MELEXIS MLX92221LSE-AAA-002

MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
Features and Benefits
Application Examples
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Wide operating voltage range: from 2.7V to 24V
Very wide range for magnetic sensitivity
Chopper-stabilized amplifier stage
Programmable Built-in negative temperature coefficient
Reverse Supply Voltage Protection
Under-Voltage Lockout Protection
Thermal Protection
High ESD rating / Excellent EMC performance
Thin SOT23 3L Green Compliant package
Automotive, Consumer and Industrial
Wiper motor
Window lifter
Doorlock
Seatbelt buckle
Seat positioning
Sunroof/Tailgate opener
Electrical power steering
Ordering Information
Part No.
MLX92221LSE-AAA-002-RE
Temperature Code
L (-40°C to 150°C)
VDD
UnderVoltage
Lockout
TEST
Temperature
Compensation
Switched
Hall
Plate
Bop/Brp
reference
Thermal
Protection
In an event of a drop below the minimum supply voltage
during operation, the under-voltage lock-out protection
will automatically freeze the device, preventing the
electrical perturbation to affect the magnetic
measurement circuitry. The output current state is
therefore only updated based on a proper and accurate
magnetic measurement result.
Output
Current Sink
CDS
Amplifier
Control
Trimming
Register
GND
2 General Description
The Melexis MLX92221 is the new generation Halleffect switch designed in mixed signal submicron
CMOS technology.
The device integrates a voltage regulator, Hall sensor
with advanced offset cancellation system and a current
sink-configured output driver, all in a single package.
Based on a brand new platform, the magnetic core is
using an improved offset cancellation system allowing
faster and more accurate processing while being
temperature insensitive and stress independent. In
addition a temperature coefficient is implemented to
compensate the natural behaviour of certain types of
magnets becoming weaker with rise in temperature.
390109222102 Rev. 1
Comment
RE (Reel) - BHFS
The included voltage regulator operates from 2.7 to
24V, hence covering a wide range of applications. With
the built-in reverse voltage protection, a serial resistor
or diode on the supply line is not required so that even
remote sensors can be specified for low voltage
operation down to 2.7V while being reverse voltage
tolerant.
1 Functional Diagram
Voltage Regulator
with Reverse Polarity
Protection
Package Code
SE (TSOT-3L)
The two-wire interface not only saves one wire, but also
allows implementation of diagnostic functions as
reverse polarity connection and malfunction detection.
The on-chip thermal protection also switches off the
output if the junction temperature increases above an
abnormally high threshold. It will automatically recover
once the temperature decreases below a safe value.
With switching magnetic characteristics the supply
current state is turned high by a sufficiently strong field
facing the package branded side. Toggling the state of
the supply current from high to low is possible by
applying low or no magnetic field.
The MLX92221 is delivered in a Green and RoHS
compliant Plastic Single-in-Line (TO-92 flat) for throughhole mount or PCB-less design or in 3-pin Thin Small
Outline Transistor (TSOT) for surfacemount process
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
Table of Contents
1 Functional Diagram .................................................................................................................... 1
2 General Description .................................................................................................................... 1
3 Absolute Maximum Ratings ....................................................................................................... 3
4 General Electrical Specifications ............................................................................................... 4
5 Magnetic Specifications ............................................................................................................. 5
6 Magnetic Behaviour .................................................................................................................... 5
6.1 Latch sensor .............................................................................................................................................................. 5
7 Performance Graphs................................................................................................................... 6
7.1 BOP and BRP vs. TJ ..................................................................................................................................................... 6
7.2 BOP and BRP vs. VDD ................................................................................................................................................... 6
7.3 IOFF vs. Tj ................................................................................................................................................................... 6
7.4 IOFF vs. VDD................................................................................................................................................................. 6
7.5 ION vs.TJ ..................................................................................................................................................................... 6
7.6 ION vs VDD ................................................................................................................................................................. 6
7.7 VDD derating SE package ......................................................................................................................................... 7
8 Application Information .............................................................................................................. 8
8.1 Typical Automotive Application Circuit ....................................................................................................................... 8
8.2 Automotive and Harsh, Noisy Environments Application Circuit ................................................................................ 8
8.3 Strobbing VDD application (used for reduced self-heating) ....................................................................................... 8
9 Standard information regarding manufacturability of Melexis products with different
soldering processes ...................................................................................................................... 9
10 ESD Precautions ....................................................................................................................... 9
11 SE (TSOT-3L) Package Information ....................................................................................... 10
12 Disclaimer................................................................................................................................ 11
390109222102 Rev. 1
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2-Wire Hall Effect Latch
3 Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Supply Voltage
(1, 2)
VDD
+27V
V
Supply Current
(1, 2, 3)
IDD
+20
mA
Supply Current
(1, 4, 3)
IDD
+50
mA
Reverse Supply Voltage
(1, 2)
VDDREV
-24
V
Reverse Supply Current
(1, 2, 5)
IDDREV
-20
mA
Reverse Supply Current
(1, 4, 5)
IDDREV
-50
mA
TJ
+165
C
-
3000
V
-
400
V
-
1000
V
B
Unlimited
mT
Maximum Junction Temperature
ESD Sensitivity – HBM
ESD Sensitivity – MM
(6)
(7)
(8)
ESD Sensitivity – CDM
(9)
Magnetic Flux Density
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability.
1
The maximum junction temperature should not be exceeded
For maximum 1 hour
Including current through protection device
4
For maximum 500ms
5
Through protection device
6
For 1000 hours.
7
Human Model according AEC-Q100-002 standard
8
Machine Model according AEC-Q100-003 standard
9
Charged Device Model according AEC-Q100-011 standard
2
3
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
4 General Electrical Specifications
DC Operating Parameters VDD = 3.5 to 24V, TJ = -40°C to 165°C (unless otherwise specified)
Parameter
Supply Voltage
Start-Up Supply Current
Power-On Time (2,3)
Power-On State
Symbol
VDD
ISTART
tON
-
OFF Supply Current
IOFF
ON Supply Current
Supply Current Rise/Fall Time
Chopping Frequency
Refresh Period
ION
tRISE/FALL
fCHOP
tPER
Delay time (4)
tD
Output Jitter (p-p)
tJITTER
Maximum Switching
Frequency (5)
Under-voltage Lockout
Threshold
Under-voltage Lockout
Reaction time
Thermal Protection Threshold
Thermal Protection Release
Safe Mode Supply Current
Reverse Supply Current
TSOT Package Thermal
Resistance
Test Conditions
Operating
VDD = 5V, dVDD/dt > 2V/us
Supply Current state after tON, B=null
Min
2.7
1.5
-
(1)
Typ
40
IOFF
Max
24
5
70
Units
V
mA
μs
-
5
-
6.9
mA
12
0.1
260
-
0.3
340
7.5
17
1
-
mA
us
kHz
µs
-
7.5
-
µs
-
±3.3
-
µs
30
50
-
kHz
VUVL
-
-
2.7
V
tUVL
-
1
-
µs
-
190
180
-
0.8
1
°C
°C
mA
mA
fSW
TSDON
TSDOFF
ITP
IDDREV
RTH
From 10% to 90%, no bypass capacitor
B > 3*BOP, Average value for 1000
successive switching events @1kHz
B > 3*BOP, Over 1000 successive
switching events @1kHz
B > 3*BOP
Junction temperature
Junction temperature
Thermal Protection activated
VDD = -16V
Single layer (1S) Jedec board, zero
LFPM
300
°C/W
1 Typical values are defined at TA = +25ºC and VDD = 12V
2 The Power-On Time represents the time from reaching VDD = 2.7V to the first refresh of the supply current state.
3 Power-On Slew Rate should not be critical for the proper device start-up.
4 Delay Time is the time from magnetic threshold reached to the start of the supply current switching
5 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
5 Magnetic Specifications
Magnetic &
Temperature
Coefficient Option
Code Combination
TJ = -40°C
TJ = 25°C
TJ = 150°C
High Sensitivity +
NdFeB TC match
Operating Point
BOP (mT)
Test Conditions
Release Point
BRP (mT)
Temperature
Coefficient
o
(ppm/ C)
Min
Typ
Max
Min
Typ
Max
Typ
4.1
4.1
1.8
6.8
6
4.5
9.6
7.9
7.1
-9.6
-7.9
-7.1
-6.8
-6
-4.5
-4.1
-4.1
-1.8
-2000
Table 1: Magnetic Switching Points & Temperature Coefficient combination
Temperature coefficient is calculated using the following formula:
BOPT 2 BOPT 1
*106 , ppm / o C ; T1 25o C ; T2 150o C
BOP 25 o C T2 T1
6 Magnetic Behaviour
6.1 Latch sensor
Parameter
Option 1
Pole Active
South
Note: Latch sensor are inherently Direct South or Direct North Pole Active only.
Current level
IDD = ION
IDD switches to High
IDD switches to Low
IDD = IOFF
BRP
0mT
BOP
Flux density
Fig.1 –South Pole Active
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
7 Performance Graphs
7.1 BOP and BRP vs. TJ
7.2 BOP and BRP vs. VDD
7.3 IOFF vs. Tj
7.4 IOFF vs. VDD
7.5 ION vs.TJ
7.6 ION vs VDD
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
7.7 VDD derating SE package
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
8 Application Information
8.1 Typical Automotive Application Circuit
ECU
MLX92221
VDD
C1
10nF
VCC
TEST
Notes:
1. For proper operation, a 10nF bypass capacitor should be placed
as close as possible to the VDD and ground(GND) pin. For complete
emissions protection a C1 = 68nF is recommended.
2. The TEST pin is to be left open or connected to GND.
GND
VHSENSE
RSENSE
100
8.2 Automotive and Harsh, Noisy
Environments Application Circuit
8.3 Strobbing VDD application (used for
reduced self-heating)
ECU
ECU
D1
(optional,
see Note2)
VCC
C1
68nF
MLX92221
VDD
(optional,
see Note3)
VHSENSE
VCC
TEST
DZ1
GND
TEST
GND
VHSENSE
RSENSE
100
RSENSE
100
Notes:
1. For proper operation , a 10nF to 100nF bypass capacitor should be placed as close
as possible to the V DD and ground pin .
2. The device could tolerate negative voltage down to - 24V , so i f negative transients
over supply line V PEAK< -29V are expected , usage of the diode D 1 is recommended .
Otherwise only R SENSEis sufficient .
When selecting the resistor RSENSE, three points are important :
- the resistor has to limit IDD/IDDREV to 50mA maximum
- the resistor has to withstand the power dissipated in both over voltage
conditions (VRSENSE2/R SENSE)
- the resulting device supply voltage V DD has to be higher than V DD min
(VDD = VCC – R SENSE.IDD)
3. The device could tolerate positive supply voltage up to +27V (until the maximum
power dissipation is not exceeded ) , so if positive transients over supply line with
VPEAK> 32 V are expected , usage a zener diode DZ 1 is recommended . The R SENSE-DZ1
network should be sized to limit the voltage over the device below the maximum
allowed.
390109222102 Rev. 1
MLX92221
VDD
C1
68nF
VDD
South Pole
12 V
ON phase
(1ms)
IDD
weak South or B = null
OFF phase
(1s)
t
IONtyp
Valid IDD
state
Valid IDD
state
IOFFtyp
tON
tON
t
Notes :
1. Given strobe timing is exemplary only . The output response is for sensor type
MLX 92221xxx -xLxS .
2. For proper operation , a 10nF to 100nF bypass capacitor should be placed as
close as possible to the V DD and ground pin .
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2-Wire Hall Effect Latch
9 Standard information regarding manufacturability of Melexis products with
different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level
according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon
with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive
strength between device and board.
http://www.melexis.com/Assets/Soldering-Application-Note-and-Recommendations-5446.aspx
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on
qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain
Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx
10 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
11 SE (TSOT-3L) Package Information
2.75 BSC
1.00 MAX
1.60 BSC
0.88 - 0.03
SEATING PLANE
+0.02
see note 2
+0.025
0.075 - 0.050
1. All dimensions are in millimeters
2. Outermost plastic extreme width does not include mold flash or
protrusions. Mold flash and protrusions shall not exceed 0.15mm
per side.
1.90 BSC
0.30
0.45
0.95 BSC
see note 3
2.90 BSC
Notes:
3. Outermost plastic extreme length does not include mold flash or
protrusions. Mold flash and protrusions shall not exceed 0.25mm
per side.
4. The lead width dimension does not include dambar protrusion.
Allowable dambar protrusion shall be 0.07mm total in excess of the
lead width dimension at maximum material condition.
0.50 BSC
5. Dimension is the length of terminal for soldering to a substrate.
TOP VIEW
SIDE VIEW
WITH PLATING
0.10 R.
MIN.
7. Formed lead shall be planar with respect to one another with
0.076mm at seating plane.
BASE METAL
0.15
0.20
12° REF.
TYP.
6. Dimension on SECTION B-B’ applies to the flat section of the lead
between 0.08mm and 0.15mm from the lead tip.
~
0.10 R.
MIN.
0.40+/-0.10
SEATING PLANE
+0.05
0.35 - 0.10
B
0.30
0.45
see note 5
0.575 REF.
+0.023
4°+/-4
TBD
0.127 - 0.007
0.20
B’
Marking:
SECTION B-B’
see note 6
END VIEW
Hall plate location
1.51
0.80
0.28
Notes:
1. All dimensions are in millimeters
Package line
TOP VIEW
SE Pin №
Name
Type
1
VDD
Supply
2
TEST
I/O
3
GND
Ground
Table 2: SE Package pinout
END VIEW
Function
Supply Voltage pin
Analog & Digital I/O
Ground pin
Note: Test pin to be left open or connected to GND in the application
390109222102 Rev. 1
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MLX92221LSE-AAA-002
2-Wire Hall Effect Latch
12 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of
Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth
herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the right to
change specifications and prices at any time and without notice. Therefore, prior to designing this product into a
system, it is necessary to check with Melexis for current information. This product is intended for use in normal
commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not
recommended without additional processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to
recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of
profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in
connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or
liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services.
© 2012 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Africa:
Americas:
Asia:
Phone: +32 1367 0495
E-mail: [email protected]
Phone: +1 248-306-5400
E-mail: [email protected]
Phone: +32 1367 0495
E-mail: [email protected]
ISO/TS 16949 and ISO14001 Certified
390109222102 Rev. 1
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