V pF Note: (1) Valid provided that electrodes are kept at ambient temperature. Page 1 of 2 Rev. 01 : May 4, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS) Typical variation of forward current vs. forward voltage for primary conduction through the schottky barrier Typical forward conduction curve of combination Schottky barrier and PN junction guard ring 100 10 SD101BWS SD101BWS 2 1 Forward Current , IF (mA) Forward Current , IF (mA) SD101AWS SD101CWS 5 SD101AWS 0.5 0.2 0.1 0.05 80 SD101CWS 60 40 20 0.02 0.01 0 0 0.5 0 1 0.5 Forward Voltage , VF (V) Forward Voltage , VF (V) Typical capacitance curve as a function of reverse Voltage Typical variation of reverse current at various temperatures 2 100 50 Tj = 25°C SD101BWS Reverse Current , IR (μA) Typical Capacitance , C T (pF) 20 SD101CWS 1 SD101AWS Ta = 125 °C 10 5 Ta = 100 °C 2 1 0.5 0.2 Ta = 25 °C 0.1 0.05 0.02 0.01 0 0 10 20 30 40 Reverse Voltage , VR (V) Page 2 of 2 1 50 0 10 20 30 40 50 Reverse Voltage , VR (V) Rev. 01 : May 4, 2006