DATA SHEET MOS INTEGRATED CIRCUIT µPD166100, 166101 N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE The µPD166100, 166101 are N-channel Low-side Driver for Solenoids and Lamp Drivers. It build in protection functions. PACKAGE DRAWING (unit: mm) FEATURES z Built in current limit and thermal shutdown circuit. 8 5 Thermal shutdown will automatically restart after the channel temperature has cool down. z Low on-state resistance: RDS(ON) = 160 mΩ (VIN = 5 V, IOUT = 0.8 A, Tch = 25°C) (8-pin SOP) 4.4 0.8 +0.10 –0.05 Small and surface mount package 6.0 ±0.3 4 5.37 Max. 0.15 µPD166101: Dual channel Low-side switch z 0.05 Min. z 1.44 1 Built in dynamic clamp circuit 1.8 Max. z 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M ORDERING INFORMATION Part Number Package µPD166100GR(20) 8-pin SOP µPD166101GR(20) 8-pin SOP BLOCK DIAGRAM IN1 OUT1 Dynamic Clamp Control Circuit ESD Over Temperature Protection Circuit Current Limit Ch1 IN2 GND1 OUT2 Dynamic Clamp Control Circuit ESD Over Temperature Protection Circuit Current Limit Ch2 Remark GND2 µPD166100: Ch1 only The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. S17476EJ1V0DS00 (1st edition) Date Published March 2005 NS CP (K) Printed in Japan 2005 µPD166100, 166101 PIN CONFIGURATION (Top View) • 8-pin SOP µPD166100GR (20), µPD166101GR (20) GND1 1 8 OUT1 IN1 2 7 OUT1 GND2Note 3 6 OUT2 Note IN2 Pin No. Note 5 OUT2 4 Symbol 1 GND1 2 IN1 Function Connected to Ground Input terminal1 (active level is high) Note 3 GND2 4 IN2 Note 5 OUT2 6 Connected to Ground Input terminal2 (active level is high) Note Output terminal2 OUT2 Note Output terminal2 7 OUT1 Output terminal1 8 OUT1 Output terminal1 Note µPD166100: 2 Note Pin No.3 to 6 are N.C. Data Sheet S17476EJ1V0DS µPD166100, 166101 ABSOLUTE MAXIMUM RATING (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Rating Unit 40 V Output voltage VOUT Input voltage VIN 7 V Negative input current IIL −10 mA Output current IOUT(DC) SELF LIMITED A/UNIT 1.5 W PD Total power dissipation Note VIN = 0 V, DC VIN = 5 V µPD166100 On-State µPD166101 2ch On-State 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Note Mounted on ceramic substrate of 20cm x 20cm x 1.1mm ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. 40 Max. Unit 60 V 100 µA 300 µA 10 µA Output clamping voltage VOUT IOUT = 1 mA, VIN = 0 V Output Off leakage current IOL VIN = VIL, VOUT = 18 V High Level Input current IIH VIN = 5.5 V, VOUT = 0 V Low Level Input current IIL VIN = 0 V, VOUT = 18 V High Level Input voltage VIH IOUT = 0.8 A, VOUT = 0.2 V Low Level Input voltage VIL VOUT = 10 V, IOUT = 1 mA 1.5 V ON-state resistance RDS(ON) VIN = 5 V, IOUT = 0.8 A 160 mΩ VIN = 3 V, IOUT = 0.8 A 195 mΩ Turn-on time ton VCC = 18 V, RL = 22 Ω, 120 µs Rise time tr VIN = 0 V to 5 V, 80 µs Turn-off time toff RIN = 10 Ω 200 µs Fall time tf 80 µs −10 3 V THI VIN = 5 V 150 °C Current limit IS VIN = 3 V 1 A Input frequency fIN Thermal shutdown Note detection temperature 1 kHz Note The low side switch is shutdown if the channel temperature exceeds thermal shutdown temperature. It will automatically restart after the channel temperature has cooled down than thermal shutdown temperature. TEST CIRCUIT µPD 166100, µPD 166101 V IN OUT IN V CC = 18 V 50% IN Wave Form 50% toff ton R L = 22 Ω OUT Wave Form GND tr tf 90% 90% 10% Data Sheet S17476EJ1V0DS 10% 3 µPD166100, 166101 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION vs. OUTPUT OFF LEAKAGE CURRENT vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2 2000 mm x 2.25 mm 2.4 2 unit 2 1.6 1 unit 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 IOL - Output Off Leakage Current - µA PT - Total Power Dissipation –W / package AMBIENT TEMPERATURE 2.8 100 VIN = VIL, VOUT = 18 V 90 80 70 60 50 40 30 20 10 0 -50 TA - Ambient Temperature - °C HIGH LEVEL INPUT CURRENT vs. INPUT VOLTAGE 150 200 AMBIENT TEMPERATURE IIH - High Level Input Current - µA IIH - High Level Input Current - µA 100 400 VOUT = 0 V 500 400 300 200 TA = 105°C 100 TA = 85°C TA = 25°C TA = −40°C 0 VIN = 5.5 V, VOUT = 0 V 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 VIN - Input Voltage - V 7 -50 8 HIGH LEVEL INPUT VOLTAGE vs. 0 50 100 150 TA - Ambient Temperature - °C 200 LOW LEVEL INPUT VOLTAGE vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE 4.0 3.0 IOUT = 0.8 A 3.5 VIL - Low Level Input Voltage - V VIH - High Level Input Voltage - V 50 HIGH LEVEL INPUT CURRENT vs. 600 3.0 2.5 2.0 1.5 1.0 0.5 IOUT = 1 mA 2.5 2.0 1.5 1.0 0.5 0.0 0.0 -50 0 50 100 150 200 -50 Data Sheet 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C 4 0 TA - Ambient Temperature - °C S17476EJ1V0DS 200 µPD166100, 166101 ON-STATE RESISTANCE vs. ON-STATE RESISTANCE vs. OUTPUT CURRENT AMBIENT TEMPERATURE 0.25 RDS(ON) - ON-State Resistance - Ω RDS(ON) - ON-State Resistance - Ω 0.25 VIN = 3 V, 5 V, TA = 25°C 0.2 0.15 VIN = 3 V 0.1 0.05 VIN = 5 V 0 VIN = 3 V, 5 V, IOUT = 0.8 A 0.2 0.15 VIN = 3 V 0.1 0.05 VIN = 5 V 0 0 0.3 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 0 50 100 150 200 TA - Ambient Temperature - °C IOUT - Output Current - A ON-STATE RESISTANCE vs. INPUT VOLTAGE RDS(ON) - ON-State Resistance - Ω 0.25 IOUT = 0.8 A 0.2 0.15 TA = 105°C TA = 85°C 0.1 TA = 25°C TA = −40°C 0.05 0 0 1 2 3 4 5 6 7 8 VIN - Input Voltage - V Data Sheet S17476EJ1V0DS 5 µPD166100, 166101 TURN-ON / TURN-OFF DELAY TIME vs. RISE TIME / FALL TIME vs. OUTPUT CURRENT 100 VIN = 5 V, VOUT = 18 V, TA = 25°C 175 150 tr / tf - Rise Time / Fall Time - µs ton / toff – Turn-On / Turn-Off Time - µs OUTPUT CURRENT 200 toff 125 100 75 50 ton 25 VIN = 5 V, VOUT = 18 V, TA = 25°C 87.5 75 62.5 50 tf 37.5 25 tr 12.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 0.1 0.2 0.3 0.4 0.7 0.8 TURN-ON / TURN-OFF DELAY TIME vs. RISE TIME / FALL TIME vs. 0.9 1 AMBIENT TEMPERATURE 100 200 VIN = 5 V, VOUT = 18 V, IOUT = 0.8 A 180 tr / tf - Rise Time / Fall Time - µs ton / toff - Turn-On / Turn-Off Delay Time - µs 0.6 IOUT - Output Current - A AMBIENT TEMPERATURE 6 0.5 IOUT - Output Current - A 160 140 120 toff 100 80 60 ton 40 20 0 -50 0 50 100 150 200 75 62.5 50 tr 37.5 tf 25 12.5 0 -50 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C Data Sheet VIN = 5 V, VOUT = 18 V, IOUT = 0.8 A 87.5 S17476EJ1V0DS 200 µPD166100, 166101 APPLICATION CIRCUIT EXAMPLE (1) Inductance load VCC µPD166100, µPD166101 Microcontroller etc IN Inductance load OUT GND GND GND (2) Lamp load VCC µPD166100, µPD166101 Microcontroller Etc. GND Caution IN Lamp load OUT GND GND This circuit diagram is a connection example, and it is not the one to mass-produce it. Data Sheet S17476EJ1V0DS 7 µPD166100, 166101 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. µPD166100 GR (20): 8-pin SOP µPD166101 GR (20): 8-pin SOP Soldering method Infrared ray reflow Soldering conditions Peak temperature of package surface: Time: Partial heating method 8 260°C, 30 seconds max (210 °C min.), Number of reflow process: Pin temperature: 300°C max, Data Sheet Symbol Heat time: IR60-00-3 3 3 seconds max (per pin) S17476EJ1V0DS - µPD166100, 166101 [ MEMO ] Data Sheet S17476EJ1V0DS 9 µPD166100, 166101 [ MEMO ] 10 Data Sheet S17476EJ1V0DS µPD166100, 166101 [ MEMO ] Data Sheet S17476EJ1V0DS 11