OPTODIODE OD-850F

HIGH-POWER GaAlAs IR EMITTERS
OD-850F
FEATURES
• High optical output
• 850nm peak emission
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
MIN
TYP
Total Power Output, Po
PARAMETERS
IF = 100mA
22
30
mW
850
nm
Spectral Bandwidth at 50%, Δλ
IF = 20mA
IF = 20mA
40
nm
8
Deg
Forward Voltage, VF
IF = 20mA
IF = 100mA
1.6
Rise Time
IFP = 50mA
Peak Emission Wavelength, λP
Half Intensity Beam Angle, θ
Reverse Breakdown Voltage, VR
IR = 10μA
5
30
IFP = 50mA
Fall Time
MAX
2
UNITS
Volts
Volts
20
nsec
20
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
200mW
Continuous Forward Current
100mA
Peak Forward Current (10μs, 200Hz)1
300mA
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
1
260°C
Derate linearly above 25°C.
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, RTHJA
1
Thermal Resistance, RTHJA2
1
-40°C to 100°C
100°C
400°C/W Typical
135°C/W Typical
Heat transfer minimized by measuring in still air with minimum heat conducting through leads.
2Air
circulating at a rapid rate to keep case temperature at 25°C.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
HIGH-POWER GaAlAs IR EMITTERS
200
OD-850F
THERMAL DERATING CURVE
POWER DISSIPATION (mW)
INFINITE
HEAT SINK
160
140
NO
HEAT SINK
120
100
80
60
40
20
100
25
50
75
AMBIENT TEMPERATURE (°C)
100
DEGRADATION CURVE
RADIATION PATTERN
100
IF = 20mA
IF = 50mA
IF = 100mA
90
RELATIVE POWER OUTPUT (%)
0
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
180
IF = 100mA
(-3σ)
80
70
TCASE = 25°C
NO PRE BURN-IN PERFORMED
60
102
103
STRESS TIME, (hrs)
104
60
40
20
0
–25 –20
50
101
80
105
–15
–10
–5
0
5
10
BEAM ANGLE, θ(deg)
15
20
25
POWER OUTPUT vs TEMPERATURE
SPECTRAL OUTPUT
1.5
100
RELATIVE POWER OUTPUT
RELATIVE POWER OUTPUT (%)
1.4
80
60
40
20
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
750
POWER OUTPUT, Po (mW)
100
800
850
WAVELENGTH, λ(nm)
900
950
0.5
–50
–25
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
10
DC
1
10
100
FORWARD CURRENT, IF (mA)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013