MBRF735-MBRF7150 Isolated 7.5AMP. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .055(1.4) .043(1.1) .030(0.76) .020(0.50) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Mechanical Data .112(2.85) .100(2.55) Dimensions in inches and (millimeters) Cases: ITO-220AC molded plastic body Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Repetitive Forward Current (Square Wave, 20KHz) at o Tc=105 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) o IF=7.5A,Tc=25 C o IF=7.5A,Tc=125 C o IF=15A,Tc=25 C o IF=15A,Tc=125 C o Maximum Instantaneous Reverse Current @ Tc =25 C o at Rated DC Blocking Voltage (Note 1) @ Tc=125 C Voltage Rate of Change (Rated VR) Typical Junction Capacitance Maximum Thermal Resistance, (Note 3) Operating Junction Temperature Range Storage Temperature Range Notes: VRRM VRMS VDC I(AV) 735 35 24 35 745 45 31 45 750 50 35 50 760 60 42 60 IFRM IFSM IRRM VF IR RθJC TJ TSTG 7100 100 70 100 7150 150 105 150 7.5 A A 150 A 0.5 － 0.57 0.84 0.72 0.75 0.65 － － 0.1 15 0.1 10 350 280 A 0.92 0.82 - 0.1 5.0 1.02 0.92 - 10,000 V mA mA V/uS 200 7.0 -65 to +150 -65 to +175 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate. http://www.luguang.cn V V V 15.0 1.0 dV/dt Cj 790 90 63 90 mail:[email protected] pF o C/W o C o C MBRF735-MBRF7150 Isolated 7.5AMP. Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES (MBRF735 THRU MBRF7150) FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 10 8 6 4 2 MBRF735-MBRF745 MBRF750-MBRF7150 0 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 150 125 100 75 50 25 0 50 100 o CASE TEMPERATURE. ( C) 1 150 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 40 50 10 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS Pulse Width=300 s 1% Duty Cycle 10 71 50 INSTANTANEOUS REVERSE CURRENT. (mA) RF 00 MB Tj=25 0C RF 790 -71 1 MB INSTANTANEOUS FORWARD CURRENT. (A) MBRF735-MBRF745 MBRF750-MBRF7150 Tj=125 0C 10 0.1 Tj=125 0C 1 0.1 Tj=75 0C 0.01 MBRF735-MBRF745 MBRF750-MBRF760 MBRF790-MBRF7150 Tj=25 0C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.001 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 100 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 4,000 Tj=25 0C f=1.0MHz Vsig=50mVp-p 1,000 100 MBRF735-MBRF745 MBRF750-MBRF760 MBRF790-MBRF7150 40 0.1 100 1.0 10 REVERSE VOLTAGE. (V) http://www.luguang.cn 100 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 0.1 1 10 T, PULSE DURATION. (sec) mail:[email protected] 100