MCL4148/MCL4448 Small Signal Fast Switching Diode Micro Melf Cathode identification 1.35 Glass Φ1.25±0.05 Features • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD323 / SOT23 footprints Electrical data identical with the devices 1N4148 and 1N4448 respectively • Micro Melf package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC R≥2.5 Glass 1.9±0.1 Glass Case Micro Melf Dimension in millimeters Applications • Extreme fast switches Mechanical Data Case: MicroMELF Glass case Weight: approx. 12 mg Cathode Band Color: Black Packaging Codes/Options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Ordering code Remarks MCL4148 Part VRRM = 100 V, VF at IF 50 mA = 1 V Type differentiation MCL4148-TR3 or MCL4148-TR Tape and Reel MCL4448 VRRM = 100 V, VF at IF 100 mA = 1 V MCL4448-TR3 or MCL4448-TR Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 µs Repetitive peak forward current Forward continuous current Average forward current VR = 0 Power dissipation http://www.luguang.cn Symbol Value Unit VRRM 100 V VR 75 V IFSM 2 A IFRM 450 mA mA IF 200 IFAV 150 mA Ptot 500 mW mail:[email protected] MCL4148/MCL4448 Small Signal Fast Switching Diode Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction to ambient air mounted on epoxy-glass hard tissue, Fig. 5, Symbol Value Unit RthJA 500 K/W 35 µm copper clad, 0.9 mm2 copper area per electrode Tj 175 °C Tstg - 65 to + 175 °C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Part Symbol Min IF = 5 mA MCL4448 VF 620 IF = 50 mA MCL4148 VF IF = 100 mA MCL4448 VF Typ. Max Unit 720 mV 860 1000 mV 930 1000 mV VR = 20 V IR 25 nA VR = 20 V, Tj = 150 °C IR 50 µA 5 µA VR = 75 V IR Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD Rectification efficiency VHF = 2 V, f = 100 MHz ηr Reverse recovery time IF = IR =10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω 100 V(BR) V 4 pF trr 8 ns trr 4 ns 45 % Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 1000 MCL 4448 I F - Forward Current (mA) I F - Forward Current (mA) MCL 4148 100 Scattering Limit 10 1 100 Scattering Limit 10 1 Tj = 25 ° C Tj = 25 °C 0.1 0.1 0 16641 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage http://www.luguang.cn 0 16643 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage mail:[email protected] MCL4148/MCL4448 Small Signal Fast Switching Diode I R - Reverse Current (nA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 1 10 100 V R - Reverse Voltage (V) 94 9098 Figure 3. Reverse Current vs. Reverse Voltage C D - Diode Capacitance (pF) 3.0 f = 1 MHz Tj = 25 °C 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 100 V R - Reverse Voltage (V) 94 9099 Figure 4. Diode Capacitance vs. Reverse Voltage 0.71 1.3 1.27 0.152 9.9 0.355 25 10 2.5 95 10329 24 Figure 5. Board for RthJA definition (in mm) http://www.luguang.cn mail:[email protected]