MPS MP6922AGSE

MP6922A
Dual, Fast-Turn–Off, Intelligent Rectifier
The Future of Analog IC Technology
DESCRIPTION
FEATURES
The MP6922A is a dual, fast-turn–off, intelligent
rectifier for synchronous rectification in LLC
resonant converters.


The IC drives two N-channel MOSFETs and
regulates their forward voltage drop to about
30mV and turns it off before the switching
current goes negative.





MP6922A has a light-load function to latch off
the gate driver under light-load conditions, thus
limiting the current to below 600μA.


Works with Both Standard and Logic-Level
MOSFETs
Compatible with Energy Star’s 0.5W
Standby Requirements
VDD Range from 8V to 24V
Fast Turn-Off Total Delay of 20ns
Reverse-Current–Protection Function
Maximum Switching Frequency of 300kHz
<600μA Quiescent Current in Light-Load
Mode
Supports CCM, CrCM and DCM Operation
Available in SOIC8E, SOIC8, and SOIC14
packages
The MP6922A’s fast turn-off enables both
continuous-conduction
mode
and
discontinuous-conduction mode. An internal
reverse-current protection function ensures safe
MOSFET operation under high-frequency
continuous-current conditions.
APPLICATIONS
MP6922A requires a minimal number of readilyavailable standard external components and is
available in SOIC8E, SOIC8, and SOIC14
packages.
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green
status, please visit MPS website under Products, Quality Assurance page.



AC-DC Adapters
LCDs & PDP TVs
Telecom SMPS
“MPS” and “The Future of Analog IC Technology” are registered trademarks of
Monolithic Power Systems, Inc.
TYPICAL APPLICATION
SOIC8
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
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© 2012 MPS. All Rights Reserved.
1
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
SOIC8E
SOIC14
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
2
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
ORDERING INFORMATION
Part Number
MP6922AGSE*
MP6922AGN**
MP6922AGS***
Package
SOIC8
SOIC8E
SOIC14
Top Marking
MP6922A
MP6922A
MP6922A
*For Tape & Reel, add suffix –Z (e.g. MP6922AGSE–Z);
**For Tape & Reel, add suffix –Z (e.g. MP6922AGN–Z);
***For Tape & Reel, add suffix –Z (e.g. MP6922AGS–Z);
PACKAGE REFERENCE
ABSOLUTE MAXIMUM RATINGS (1)
Recommended Operation Conditions
VDD to VS1,VS2, VSS ........................-0.3V to +26V
PGND to VS1,VS2, VSS ...................-0.3V to +0.3V
VG1 to VS1, VSS ................................. -0.3V to VDD
VG2 to VS2, VSS ................................. -0.3V to VDD
VD1 to VS1, VSS .............................-0.7V to +180V
VD2 to VS2, VSS .............................-0.7V to +180V
LL, EN to VS1,VS2, VSS ..................-0.3V to +6.5V
Maximum Operating Frequency............ 300 kHz
(2)
Continuous Power Dissipation .. (TA = +25°C)
SOIC8 ........................................................ 1.4W
SOIC8E ...................................................... 2.5W
SOIC14 ...................................................... 1.5W
Junction Temperature ...............................150°C
Lead Temperature (Solder).......................260°C
Storage Temperature .............. -55°C to +150°C
VDD to VS1,VS2, VSS............................... 8V to 24V
Operating Junction Temp. (TJ). -40°C to +125°C
Thermal Resistance
(4)
θJA
(3)
θJC
SOIC8 ..................................... 90 ...... 45 ... °C/W
SOIC8E ................................... 50 ...... 10 ... °C/W
SOIC14 ................................... 86 ...... 38 ... °C/W
Notes:
1) Exceeding these ratings may damage the device.
2) TA=+25℃. The maximum allowable power dissipation is a
function of the maximum junction temperature TJ (MAX), the
junction-to-ambient thermal resistance θJA, and the ambient
temperature TA. The maximum allowable continuous power
dissipation at any ambient temperature is calculated by PD
(MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable
power dissipation will cause excessive die temperature, and
the regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB. Without heatsink.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
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© 2012 MPS. All Rights Reserved.
3
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
ELECTRICAL CHARACTERISTICS
VDD = 12V, -40°C ≤TJ≤ 125°C, unless otherwise noted.
Parameter
VDD Voltage Range
Symbol Conditions
VDD UVLO Threshold
Operating Current
ICC
Shutdown Current
Light-Load Mode Current
Thermal Shutdown
Thermal Shutdown hysteresis
Rising
Hysteresis
CLOAD=5nF, FSW=100kHz
CLOAD=10nF, FSW=100kHz
VDD=20V, EN=0V
Rising
Hysteresis
Rising
Hysteresis
Enable Shutdown Threshold
Enable UVLO Threshold
CLOAD=5nF
τDon
CLOAD=10nF
Turn-on delay
VG1,2 (High)
Turn-Off Threshold (VS1,2VD1,2)
Turn-Off Propagation Delay
24
27
2.3
15
τDon
τMIN
τOFF
Typ
1.1
Internal Pull-up Current on
EN
CONTROL CIRCUITRY SECTION
VS1,2 –VD1,2 Forward Voltage
Vfwd
Input Bias Current on VD1,2 pin
Minimum ON-Time
Minimum OFF-Time
Light-Load–Enter Delay
Light-Load–Enter Pulse Width
Light-Load Turn-On Pulse
Width Hysteresis
Light-Load–Enter OFF Period
Width
Light-Load Exit-Pulse Width
Threshold (VD1,2-VS1,2)
Light-load Enter-Pulse Width
Threshold (VG1,2-VS1,2)
Reverse-Current–Protection
Threshold
Reverse-Current–Protection
Latch Time
GATE DRIVER SECTION
VG1,2 (Low)
Min
8
4.8
0.5
12
-20°C≤TJ≤125°C
-40°C≤TJ<-20°C
-20°C≤TJ≤125°C
-40°C≤TJ<-20°C
VD1,2 = 180V
CLOAD = 5nF
6.0
1
18
Max
24
7.0
1.5
23
Units
V
V
V
mA
31
600
600
150
30
1.5
0.2
3
0.2
2.0
0.45
3.6
0.45
mA
µA
µA
°C
°C
V
V
V
V
10
16
µA
30
150
250
250
350
45
200
mV
300
1.5
µA
µs
µs
µs
µs
RLL=100kΩ
RLL=100kΩ
τLL-H
RLL=100kΩ
0.2
µs
τLL-OFF
RLL=100kΩ
50
µs
-450
VLL-GS
-300
260
ns
τLL-Delay
τLL
VLL-DS
80
1
1.6
160
2.2
ns
-140
1.0
mV
V
VRCP
2.5
3
3.5
V
τRCP
80
150
230
µs
13
14.5
VDD-2.2
0.1
16
V
V
ILOAD=1mA
VDD >16V
VDD <16V
VD1,2= VSS
-30
mV
15
ns
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
4
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
ELECTRICAL CHARACTERISTICS (continued)
VDD = 12V, -40°C ≤TJ≤ 125°C, unless otherwise noted.
Parameter
Turn-Off Total Delay
Pull-Down Impedance
Pull-Down Current
Symbol Conditions
VSS,
VD1,2=
τDoff
RGATE=0Ω
VD1,2=
VSS,
RGATE=0Ω
3V <VG1,2<10V
Min
Typ
Max
Units
CLOAD=5nF,
50
75
ns
CLOAD=10nF,
50
75
ns
1
3
2
Ω
A
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
5
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
PIN FUNCTIONS
Pin #
(SOIC8)
1
Pin #
(SOIC8E)
1
Pin #
(SOIC14)
2
3
2
3
EN
4
6
7
8
6
7
8
9
12
13
VD2
VS2
VS1
VD1
VDD
VG1
1,14
PGND
-
3
4
5
6
7
8
EXPOSED
PAD
-
5,10
NC
-
-
4
LL
5
-
11
-
RCP
VSS
2
Name
VG2
Description
MOSFET 2 Gate Driver Output.
Enable Pin. Enables the internal IC logic when the EN pin
voltage exceeds the EN shutdown threshold; the gate driver
remains latched until the EN voltage exceeds the EN UVLO
threshold.
MOSFET 2 Drain Voltage Sense.
Source pin used as reference for VD2.
Source pin used as reference for VD1.
MOSFET 1 Drain Voltage Sense.
Supply Voltage.
MOSFET 1 Gate Driver Output.
Power Ground. Power switch return.
No Connection.
Light-Load–Timing Set. Connect a resistor to set the light-load
timing.
Reverse Current Protection. Internal 5V reference.
Common Source. Used as reference for both channels.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
6
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
TYPICAL CHARACTERISTICS
6.15
450
260
6.1
440
255
6.05
430
265
6
250
420
5.95
245
410
5.9
240
400
5.85
235
5.8
390
230
5.75
380
225
-50 -30 -10 10 30 50 70 90 110130150
5.7
-50 -30 -10 10 30 50 70 90 110 130150
370
-50 -30 -10 10 30 50 70 90 110130150
250
350
50
45
300
200
40
250
35
30
150
200
100
150
20
100
15
50
25
10
50
0
5
0
0
-50
0
50
100
150
-50
50
45
35
40
34
0
50
100
150
0
50
100
150
-50
0
50
100
150
35
30
33
25
20
32
15
10
31
5
0
-50
0
50
100
150
30
-50
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
7
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VDD = 12V, unless otherwise noted.
VDS1
20V/div.
VDS2
20V/div.
VDS1
20V/div.
VGS1
5V/div.
VGS2
5V/div.
VGS1
5V/div.
ISD1
5A/div.
ISD2
2A/div.
ISD1
5A/div.
VDS2
20V/div.
VDS1
20V/div.
VGS2
5V/div.
VGS1
5V/div.
ISD2
5A/div.
ISD1
5A/div.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
8
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
BLOCK DIAGRAM
Figure 1: Functional Block Diagram
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
9
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
OPERATION
The MP6922A operates in discontinuousconduction mode (DCM), continuous-conduction
mode (CCM), and critical conduction mode
(CrCM) condition. Operating in either DCM or
CrCM, the control circuitry controls the gate in
forward mode; it turns the gate off when the
MOSFET current is low. In CCM, the control
circuitry turns off the gate during very fast
transients.
Blanking
The control circuitry contains a blanking function
that ensure that when the MOSFET turns
ON/OFF, the MOSFET remains in that state for
~1μs, which determines the minimum ON-time.
During the turn-on blanking period, the turn-off
threshold is not totally blanked, but changes to
~+100mV (instead of +30mV). This ensures that
the part can always turn OFF even during the
turn-on blanking period (albeit slower, so avoid
setting the synchronous period to less than 1μs
at CCM condition in the LLC converter to
eliminate shoot-through).
VD Clamp
The MP6922A uses a high-voltage JFET at its
input because VD1,2 can go as high as 180V.
Connect a small resistor between the VD1,2 pin
and the external MOSFET drain to avoid
excessive currents when VG goes below -0.7V.
Under-Voltage Lockout (UVLO)
When VDD goes below the UVLO threshold, the
part enters sleep mode and a 10kΩ resistor pulls
down VG.
Enable Pin
If EN is pulled low, the part enters sleep mode.
Thermal Shutdown
If the junction temperature of the IC exceeds
150°C, VG is pulled low and the part stops
switching. The part resumes normal operation
after the junction temperature has dropped to
120°C.
Turn-On Phase
VDS (VD–VSS) goes negative (<-500mV) when the
switch current flows through the MOSFET’s body
diode. If VDS is much lower than the turn-on
threshold of the control circuitry (-30mV), then
the MOSFET turns on after about 200ns turn-on
delay (Figure 2).
Triggering the turn-on threshold (-30mV) causes
the circuit to add a blanking time (minimum ontime 1μs), during which the turn-off threshold
changes from +30V to +100mV. This blanking
time avoids erroneous triggering caused by
ringing on the synchronous power switch.
0mV
-30mV
tDon
VDS
VGATE
tDoff
2V
Figure 2: Turn-On and Turn-Off delay
Conducting Phase
When the MOSFET turns ON, VDS (-ISD×RDS(ON))
rise relative to the switch current (ISD) drop. When
VDS rises above the turn-on threshold (–30mV),
the control circuitry stops pulling up the gate
driver and the MOSFET driver voltage drops,
which increases the MOSFET’s RDS(ON). This
adjusts VDS (-ISD×RDS(ON)) to around -30mV even
when the switch current ISD is fairly small, and
can prevent the internal driver from triggering
until the current through the MOSFET has
dropped to near zero.
Turn-Off Phase
When VDS rises to trigger the turn-off threshold
(30mV), the control circuitry pulls down the driver
switch voltage after a 20ns turn-off delay (shown
in Figure 2). Similarly, a 1.6μs blanking time
occurs after the switch turns off, during which the
MOSFET does not turn on to avoid erroneous
triggering.
Figure 3 shows the MP6922A operating under a
heavy-load. The high current initially saturates
the driver voltage. After VDS goes above –30mV,
the driver voltage decreases to adjust the VDS to
around –30mV.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
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© 2012 MPS. All Rights Reserved.
10
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
Figure 4 shows the MP6922A operating at lightload. The low current prevents the driver voltage
from saturating but decreases when the
synchronous power switch turns on and adjusts
VDS.
Vds
0mV
-30mV
After entering light-load mode, the MP6922A
monitors the MOSFET’s body diode conducting
period by sensing VDS (when VDS exceeds –
300mV (VLL-DS), MP6922A treats the the
MOSFET’s body-diode conducting period as
finished). If the MOSFET’s body diode
conducting period exceeds 2.4μs (τLL+τLL-H), lightload mode ends and the MOSFET unlatches to
restart the synchronous rectification.
For the SOIC14 package. the MP6922A has an
LL pin that allows τLL to be adjusted by an
external resistor:
Isd
LL  2.2s 
Vgs
Figure 3: Synchronous Rectification
Operation at Heavy Load
Vds
0mV
-30mV
RLL
100k
Latch Off during Burst Operation
The IC also monitors the synchronous MOSFET
OFF period. If the OFF period exceeds the lightload–enter OFF period width (τLL-OFF), the
MP6922A enters light-load mode and latches off
the gate driver.
The gate driver is unlatched when the drainsource voltage of the synchronous MOSFET VDS
drops below –30mV.
Isd
Vgs
Figure 4: Synchronous Rectification
Operation at Light Load
Light-Load Latch-Off Function
The gate driver of MP6922A is latched to limit
driver losses under light-load condition to
improve light-load efficiency.
Normal Operation Latch Off
When the MOSFET’s switching-cycle conducting
period falls below 2.2μs (τLL), the MP6922A
enters light-load mode and latches off the
MOSFET after a 160μs delay (light-load-enter
delay, τLL-Delay)
Reverse Current–Protection Function
When the LLC system operates in CCM at a very
high frequency, the synchronous current may
reverse before the IC turns off the gate driver,
which can lead to shoot-through (in centertapped outputs with full-wave rectification
topologies). The MP6922A has a protection
function to latch off the gate driver when the
current reverses before the driver signal is pulled
low.
When the synchronous current reverses, the high
spike can be observed between the MOSFET’s
drain/source. The MP6922A monitors the voltage
through the RCP pin using a voltage divider.
When the voltage of RCP pin exceeds VRCP,
MP6922A latches the driver signal of both
channels for ~150μs (τRCP) to protect the
synchronous MOSFET. At the end of τRCP,
MP6922A restarts the synchronous rectification.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
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© 2012 MPS. All Rights Reserved.
11
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
TYPICAL APPLICATION CIRCUIT
CN1
1
F1
2
SS-5-1A
R2 2.21K
R3
820K
R4
0
C3
470pF
1
R5
3.57K
2
C5
AGND
100uF
SS
TIMER
CT
FSET
BURST
CS
BO
C6
100uF
U1
R6
1M
R7
10K
BST
HG
SW
N.C.
Vcc
LG
GND
PFC
C7
16
100n
15
14
13
12
11
10
9
R8
1M
2
1
1
1
R12 10K
1
R13
1
R11 10K
D3
C8
2.2uF
AGND
R14
1
M2
M1
CX1
120nF
R16 1K
R15
1
C9
100uF
R17
51
4
L1
D4
5
PGND
VG2
U6
2
CS
50uH
C10
10nF
1
2
1
1
800uH
2
3
4
VG1
VDD
T1
8
7
8
7
6
5
R18
100K
Vs1
Vs2
R21
1K
R19
10K
R20
2K
R23 10
M3
C13 2.2nF
R26 10
D5
2
R25 10K
1
U3
2
C14 2.2nF
M4
R27 10K
R28 10
D6
VDD
VD1
VS1
VS1
Vg1
5
6
7
8
8
C22
1nF
C23
1nF
R30
137K
R29
10K
PGND
2.2uF
C15
PGND
Vg1
9 PGND
10
11
12
13
14
Vg2
VS2
PGND
RCP
VG1
NC
VG2
LL
VD1
VDD
VD2
VS1
U2
MP6922AGS
VG2
EN
VD2
VS2
MP6922AGN
VG1
VS2
NC
EN
PGND
1
R24 10
1
7
6
5
4
3
PGND 2
C11
1nF
R22
1K
Vg2
C12
1nF
PGND
1
2
3
4
C16
22nF
U4
PC817A
C17
10uF
AGND
U5
R31
3.3K
PGND
2
R32 40.2K
C19
C18
2200uF
1
C20
2200uF
R34
1K
470pF
PGND
10K
R36
R35
38.3K
R33
C21 0.1uF
1.8K
2
1
2
D1
10
D2
R10 10
2
R9
AGND
6
5
VD1
2
3
2
3
CR1
1
2
3
4
5
6
1
HR1000A
EN
VD1
VSS
4
4
1
2
LATCH
Vcc
2
C2
0.47uF
Burst
CS
7
8
3
VD2
MP6922AGS
E
Burst
1
2
1
C1
1uF
AGND
R1
9.53K
AGND
C4
10nF
AGND
PGND
4
4
3
1
3
Vg1
VD1
VS1
Vg1
VDD
VD1
VD2
Vg2
VD2
VS2
Vg2
VD2
1
2
2
1
2
3
4
Vcc
VDD
1
2
CN2
Figure 5—Synchronous Rectification in LLC with MP6922A
12
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
PACKAGE INFORMATION
SOIC8
0.189(4.80)
0.197(5.00)
0.050(1.27)
0.024(0.61)
8
5
0.063(1.60)
0.150(3.80)
0.157(4.00)
PIN 1 ID
1
0.228(5.80)
0.244(6.20)
0.213(5.40)
4
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.004(0.10)
0.010(0.25)
0.013(0.33)
0.020(0.51)
0.0075(0.19)
0.0098(0.25)
SEE DETAIL "A"
0.050(1.27)
BSC
SIDE VIEW
FRONT VIEW
0.010(0.25)
x 45o
0.020(0.50)
GAUGE PLANE
0.010(0.25) BSC
0o-8o
0.016(0.41)
0.050(1.27)
DETAIL "A"
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA.
6) DRAWING IS NOT TO SCALE.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
13
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
SOIC8E (EXPOSED PAD)
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
14
MP6922A—DUAL, FAST-TURN–OFF, INTELLIGENT RECTIFIER
SOIC14
0.338(8.55)
0.344(8.75)
0.024(0.61)
8
14
0.063
(1.60)
0.150
(3.80)
0.157
(4.00)
PIN 1 ID
0.050(1.27)
0.228
(5.80)
0.244
(6.20)
0.213
(5.40)
7
1
TOP VIEW
RECOMMENDED LAND PATTERN
0.053(1.35)
0.069(1.75)
SEATING PLANE
0.050(1.27)
BSC
0.013(0.33)
0.020(0.51)
0.004(0.10)
0.010(0.25)
SEE DETAIL "A"
SIDE VIEW
FRONT VIEW
0.010(0.25)
x 45o
0.020(0.50)
GAUGE PLANE
0.010(0.25) BSC
0o-8o
0.016(0.41)
0.050(1.27)
0.0075(0.19)
0.0098(0.25)
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AB.
6) DRAWING IS NOT TO SCALE.
DETAIL "A"
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.
MP6922A Rev. 1.02
www.MonolithicPower.com
11/30/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
15