LL5711 and LL6263 Small-Signal Diode Schottky Diodes Features For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter LL5711 LL6263 Peak inverse voltage Symbol Value Unit VRRM 70 60 Volts 400 (1) mW Power dissipation (Infinite heatsink) Ptot Maximum single cycle surge 10 us square wave IFSM 2.0 Tj 125 o C -55 to +150 o C Junction temperature Storage temperature range TS Amps Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current LL5711 LL6263 Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=10uA 70 60 - - Volts IR VR=50V - - 200 nA Forward voltage drop VF IF=1.0mA IF=15mA - - 0.41 1.0 Volt Junction capacitance Ctot VR=0V, f=1MHz - - 2.2 pF trr IF=IR=5mA, recover to 0.1IR - - 1 ns Reverse recovery time Notes: 1. Valid provided that electrodes are kept at ambient temperature. 694 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 695