SUPER HIGH-POWER GaAlAs IR EMITTERS OD-250 FEATURES • Ultra high optical output • Four wire bonds on die corners • Very uniform optical beam • Standard 3-lead TO-39 hermetic package • Chip size: 0.026 x 0.026 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two Anode pins must be externally connected together. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS MIN TYP Total Power Output, Po IF = 500mA 160 250 mW 850 nm Spectral Bandwidth at 50%, Δλ IF = 50mA IF = 50mA 40 nm IF = 50mA 110 Deg Peak Emission Wavelength, λP Half Intensity Beam Angle, θ IF = 500mA Forward Voltage, VF Reverse Breakdown Voltage, VR IR = 10μA Rise Time 1.7 5 30 IFP = 50mA IFP = 50mA Fall Time MAX 2 UNITS Volts Volts 20 nsec 20 nsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Continuous Forward Current Peak Forward Current (10μs, 200Hz) 1000mW 500mA 2 1.5A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 1 260°C Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA 1 Thermal Resistance, RTHJA2 -40°C to 100°C 100°C 145°C/W Typical 75°C/W Typical 1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2 Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS 1000 OD-250 THERMAL DERATING CURVE POWER DISSIPATION (mW) MAXIMUM RATINGS 900 800 700 INFINITE HEAT SINK 600 500 400 NO HEAT SINK 300 200 100 RELATIVE POWER OUTPUT (%) 1.0 25 50 75 AMBIENT TEMPERATURE (°C) RADIATION PATTERN DEGRADATION CURVE 100 IF = 150mA Tj = 63°C 0.9 IF = 250mA Tj = 89°C 0.8 IF = 450mA Tj = 90°C 0.7 450 mA -3 Dev TCASE = 25°C NO PRE BURN-IN PERFORMED 0.6 0.5 100 RELATIVE POWER OUTPUT (%) 0 1 10 100 STRESS TIME, (hrs) 1,000 80 60 40 20 0 –100 –80 10,000 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE SPECTRAL OUTPUT 1.5 100 RELATIVE POWER OUTPUT RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS 1.4 80 60 40 20 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 750 POWER OUTPUT, Po (mW) 100 800 850 WAVELENGTH, λ(nm) 900 950 0.5 –50 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 10 DC 1 10 100 FORWARD CURRENT, IF (mA) 1,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013