HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. .183 .186 .015 .152 .154 • Extended operating temperature range • No internal coatings .209 .220 • No derating or heat sink required to 80°C .100 .041 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. 13 ANODE (CASE) GLASS DOME OD-880FHT .030 .040 20 .017 .036 CATHODE 45° .197 .205 PARAMETERS Total Power Output, Po MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS IF = 100mA Peak Emission Wavelength, λP R RoHS MIN 6 MAX CE 880 IF = 50mA Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ IF = 100mA Reverse Breakdown Voltage, VR Capacitance, C IR = 10μA DE Forward Voltage, VF 5 E LI F UNITS mW nm 80 nm 8 Deg 1.55 30 VR = 0V Rise Time Fall Time TYP 8 1.9 Volts Volts 17 pF 0.5 μsec 0.5 μsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 190mW Continuous Forward Current 100mA 3A Reverse Voltage 5V OF Peak Forward Current (10μs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -65°C TO 150°C Maximum Junction Temperature 150°C Thermal Resistance, RTHJA1 370°C/W Typical Thermal Resistance, RTHJA2 120°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH TEMPERATURE GaAlAs IR EMITTERS 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 50 75 100 125 AMBIENT TEMPERATURE (°C) t = 500μs 150 T IF = 50mA 80 70 TCASE = 25°C NO PRE BURN-IN PERFORMED RELATIVE POWER OUTPUT FE 2 1 100 40 20 0 –25 105 DE 104 LI FORWARD CURRENT, IF (amps) 3 10 60 –20 –15 –10 –5 0 5 10 BEAM ANGLE, θ(deg) 15 20 25 POWER OUTPUT vs TEMPERATURE FORWARD I-V CHARACTERISTICS 4 1 DUTY CYCLE, D (%) 80 CE IF = 100mA 50 103 STRESS TIME, (hrs) 0.1 RADIATION PATTERN 90 102 t T Ip 100 IF = 20mA 101 D= t 0.1 DEGRADATION CURVE 60 t = 100μs 1 MB ER 100 25 t = 10μs 0.01 0.01 RELATIVE POWER OUTPUT (%) 0 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 MAXIMUM PEAK PULSE CURRENT 13 THERMAL DERATING CURVE 20 200 OD-880FHT 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 75 100 1,000 D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) POWER OUTPUT vs FORWARD CURRENT SPECTRAL OUTPUT 100 EN –25 60 40 100 10 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 DC PULSE 10μs, 100Hz 20 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013