VND05B / VND05B (011Y) / VND05B (012Y) DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VND05B V DSS RDS(on) In (*) VCC VND05B (011Y) 40V 200mΩ 1.6A 26 V VND05B (012Y) OUTPUT CURRENT (CONTINUOUS): 9A AT Tc=85°C PER CHANNEL ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDERVOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown protects the chip from overtemperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to VCC. HEPTAWATT (vertical) HEPTAWATT (horizontal) HEPTAWATT (in-line) ORDER CODES HEPTAWATT vertical VND05B HEPTAWATT horizontal VND05B (011Y) HEPTAWATT in-line VND05B (012Y) BLOCK DIAGRAM (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) November 1999 1/11 1 VND05B / VND05B (011Y) / VND05B (012Y) ABSOLUTE MAXIMUM RATING Symbol V(BR)DSS IOUT IOUT(RMS) IR IIN -V CC ISTAT VESD PTOT Tj TSTG Parameter Drain-Source breakdown voltage Output current (continuous) at Tc=85°C RMS Output current at Tc=85°C and f > 1Hz Reverse output current at Tc=85°C Input current Reverse supply voltage Status current Electrostatic discharge (R=1.5kΩ, C=100pF) Power dissipation at Tc=25°C Junction operating temperature Storage temperature CONNECTION DIAGRAM TOP VIEW CURRENT AND VOLTAGE CONVENTIONS 2/11 1 Value 40 9 9 -9 +/- 10 -4 +/- 10 2000 59 -40 to 150 -55 to 150 Unit V A A A mA V mA V W °C °C VND05B / VND05B (011Y) / VND05B (012Y) THERMAL DATA Symbol Rthj-case Parameter Thermal resistance junction-case (MAX) Value 2.1 Unit °C/W R thj-amb Thermal resistance junction-ambient (MAX) 60 °C/W ELECTRICAL CHARACTERISTICS (8V<VCC<16V; -40°C≤Tj≤125°C; unless otherwise specified) POWER Symbol VCC In (*) R ON IS VDS(MAX) Ri Parameter Supply voltage Nominal current On state resistance Supply current Maximum voltage Drop Output to GND internal impedance Test Condit ions Tc=85°C; VDS(on)≤0.5V; VCC=13V IOUT=In; VCC=13V; Tj=25°C Off state; T j=25°C; VCC=13V IOUT=7.5A; Tj=85°C; VCC=13V Tj=25°C Min 6 1.6 0.13 Typ 13 35 1.44 Max 26 2.6 0.2 100 2.3 Unit V A Ω µA V 5 10 20 KΩ Min Typ Max Unit ROUT=5.4Ω 5 25 200 µs ROUT=5.4Ω 10 50 180 µs ROUT=5.4Ω 10 75 250 µs ROUT=5.4Ω ROUT=5.4Ω ROUT=5.4Ω 10 0.003 0.005 35 180 0.1 0.1 µs A/µs A/µs Min Typ Max 1.5 (•) 1.5 100 7 Unit V V V µA V SWITCHING Symbol td(on) (^) tr (^) td(off) (^) tf (^) (di/dt) on (di/dt) off Parameter Turn-on delay time of output current Rise time of output current Turn-off delay time of output current Fall time of output current Turn-on current slope Turn-off current slope Test Conditions LOGIC INPUT Symbol V IL VIH VI(hyst) IIN VICL Input Input Input Input Parameter low level voltage high level voltage hysteresis voltage current Input clamp voltage Test Condit ions 3.5 0.2 V IN=5V; Tj=25°C IIN=10mA IIN=-10mA 5 0.9 30 6 -0.7 V 3/11 1 VND05B / VND05B (011Y) / VND05B (012Y) ELECTRICAL CHARACTERISTICS (continued) PROTECTIONS AND DIAGNOSTICS Symbol V STAT VUSD V SCL T TSD TTSD(hyst) TR VOL IOL tpovl tpol Parameter Test Conditions Low output voltage status ISTAT=1.6mA Undervoltage shut-down Status clamp voltage ISTAT= 10mA Min Typ 3.5 5 4.5 6 ISTAT= -10mA Thermal shut-down temperature Thermal shutdown hysteresis temperature Reset temperature Open voltage level Open load current level Overtemperature Status delay Open Load Status delay -0.7 140 Off state (note 2) On state 125 2.5 5 (note 3) (note 3) Max 0.4 6 7 50 Unit V V V V 180 °C 50 °C 4 5 180 °C V mA 5 10 µs 500 2500 µs 160 (*) In =Nominal current according to ISO definition for high side automotive switch (see note 1) (^) See switching time waveform (•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. Note 1: The Nominal Current is the current at Tc =85°C for battery voltage of 13V which produces a voltage drop of 0.5V Note 2: IOL(off) = (VCC-VOL)/ROL Note 3: tpovl tpol: ISO definition Note 2 Relevant Figure 4/11 2 Note 3 Relevant Figure VND05B / VND05B (011Y) / VND05B (012Y) Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a common diagnostic output for both channels which indicates open load in onstate, open load in off-state, overtemperature conditions and stuck-on to VCC . From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open load (t pol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short-circuit and overcurrent condition, the thermal protection turns the integrated PowerMOS off at a minimum junction temperature of 140°C. When this temperature returns to 125°C the switch is automatically turned in again. In short-circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two PowerMOS areas. This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem= 0.5•Lload•(Iload)2•[(VCC+Vdemag)/Vdemag]•f where f= switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shutdown temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, both channels will switch off. PROTECTING THE REVERSE BATTERY DEVICE AGAINST The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 2 (GND) and ground, as shown in the typical application circuit (fig. 2). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and VSTAT are increased by Vf with respect to power GND). - The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to the device ground (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift on Vil, Vih and VSTAT. This solution allows the use of a standard diode. 5/11 VND05B / VND05B (011Y) / VND05B (012Y) THRUTH TABLE Normal operation Undervoltage Thermal shutdown Channel 1 Channel 2 Channel 1 Openload Channel 2 Channel 1 Output shorted to VCC Channel 2 Figure: 1: Waveforms 6/11 1 INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC L H L H X H X H L X L H L X L L H H L X X H X L H L X L H L L H L H L L X H L X L H H X L L H H L L X L X L H L X L H H H H H H H L L L L L L L L L L VND05B / VND05B (011Y) / VND05B (012Y) Figure 2: Typical application circuit with a Schottky diode for reverse supply protection Figure 3: Typical application circuit with separate signal ground 7/11 2 VND05B / VND05B (011Y) / VND05B (012Y) HEPTAWATT (horizontal) MECHANICAL DATA DIM. mm. MIN. TYP A TYP. MAX. 0.189 1.37 0.054 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.6 0.8 0.024 0.031 0.9 0.035 G 2.41 2.54 2.67 G1 4.91 5.08 5.21 0.193 0.200 0.205 G2 7.49 7.62 7.8 0.295 0.300 0.307 H2 H3 0.095 0.100 10.4 10.05 10.4 0.105 0.409 0.396 0.409 L 14.2 0.559 L1 4.4 0.173 L2 15.8 0.622 L3 5.1 0.201 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 3.85 0.144 L9 Dia 1 MIN. 2.4 F1 8/11 MAX. 4.8 C D inch 4.44 3.65 0.175 0.152 VND05B / VND05B (011Y) / VND05B (012Y) HEPTAWATT (vertical) MECHANICAL DATA DIM. mm. MIN. TYP A MAX. MIN. TYP. 4.8 C D inch MAX. 0.189 1.37 0.054 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.6 0.8 0.024 0.031 F1 0.9 0.035 G 2.41 2.54 2.67 G1 4.91 5.08 5.21 0.193 0.200 0.205 G2 7.49 7.62 7.8 0.295 0.300 0.307 H2 H3 0.095 0.100 10.4 10.05 10.4 0.105 0.409 0.396 0.409 L 16.97 0.668 L1 14.92 0.587 L2 21.54 0.848 L3 22.62 0.891 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 2.8 0.110 M1 5.08 0.200 9/11 1 1 VND05B / VND05B (011Y) / VND05B (012Y) HEPTAWATT (in-line) MECHANICAL DATA DIM. mm. MIN. TYP A MIN. TYP. MAX. 0.189 1.37 0.054 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.6 0.8 0.024 0.031 D F1 0.9 0.035 G 2.41 2.54 2.67 G1 4.91 5.08 5.21 0.193 0.200 0.205 G2 7.49 7.62 7.8 0.295 0.300 0.307 H2 1 MAX. 4.8 C 10/11 inch 0.095 10.4 0.100 0.105 0.409 H3 10.05 10.4 0.396 0.409 L2 22.4 22.9 0.882 0.902 L3 25.4 26 1.000 1.024 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia. 3.65 3.85 0.144 0.152 VND05B / VND05B (011Y) / VND05B (012Y) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . http://ww w.st.com 11/11 1