LUGUANG SOD64

BY228
Standard Avalanche Sinterglass Diode
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Features
• Glass passivated junction
• Hermetically sealed package
Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: Sintered glass case, SOD 64
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
949588
Weight: 860 mg, (max. 1000 mg)
Parts Table
Part
Type differentiation
BY228
Package
VR = 1500 V; IFAV = 3 A
SOD64
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
1500
V
IR = 100 µA
VRRM
1650
V
tp = 10 ms, half sinewave
IFSM
50
A
IFAV
3
A
Tj
140
°C
Tstg
- 55 to +
175
°C
ER
10
mJ
Reverse voltage
see electrical characteristics
Repetitive peak reverse voltage
Peak forward surge current
Sub type
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
I(BR)R = 0.4 A
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
on PC board with spacing 25 mm
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Sub type
Symbol
Value
Unit
RthJA
70
K/W
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BY228
Standard Avalanche Sinterglass Diode
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type
Symbol
Forward voltage
IF = 5 A
VF
Reverse current
VR = 1500 V
IR
VR = 1500 V, Tj = 140 °C
Total Reverse recovery time
Reverse recovery time
Min
Typ.
Max
Unit
1.5
V
5
µA
IR
140
µA
IF = 1 A, - diF/dt = 0.05 A/µs
trr
20
µs
IF = 0.5 A, IR = 1 A, iR = 0,25 A
trr
2
µs
2
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
40
I FAV – Average Forward Current ( A )
3.5
30
20
l
l
10
TL=constant
0
0
5
10
15
20
25
2.5
2.0
1.5
1.0
RthJA=70K/W
PCB: d=25mm
0.5
0.0
30
l – Lead Length ( mm )
94 9081
VR=VRRM
half sinewave
RthJA=25K/W
l=10mm
3.0
0
Figure 1. Typ. Thermal Resistance vs. Lead Length
25
50
75
100
125
150
Tamb – Ambient Temperature ( °C )
16408
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100.000
VR = VRRM
IR – Reverse Current ( mA )
I F – Forward Current ( A)
10.000
Tj=150°C
1.000
Tj=25°C
0.100
0.010
0.001
10
1
0.0
16407
100
0.5
1.0
1.5
2.0
2.5
3.0
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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25
16409
50
75
100
125
150
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
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BY228
Standard Avalanche Sinterglass Diode
PR – Reverse Power Dissipation ( mW )
350
70
VR = VRRM
CD – Diode Capacitance ( pF )
300
250
PR–Limit
@100%VR
200
150
PR–Limit
@80%VR
100
50
0
50
40
30
20
10
0
25
16410
f=1MHz
60
50
75
100
125
Tj – Junction Temperature ( °C )
150
0.1
16411
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1.0
10.0
VR – Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0g
Cathode Identification
∅ 4.3 max.
technical drawings
according to DIN
specifications
∅ 1.35 max.
26 min.
4.2 max.
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100.0
26 min.
94 9587
mail:[email protected]