MLX92241LSE-AAA-008 2-Wire Hall Effect Switch Features and Benefits Application Examples Wide operating voltage range: from 2.7V to 24V Very wide range for magnetic sensitivity Chopper-stabilized amplifier stage Programmable Built-in negative temperature coefficient Reverse Supply Voltage Protection Under-Voltage Lockout Protection Thermal Protection High ESD rating / Excellent EMC performance Thin SOT23 3L Green Compliant package Automotive, Consumer and Industrial Wiper motor Window lifter Doorlock Seatbelt buckle Seat positioning Sunroof/Tailgate opener Electrical power steering Ordering Information Part No. MLX92241LSE-AAA-008-RE Temperature Code L (-40°C to 150°C) VDD UnderVoltage Lockout TEST Temperature Compensation Switched Hall Plate Bop/Brp reference Thermal Protection In an event of a drop below the minimum supply voltage during operation, the under-voltage lock-out protection will automatically freeze the device, preventing the electrical perturbation to affect the magnetic measurement circuitry. The output current state is therefore only updated based on a proper and accurate magnetic measurement result. Output Current Sink CDS Amplifier Control Trimming Register GND 2 General Description The Melexis MLX92221 is the new generation Halleffect switch designed in mixed signal submicron CMOS technology. The device integrates a voltage regulator, Hall sensor with advanced offset cancellation system and a current sink-configured output driver, all in a single package. Based on a brand new platform, the magnetic core is using an improved offset cancellation system allowing faster and more accurate processing while being temperature insensitive and stress independent. In addition a temperature coefficient is implemented to compensate the natural behaviour of certain types of magnets becoming weaker with rise in temperature. 390109224108 Rev. 1 Comment RE (Reel) - CHTR The included voltage regulator operates from 2.7 to 24V, hence covering a wide range of applications. With the built-in reverse voltage protection, a serial resistor or diode on the supply line is not required so that even remote sensors can be specified for low voltage operation down to 2.7V while being reverse voltage tolerant. 1 Functional Diagram Voltage Regulator with Reverse Polarity Protection Package Code SE (TSOT-3L) The two-wire interface not only saves one wire, but also allows implementation of diagnostic functions as reverse polarity connection and malfunction detection. The on-chip thermal protection also switches off the output if the junction temperature increases above an abnormally high threshold. It will automatically recover once the temperature decreases below a safe value. With switching magnetic characteristics the supply current state is turned high by a sufficiently strong field facing the package branded side. Toggling the state of the supply current from high to low is possible by applying low or no magnetic field. The MLX92221 is delivered in a Green and RoHS compliant Plastic Single-in-Line (TO-92 flat) for throughhole mount or PCB-less design or in 3-pin Thin Small Outline Transistor (TSOT) for surfacemount process Page 1 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch Table of Contents 1 Functional Diagram .................................................................................................................... 1 2 General Description .................................................................................................................... 1 3 Absolute Maximum Ratings ....................................................................................................... 3 4 General Electrical Specifications ............................................................................................... 4 5 Magnetic Specifications ............................................................................................................. 5 6 Magnetic Behaviour .................................................................................................................... 5 6.1 Latch sensor .............................................................................................................................................................. 5 7 Performance Graphs................................................................................................................... 6 7.1 BOP and BRP vs. TJ ..................................................................................................................................................... 6 7.2 BOP and BRP vs. VDD ................................................................................................................................................... 6 7.3 IOFF vs. Tj ................................................................................................................................................................... 6 7.4 IOFF vs. VDD................................................................................................................................................................. 6 7.5 ION vs.TJ ..................................................................................................................................................................... 6 7.6 ION vs VDD ................................................................................................................................................................. 6 7.7 VDD derating SE package ......................................................................................................................................... 7 8 Application Information .............................................................................................................. 8 8.1 Typical Automotive Application Circuit ....................................................................................................................... 8 8.2 Automotive and Harsh, Noisy Environments Application Circuit ................................................................................ 8 8.3 Strobbing VDD application (used for reduced self-heating) ....................................................................................... 8 9 Standard information regarding manufacturability of Melexis products with different soldering processes ...................................................................................................................... 9 10 ESD Precautions ....................................................................................................................... 9 11 SE (TSOT-3L) Package Information ....................................................................................... 10 12 Disclaimer................................................................................................................................ 11 390109224108 Rev. 1 Page 2 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 3 Absolute Maximum Ratings Parameter Symbol Value Units Supply Voltage (1, 2) VDD +27V V Supply Current (1, 2, 3) IDD +20 mA Supply Current (1, 4, 3) IDD +50 mA Reverse Supply Voltage (1, 2) VDDREV -24 V Reverse Supply Current (1, 2, 5) IDDREV -20 mA Reverse Supply Current (1, 4, 5) IDDREV -50 mA TJ +165 C - 3000 V - 400 V - 1000 V B Unlimited mT Maximum Junction Temperature ESD Sensitivity – HBM ESD Sensitivity – MM (6) (7) (8) ESD Sensitivity – CDM (9) Magnetic Flux Density Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability. 1 The maximum junction temperature should not be exceeded For maximum 1 hour Including current through protection device 4 For maximum 500ms 5 Through protection device 6 For 1000 hours. 7 Human Model according AEC-Q100-002 standard 8 Machine Model according AEC-Q100-003 standard 9 Charged Device Model according AEC-Q100-011 standard 2 3 390109224108 Rev. 1 Page 3 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 4 General Electrical Specifications DC Operating Parameters VDD = 3.5 to 24V, TJ = -40°C to 165°C (unless otherwise specified) Parameter Supply Voltage Start-Up Supply Current Power-On Time (2,3) Power-On State Symbol VDD ISTART tON - OFF Supply Current IOFF ON Supply Current Supply Current Rise/Fall Time Chopping Frequency Refresh Period ION tRISE/FALL fCHOP tPER Delay time (4) tD Output Jitter (p-p) tJITTER Maximum Switching Frequency (5) Under-voltage Lockout Threshold Under-voltage Lockout Reaction time Thermal Protection Threshold Thermal Protection Release Safe Mode Supply Current Reverse Supply Current TSOT Package Thermal Resistance Test Conditions Operating VDD = 5V, dVDD/dt > 2V/us Supply Current state after tON, B=null Min 2.7 1.5 - (1) Typ 40 IOFF Max 24 5 70 Units V mA μs - 5 - 6.9 mA 12 0.1 260 - 0.3 340 7.5 17 1 - mA us kHz µs - 7.5 - µs - ±3.3 - µs 30 50 - kHz VUVL - - 2.7 V tUVL - 1 - µs - 190 180 - 0.8 1 °C °C mA mA fSW TSDON TSDOFF ITP IDDREV RTH From 10% to 90%, no bypass capacitor B > 3*BOP, Average value for 1000 successive switching events @1kHz B > 3*BOP, Over 1000 successive switching events @1kHz B > 3*BOP Junction temperature Junction temperature Thermal Protection activated VDD = -16V Single layer (1S) Jedec board, zero LFPM 300 °C/W 1 Typical values are defined at TA = +25ºC and VDD = 12V 2 The Power-On Time represents the time from reaching VDD = 2.7V to the first refresh of the supply current state. 3 Power-On Slew Rate should not be critical for the proper device start-up. 4 Delay Time is the time from magnetic threshold reached to the start of the supply current switching 5 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses 390109224108 Rev. 1 Page 4 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 5 Magnetic Specifications Magnetic & Temperature Coefficient Option Code Combination Medium Sensitivity + Flat TC match Test Conditions TJ = -40°C TJ = 25°C TJ = 150°C Operating Point BOP (mT) Release Point BRP (mT) Min Typ Max Min Typ Max 12 17 22.8 11.4 15.4 21.4 14.5 17 19.5 13 15.4 17.8 12 17 22.8 11.4 15.4 21.4 Temperature Coefficient o (ppm/ C) Typ 0 Table 1: Magnetic Switching Points & Temperature Coefficient combination Temperature coefficient is calculated using the following formula: BOPT 2 BOPT 1 *106 , ppm / o C ; T1 25o C ; T2 150o C BOP 25 o C T2 T1 6 Magnetic Behaviour 6.1 Unipolar sensor Output polarity Direct Pole Active South pole Magnetic pole facing the branded/top side of the package Current level IDD switches to High IDD switches to Low IDD = ION IDD = IOFF 0mT BRP BOP Flux density Figure 1 – Inverted South Pole Active 390109224108 Rev. 1 Page 5 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 7 Performance Graphs 7.1 BOP and BRP vs. TJ 7.2 BOP and BRP vs. VDD 7.3 IOFF vs. Tj 7.4 IOFF vs. VDD 7.5 ION vs.TJ 7.6 ION vs VDD 390109224108 Rev. 1 Page 6 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 7.7 VDD derating SE package 390109224108 Rev. 1 Page 7 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 8 Application Information 8.1 Typical Automotive Application Circuit ECU MLX92221 VDD C1 10nF VCC TEST Notes: 1. For proper operation, a 10nF bypass capacitor should be placed as close as possible to the VDD and ground(GND) pin. For complete emissions protection a C1 = 68nF is recommended. 2. The TEST pin is to be left open or connected to GND. GND VHSENSE RSENSE 100 8.2 Automotive and Harsh, Noisy Environments Application Circuit 8.3 Strobbing VDD application (used for reduced self-heating) ECU ECU D1 (optional, see Note2) VCC C1 68nF MLX92221 VDD (optional, see Note3) VHSENSE C1 68nF VCC TEST DZ1 GND TEST GND VHSENSE RSENSE 100 RSENSE 100 Notes: 1. For proper operation , a 10nF to 100nF bypass capacitor should be placed as close as possible to the V DD and ground pin . 2. The device could tolerate negative voltage down to - 24V , so i f negative transients over supply line V PEAK< -29V are expected , usage of the diode D 1 is recommended . Otherwise only R SENSEis sufficient . When selecting the resistor RSENSE, three points are important : - the resistor has to limit IDD/IDDREV to 50mA maximum - the resistor has to withstand the power dissipated in both over voltage 2 conditions (VRSENSE /R SENSE) - the resulting device supply voltage V DD has to be higher than V DD min (VDD = VCC – R SENSE.IDD) 3. The device could tolerate positive supply voltage up to +27V (until the maximum power dissipation is not exceeded ) , so if positive transients over supply line with VPEAK> 32 V are expected , usage a zener diode DZ 1 is recommended . The R SENSE-DZ1 network should be sized to limit the voltage over the device below the maximum allowed. 390109224108 Rev. 1 MLX92221 VDD VDD South Pole 12 V ON phase (1ms) IDD weak South or B = null OFF phase (1s) t IONtyp Valid IDD state Valid IDD state IOFFtyp tON tON t Notes : 1. Given strobe timing is exemplary only . The output response is for sensor type MLX 92221xxx -xLxS . 2. For proper operation , a 10nF to 100nF bypass capacitor should be placed as close as possible to the V DD and ground pin . Page 8 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 9 Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices) IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices) EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. http://www.melexis.com/Assets/Soldering-Application-Note-and-Recommendations-5446.aspx Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 10 ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 390109224108 Rev. 1 Page 9 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 11 SE (TSOT-3L) Package Information 2.75 BSC 1.00 MAX 1.60 BSC 0.88 - 0.03 SEATING PLANE +0.02 see note 2 +0.025 0.075 - 0.050 1. All dimensions are in millimeters 2. Outermost plastic extreme width does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.15mm per side. 1.90 BSC 0.30 0.45 0.95 BSC see note 3 2.90 BSC Notes: 3. Outermost plastic extreme length does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.25mm per side. 4. The lead width dimension does not include dambar protrusion. Allowable dambar protrusion shall be 0.07mm total in excess of the lead width dimension at maximum material condition. 0.50 BSC 5. Dimension is the length of terminal for soldering to a substrate. TOP VIEW SIDE VIEW WITH PLATING 0.10 R. MIN. 7. Formed lead shall be planar with respect to one another with 0.076mm at seating plane. BASE METAL 0.15 0.20 12° REF. TYP. 6. Dimension on SECTION B-B’ applies to the flat section of the lead between 0.08mm and 0.15mm from the lead tip. ~ 0.10 R. MIN. 0.40+/-0.10 SEATING PLANE +0.05 0.35 - 0.10 B 0.30 0.45 see note 5 0.575 REF. +0.023 4°+/-4 TBD 0.127 - 0.007 0.20 B’ Marking: SECTION B-B’ see note 6 END VIEW Hall plate location 1.51 0.80 0.28 Notes: 1. All dimensions are in millimeters Package line TOP VIEW SE Pin № Name Type 1 VDD Supply 2 TEST I/O 3 GND Ground Table 2: SE Package pinout END VIEW Function Supply Voltage pin Analog & Digital I/O Ground pin Note: Test pin to be left open or connected to GND in the application 390109224108 Rev. 1 Page 10 of 11 March/12 MLX92241LSE-AAA-008 2-Wire Hall Effect Switch 12 Disclaimer Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with Melexis for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by Melexis for each application. The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services. © 2012 Melexis NV. All rights reserved. For the latest version of this document, go to our website at www.melexis.com Or for additional information contact Melexis Direct: Europe, Africa: Americas: Asia: Phone: +32 1367 0495 E-mail: [email protected] Phone: +1 248-306-5400 E-mail: [email protected] Phone: +32 1367 0495 E-mail: [email protected] ISO/TS 16949 and ISO14001 Certified 390109224108 Rev. 1 Page 11 of 11 March/12