OSRAM OSTAR - Lighting IR 6-fold with Optics (850nm) Lead (Pb) Free Product - RoHS Compliant SFH 4750 Wesentliche Merkmale Features • • • • • • • • • • • • 3.5 W optische Leistung bei IF=1A Aktive Chipfläche 2.1 x 3.2 mm2 max. Gleichstrom 1 A niedriger Wärmewiderstand (3 K/W) Emissionswellenlänge 850 nm ESD-sicher bis 2 kV nach JESD22-A114-B 3.5 W optical power at IF=1A Active chip area 2.1 x 3.2 mm2 max. DC-current 1 A Low thermal resistance (3 K/W) Spectral emission at 850 nm ESD safe up to 2 kV acc. to JESD22-A114-B Anwendungen Applications • • • • • • • • • • • • Infrarotbeleuchtung für Kameras Überwachungssysteme IR-Datenübertragung Verkehrsüberwachungssysteme Beleuchtung für Bilderkennungssysteme Nicht für Anwendungen im Automobilbereich Infrared Illumination for cameras Surveillance systems IR Data Transmission Intelligent Transportation Systems Machine vision systems Not released for automotive applications Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstärke1) (IF = 1A, tp = 20 ms) Radiant intensity1) Ιe (mW/sr) SFH 4750 Q65110A8280 > 630 (typ. 1000) 1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr. 2010-12-15 1 SFH 4750 Grenzwerte TB1) = 25 °C Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range TB, op , TB, stg – 40 … + 100 °C Sperrschichttemperatur Junction temperature TJ + 145 °C Sperrspannung Reverse voltage VR 0.5 V Vorwärtsgleichstrom Forward current IF 1 A Stoßstrom, tp = 100 µs, D = 0 Surge current IFSM 5 A Leistungsaufnahme, Power consumption Ptot 12 W Thermische Verlustleistung Thermal power-dissipation Pth 9.8 W Wärmewiderstand Sperrschicht / Bodenplatte Thermal resistance Junction / Base plate RthJB 3 K/W 1) TB = Temperatur auf der Rückseite der Metallkernplatine / Temperature at the backside of the base plate. Kennwerte (TB = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 1 A, tp = 10 ms λpeak 860 nm Schwerpunkts-Wellenlänge der Strahlung Centroid wavelength IF = 1 A, tp = 10 ms λcentroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 1 A, tp = 10 ms Δλ 30 nm Abstrahlwinkel Half angle ϕ ± 70 Grad deg. 2010-12-15 2 SFH 4750 Kennwerte (TB = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Abmessungen der aktiven Chipfläche1) Dimension of the active chip area L×B L×W 2.1 × 3.2 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, IF = 5 A, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 5 A, RL = 50 Ω tr , tf 10, 10 ns Durchlassspannung Forward voltage IF = 1 A, tp = 100 µs VF 9.5 (< 12) V Gesamtstrahlungsfluss Total radiant flux IF = 1 A, tp = 100 μs Φe 3.5 W Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie or Φe IF = 1 A, tp = 10 ms TCI – 0.3 %/K Temperaturkoeffizient von VF Temperature coefficient of VF IF = 1 A, tp = 10 ms TCV –6 mV/K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 1 A, tp = 10 ms TCλ,centroid + 0.3 nm/K 1) Die aktive Chipfläche besteht aus 6 einzelnen Chips mit je 1 x 1 mm². The active chip area consists of 6 single chips with 1 x 1 mm² each. 2010-12-15 3 SFH 4750 Strahlstärke1) Ιe Radiant Intensity1) Ιe Bezeichnung Parameter Symbol Werte Values SFH 4750 -EA Ιe min Ιe max Strahlstärke Radiant Intensity IF = 1 A, tp = 20 ms 1) Einheit Unit SFH 4750 -EB 630 1000 800 1250 mW/sr mW/sr Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) Only one group in one packing unit (variation lower 1.6:1) Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) 40˚ 30˚ 20˚ 10˚ ϕ 0˚ OHF04180 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 2010-12-15 0.8 0.6 0.4 0˚ 20˚ 4 40˚ 60˚ 80˚ 100˚ 120˚ SFH 4750 Relative spektrale Emission Relative Spectral Emission Irel = f (λ), TB = 25 °C OHF04132 100 I rel Durchlassstrom Forward Current IF = f (VF), TB = 25 °C, Single pulse, tp = 100 μs % IF Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux Φe/Φe(1A) = f (IF), TB = 25 °C, Single pulse, tp = 100 μs OHF04166 101 A OHF03848 101 Φe Φe (1 A) 80 100 10 60 0 5 5 10-1 5 40 10 10-2 5 20 0 700 -1 5 10-2 750 800 850 nm 950 5 7 9 11 13 Max. zulässiger Durchlassstrom Max. Permissible Forward Current IF = f (TB), RthJB = 3 K/W IF Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability IF = f (tp), TB = 85 °C, Duty cycle D = parameter OHF04168 IF 1.0 OHF04167 5.5 A t D = TP 4.5 4.0 0.8 2.5 2.0 0.4 IF T 0.005 0.01 0.02 0.05 0.1 0.2 0.33 0.5 1 3.0 0.6 tP D= 3.5 1.5 1.0 0.2 0.5 0 0 20 40 60 80 ˚C 120 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp TB 2010-12-15 5 5 10 -1 5 10 0 A 10 1 IF VF λ 1.2 A 10-3 -2 10 V 15 SFH 4750 Anschlusskontaktierung Contacting Drahttyp Wire type Durchmesser Lötspitze Diameter Solder Tip Temperatur Lötzeit Temperature Solder Time AWG 18 ~0.8 mm (Litze; flexible wire) 3.2 mm (Meisel; Chisel) 250 °C 350 °C 16 sec. 6 sec AWG 20 ~0.5 mm (Litze; flexible wire) 3.2 mm (Meisel; Chisel) 250 °C 350 °C 14 sec. 5 sec AWG 22 ~0.3 mm (Litze; flexible wire) 3.2 mm (Meisel; Chisel) 250 °C 350 °C 9 sec. 3 sec 2010-12-15 6 SFH 4750 Maßzeichnung und Ersatzschaltbild Package Outlines and equivalent circuit diagram Maße in mm (inch) / Dimensions in mm (inch). Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2010-12-15 7 Mouser Electronics Related Product Links 720-SFH4750 - Osram Opto Semiconductor SFH 4750