PHOTODIODE 20 mm2 UVG20C FEATURES • • • • Circular active area Ideal for electron detection 100% internal QE TO-8 package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area TEST CONDITIONS 1 Responsivity, R MIN Ø 4.9 mm TYP MAX UNITS mm2 19 A/W (see graph on next page) Reverse Breakdown Voltage, VR IR = 1 µA 9 Capacitance, C VR = 0 V 4 10 nF 3.3 usec Rise Time RL = 50 Ω, VR = 0 V 0.8 1.7 Vf = ± 10 mV 50 200 Shunt Resistance Volts MOhms 1 Die active area = Ø 5.5 mm, aperture size = Ø 4.9 mm THERMAL PARAMETERS Storage Temperature Range Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature2 -20° TO 100°C -20°C TO 80°C 100°C 240°C 2 1/16" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision April 18, 2013 PHOTODIODE 20 mm2 Responsivity (A/W) 0.6 UVG20C RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision April 18, 2013