HIGH-POWER GaAlAs IR EMITTERS GLASS DOME .183 .186 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Narrow angle for long distance applications ANODE (CASE) .209 .220 .015 .152 .154 .100 .041 20 .017 .030 .040 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. 13 1.00 MIN. OD-880F .036 CATHODE 45° .197 .205 PARAMETERS MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS Total Power Output, Po IF = 100mA Peak Emission Wavelength, λP TYP 15 17 mW 120 135 mW/sr 880 nm IF = 50mA DE Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ MIN CE Radiant Intensity, Ie R RoHS IF = 100mA Forward Voltage, VF Reverse Breakdown Voltage, VR IR = 10μA FE Rise Time LI Fall Time nm 8 Deg 30 VR = 0V Capacitance, C UNITS 80 1.55 5 MAX 1.9 Volts Volts 17 pF 0.5 µsec 0.5 µsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 190mW Continuous Forward Current OF 100mA Peak Forward Current (10μs, 400Hz)2 3A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, RTHJA1 350°C/W Typical Thermal Resistance, RTHJA2 115°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH-POWER GaAlAs IR EMITTERS THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 50 75 AMBIENT TEMPERATURE (°C) t = 500μs 100 Ip T IF = 50mA 80 70 TCASE = 25°C NO PRE BURN-IN PERFORMED RELATIVE POWER OUTPUT FE 2 1 100 40 20 0 –25 –20 105 DE 104 LI FORWARD CURRENT, IF (amps) 3 10 60 FORWARD I-V CHARACTERISTICS 4 1 DUTY CYCLE, D (%) 80 CE IF = 100mA 50 103 STRESS TIME, (hrs) t T RADIATION PATTERN 90 102 0.1 100 IF = 20mA 101 D= t 0.1 DEGRADATION CURVE 60 t = 100μs 1 MB ER 100 25 t = 10μs 0.01 0.01 RELATIVE POWER OUTPUT (%) 0 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 MAXIMUM PEAK PULSE CURRENT 20 13 200 OD-880F –15 –10 –5 0 5 10 BEAM ANGLE, θ(deg) 15 20 25 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 SPECTRAL OUTPUT 75 100 POWER OUTPUT vs FORWARD CURRENT D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) 1,000 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013