PHOTODIODE 100 mm2 AXUV100Al FEATURES • Square active area • 150 nm aluminum filter across top surface • Detection range 17-80 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh TEST CONDITIONS MIN 10 mm x 10 mm TYP UNITS mm2 100 (see graph on next page) @ ± 10 mV 20 MOhms Reverse Breakdown Voltage, VR IR = 1 µA 10 Capacitance, C VR = 0 V 10 RL = 50 Ω, VR = V 250 Response Time, tr MAX Volts 44 nF nsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 100 mm2 RESPONSIVITY (A/W) 0.30 AXUV100Al RESPONSIVITY (A/W) 0.25 0.20 0.15 0.101 0.05 0.00 0 20 40 60 80 90 120 140 WAVELENGTH(nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013