UV/EUV CONTINUOUS POSITION SENSOR SXUV-DLPSD FEATURES • Submicron position resolution • Stable response after exposure to UV/EUV • 5 mm x 5 mm active area • TO-8 windowless package RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS MIN Active Area A/W 0.2 Responsivity, R @ 254 nm 0.02 Dark Current ldr VR = 30 V 10 Capacitance, C Rise Time Shunt Resistance Inter Electrode Resistance Vr = ± 10 mV A/W 50 50 VR = 30 V VR = 30 V, RL = 50 nA Volts 40 60 200 pF nsec 5 5,000 UNITS mm2 @ 13 nm IR = 1 µA MAX 25 Responsivity, R Reverse Breakdown Voltage, V R 1 TYP MOhms 10,000 Temp Coefficient of ID 1.15 Position Non-Linearity1 1 15,000 Ohms Times/°C 2 ±% Valid within 80% of length THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE 1 Ambient –10°C to 40°C Nitrogen or Vacuum –20°C to 80°C Maximum Junction Temperature 70°C Lead Soldering Temperature1 260°C 0.08" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision July 30, 2014 UV/EUV CONTINUOUS POSITION SENSOR SXUV-DLPSD PHOTON RESPONSIVITY 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 Wavelength (nm) 100 1000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision July 30, 2014